Josephson Tunneling Barriers by rf Sputter Etching in an Oxygen Plasma

1972 ◽  
Vol 9 (1) ◽  
pp. 333-333
Author(s):  
J. H. Greiner
Keyword(s):  
Oxygen Plasma ◽  
Josephson Tunneling ◽  
Sputter Etching

Etching of Polymers by Oxygen Plasma

1968 ◽  
Vol 26 ◽  
pp. 408-409
Author(s):  
Virgil Peck ◽  
W. L. Carter
Keyword(s):  
Molecular Weight ◽  
Oxygen Plasma ◽  
Flow Time ◽  
Microscopical Study ◽  
Surface Layers ◽  
Organic Vapors ◽  
Sample Position ◽  
Accuracy Of Measurement ◽  
Bulk Polymers ◽  
Electron Microscopical

Any electron microscopical study of the morphology of bulk polymers has throughout the years been hampered by the lack of any real ability to produce meaningful surface variations for replication. True etching of polymers should show crystalline and amorphous regions in some form of relief. The use of solvents, acids, organic vapors, and inert ion bombardment to etch samples has proved to be useful only in limited applications. Certainly many interpretations of these results are subject to question.The recent use of a radiofrequency (R. F.) plasma of oxygen to degrade and remove organic material with only minor heating has opened a new possibility for etching polymers. However, rigid control of oxygen flow, time, current, and sample position are necessary in order to obtain reproducible results. The action is confined to surface layers; the molecular weight of the polymer residue after heavy etching is the same as the molecular weight of the polymer before attack, within the accuracy of measurement.

Activation of EL-4 T-cells by irradiation with atmospheric oxygen plasma

2020 ◽  
Vol 59 (SJ) ◽  
pp. SJJF03
Author(s):  
Sitti Subaedah ◽  
Haruka Uematsu ◽  
Nobuya Hayashi
Keyword(s):  
T Cells ◽  
Oxygen Plasma ◽  
Atmospheric Oxygen

Diagnostics of hydrogen-oxygen plasma jet for application in gas thermal spraying

2020 ◽  
Vol 2020 (11) ◽  
pp. 41-45
Author(s):  
Yu.S. Popil ◽  
◽  
V.M. Korzh ◽  
V.Ya. Chernyak ◽  
Ye.A. Zakharov ◽  
...  
Keyword(s):  
Oxygen Plasma ◽  
Thermal Spraying ◽  
Plasma Jet

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

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