Abstract: High-Energy Fine Structure in the Auger Spectra of Silicon and Silicon Carbide

1973 ◽  
Vol 10 (1) ◽  
pp. 276-276 ◽  
Author(s):  
J. E. Rowe ◽  
S. B. Christman
Keyword(s):  
Silicon Carbide ◽  
Fine Structure ◽  
High Energy ◽  
Auger Spectra

Damage in High Energy Light Ions Irradiated Silicon Carbide

1998 ◽  
Vol 510 ◽  
Author(s):  
P. Leveque ◽  
S. Godey ◽  
P.O. Renault ◽  
E. Ntsoenzok ◽  
J.F. Barbot
Keyword(s):  
Silicon Carbide ◽  
Surface Layer ◽  
Energy Transfer ◽  
High Energy ◽  
Alpha Particles ◽  
Defect Production ◽  
Majority Carrier ◽  
Reflectivity Spectra ◽  
Light Ions ◽  
Compensation Layer

AbstractCommercial n-type 4H-SiC wafers were implanted with doses of MeV alpha particles, high enough to cause majority carrier modification. Analysis of infrared reflectivity spectra shows that the implanted crystals can be divided into three layers: a surface layer of about 30 nm followed by a compensation layer where the energy transfer of the incident particles is low and an overdoping layer in the region of maximum defect production, i.e. near the theoretical mean range of ions Rp

Analysis of Reflection High Energy Electron Diffraction Pattern of Silicon Carbide Grown on Silicon

1995 ◽  
Vol 399 ◽  
Author(s):  
G. Teichert ◽  
J. Pezoldt ◽  
V. Cimalla ◽  
O. Nennewitz ◽  
L. Spiess
Keyword(s):  
Silicon Carbide ◽  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Process Parameters ◽  
Electron Diffraction Pattern ◽  
Lattice Relaxation ◽  
High Energy ◽  
Morphology Evolution ◽  
Rheed Pattern ◽  
High Energy Electron

ABSTRACTRHEED pattern of SiC layers on both (100) and (111)Si grown by carbonization were studied. Different deviations from the single crystalline structure were found ranging from twinning up to changes in the orientation and textured growth. Special attention was drawn on lattice relaxation and morphology evolution during the growth of the formed SiC. Relationships between the occurrence of typical RHEED pattern and the morphology and process parameters are presented.

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