Thin Film GaAs Photocathodes Deposited on Single Crystal Sapphire by a Modified rf Sputtering Technique

1971 ◽  
Vol 8 (1) ◽  
pp. 228-232 ◽  
Author(s):  
S. B. Hyder
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Rf Sputtering ◽  
Single Crystal Sapphire

Ion Thinning of Electron Transparent Single Crystal Sapphire Substrates

1974 ◽  
Vol 32 ◽  
pp. 468-469
Author(s):  
J. L. Kenty ◽  
R. E. Johnson
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Sapphire Substrates ◽  
Single Crystal Sapphire ◽  
Growth Experiments

Samples of single crystal sapphire (α-Al2O3) have been ion-beam thinned to yield electron transparent regions suitable for use as substrates for in situ thin film growth experiments. Routine fabrication of 1 mm dia. samples containing one or more thin (∼200Å) regions ∼10μm2 in area was possible. The samples were surprisingly robust, many surviving post-thinning subdivision, mounting into a TEM environment cell, and heating to ∼1200°C.

scholarly journals Synthesis of a mesoporous titania thin film with a pseudo-single-crystal framework by liquid-phase epitaxial growth, and enhancement of photocatalytic activity

RSC Advances ◽  
2020 ◽  
Vol 10 (67) ◽  
pp. 40658-40662
Author(s):  
Norihiro Suzuki ◽  
Chiaki Terashima ◽  
Kazuya Nakata ◽  
Ken-ichi Katsumata ◽  
Akira Fujishima
Keyword(s):  
Thin Film ◽  
Photocatalytic Activity ◽  
Liquid Phase ◽  
Single Crystal ◽  
Chemical Process ◽  
Anatase Phase ◽  
Mesoporous Titania ◽  
Titania Thin Film ◽  
Liquid Phase Epitaxial Growth ◽  
Pseudo Single Crystal

An anatase-phase mesoporous titania thin film with a pseudo-single-crystal framework was facilely synthesized by an inexpensive chemical process.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth
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