The role of oxygen in the intrinsic tensile residual stress evolution in sputter-deposited thin metal films

2000 ◽  
Vol 18 (5) ◽  
pp. 2517 ◽  
Author(s):  
A. Misra ◽  
M. Nastasi
Keyword(s):  
Residual Stress ◽  
Metal Films ◽  
Thin Metal ◽  
Tensile Residual Stress ◽  
Thin Metal Films ◽  
Stress Evolution ◽  
Sputter Deposited

Evolution of tensile residual stress in thin metal films during energetic particle deposition

1999 ◽  
Vol 14 (12) ◽  
pp. 4466-4469 ◽  
Author(s):  
A. Misra ◽  
M. Nastasi
Keyword(s):  
Tensile Stress ◽  
Energetic Particle ◽  
Particle Deposition ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Stress Evolution ◽  
Transmission Electron ◽  
Low Energies

Physical-vapor-deposited thin metal films often exhibit tensile residual stresses. We studied the stress evolution in thin Cr films and found that increasing bombardment with energetic particles (atoms or ions) at low energies leads to an increase of tensile stress to a maximum followed by a rapid decrease. Microstructural characterization by transmission electron microscopy revealed that two different microstructures are observed for the same level of tensile stress: films processed at low bombardment had columnar porosity while no porosity was observed in films processed at higher bombardment. The observed stress evolution is interpreted by considering how the mean interatomic distance (and hence the force) in the intercolumnar regions is modified by energetic particle bombardment.

Electrochemical Characterization of Magnetron Sputter-Deposited Nb—Zr Thin Metal Films

CORROSION ◽  
1990 ◽  
Vol 46 (6) ◽  
pp. 499-505 ◽  
Author(s):  
L. Fedrizzi ◽  
Y. Massiani ◽  
J. P. Crousier ◽  
M. Dapor ◽  
P. L. Bonora
Keyword(s):  
Metal Films ◽  
Electrochemical Characterization ◽  
Thin Metal ◽  
Thin Metal Films ◽  
Magnetron Sputter ◽  
Sputter Deposited

Electromigration in Thin Metal Films in the Presence of Two Stress-Relaxation Mechanisms

1996 ◽  
Vol 428 ◽  
Author(s):  
A. Katsman ◽  
L. Levin
Keyword(s):  
Stress Relaxation ◽  
Current Density ◽  
Threshold Stress ◽  
Metal Films ◽  
Thin Metal ◽  
Diffusional Creep ◽  
Thin Metal Films ◽  
Stress Evolution ◽  
Threshold Length ◽  
Kinetics Of

AbstractKinetics of mass transfer in thin metal films during electromigration was analyzed as a function of the generated internal stress. Stress evolution was considered for the case when two different stress relaxation mechanisms can operate simultaneously near the anode end of the strip: thresholdless diffusional creep through a fixed aperture, and diffusional creep with a threshold stress, σt, through the same aperture. Stress distribution and electromigration rate were found as explicit functions of the film length, the aperture size, and the current density. The apparent threshold length was analyzed. It was shown that an apparent threshold product can grow with the current density, in agreement with the experimental results.

1/f noise in thin metal films: The role of steady and mobile defects

1993 ◽  
Author(s):  
V. V. Potemkin ◽  
A. V. Stepanov ◽  
G. P. Zhigal’skii
Keyword(s):  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

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