Numerical Solutions of a Field Effect Model for Indium Antimonide

R. H. Hartley

doi:10.1116/1.1315687

Numerical Solutions of a Field Effect Model for Indium Antimonide

Journal of Vacuum Science and Technology ◽

10.1116/1.1315687 ◽

1969 ◽

Vol 6 (4) ◽

pp. 575-575

Author(s):

R. H. Hartley

Keyword(s):

Indium Antimonide ◽

Field Effect ◽

Numerical Solutions ◽

Effect Model

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On the field effect measurements on indium antimonide surfaces

Surface Science ◽

10.1016/0039-6028(69)90189-7 ◽

1969 ◽

Vol 18 (2) ◽

pp. 452-456 ◽

Cited By ~ 2

Author(s):

H.R. Huff ◽

S. Kawaji ◽

H.C. Gatos

Keyword(s):

Indium Antimonide ◽

Field Effect

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Electric Field Effect on Characteristics of Indium Antimonide MOS Structures

10.1515/9783112480847-029 ◽

1986 ◽

pp. 253-262

Author(s):

V. N. Davydov ◽

A. S. Petrov

Keyword(s):

Electric Field ◽

Indium Antimonide ◽

Field Effect ◽

Electric Field Effect ◽

Mos Structures

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Field-effect studies on indium antimonide films

Radio and Electronic Engineer ◽

10.1049/ree.1967.0035 ◽

1967 ◽

Vol 33 (4) ◽

pp. 223 ◽

Cited By ~ 6

Author(s):

C. Juhasz ◽

J.C. Anderson

Keyword(s):

Indium Antimonide ◽

Field Effect

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Electric Field Effect on Characteristics of Indium Antimonide MOS Structures

phys stat sol (a) ◽

10.1002/pssa.2210980129 ◽

1986 ◽

Vol 98 (1) ◽

pp. 253-261 ◽

Cited By ~ 3

Author(s):

V. N. Davydov ◽

A. S. Petrov

Keyword(s):

Electric Field ◽

Indium Antimonide ◽

Field Effect ◽

Electric Field Effect ◽

Mos Structures

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Optimized Novel Indium Antimonide Quantum Well Field Effect Transistor for High-Speed and Low Power Logic Applications

ECS Meeting Abstracts ◽

10.1149/ma2015-02/18/812 ◽

2015 ◽

Keyword(s):

Quantum Well ◽

Low Power ◽

Indium Antimonide ◽

Field Effect ◽

High Speed ◽

Field Effect Transistor ◽

Well Field ◽

Effect Transistor ◽

Low Power Logic

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Transmission of polar effects: prediction by the Kirkwood–Westheimer electrostatic field effect model

Journal of the Chemical Society Chemical Communications ◽

10.1039/c39770000608 ◽

1977 ◽

pp. 608-609 ◽

Cited By ~ 3

Author(s):

Socrates Acevedo ◽

Keith Bowden

Keyword(s):

Electrostatic Field ◽

Field Effect ◽

Effect Model

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Field effect measurements on the A and B {111} surfaces of indium antimonide

Surface Science ◽

10.1016/0039-6028(66)90038-0 ◽

1966 ◽

Vol 5 (4) ◽

pp. 399-409 ◽

Cited By ~ 27

Author(s):

Howard Huff ◽

Shinji Kawaji ◽

Harry C. Gatos

Keyword(s):

Indium Antimonide ◽

Field Effect

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The Charge Transport in Organic Field-Effect Transistor as an Interface Charge Propagation: The Maxwell–Wagner Effect Model and Transmission Line Approximation

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.071603 ◽

2010 ◽

Vol 49 (7) ◽

pp. 071603 ◽

Cited By ~ 36

Author(s):

Martin Weis ◽

Jack Lin ◽

Dai Taguchi ◽

Takaaki Manaka ◽

Mitsumasa Iwamoto

Keyword(s):

Transmission Line ◽

Charge Transport ◽

Field Effect ◽

Field Effect Transistor ◽

Organic Field Effect Transistor ◽

Interface Charge ◽

Effect Model ◽

Effect Transistor ◽

Charge Propagation

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1/f noise measurements on indium antimonide metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.370630 ◽

1999 ◽

Vol 85 (12) ◽

pp. 8485-8489 ◽

Cited By ~ 3

Author(s):

U. H. Liaw ◽

Y. K. Su

Keyword(s):

Metal Oxide ◽

Indium Antimonide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Noise Measurements

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Retraction: 1/f noise measurements on indium antimonide metal-oxide-semiconductor field-effect transistors [J. Appl. Phys. 85, 8485 (1999)]

Journal of Applied Physics ◽

10.1063/1.3582040 ◽

2011 ◽

Vol 109 (10) ◽

pp. 109905

Keyword(s):

Metal Oxide ◽

Indium Antimonide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Noise Measurements

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