Field-effect studies on indium antimonide films

1967 ◽  
Vol 33 (4) ◽  
pp. 223 ◽  
Author(s):  
C. Juhasz ◽  
J.C. Anderson
Keyword(s):  
Indium Antimonide ◽  
Field Effect

On the field effect measurements on indium antimonide surfaces

1969 ◽  
Vol 18 (2) ◽  
pp. 452-456 ◽  
Author(s):  
H.R. Huff ◽  
S. Kawaji ◽  
H.C. Gatos
Keyword(s):  
Indium Antimonide ◽  
Field Effect

Field effect measurements on the A and B {111} surfaces of indium antimonide

1966 ◽  
Vol 5 (4) ◽  
pp. 399-409 ◽  
Author(s):  
Howard Huff ◽  
Shinji Kawaji ◽  
Harry C. Gatos
Keyword(s):  
Indium Antimonide ◽  
Field Effect

Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

2015 ◽  
Vol 14 (03) ◽  
pp. 1450025 ◽  
Author(s):  
Yogesh Goswami ◽  
Pranav Asthana ◽  
Shibir Basak ◽  
Bahniman Ghosh
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Threshold Voltage ◽  
Indium Antimonide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Short Channel ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

Sign in / Sign up

Export Citation Format

Share Document