Epitaxial growth and physical properties of Permalloy film deposited on MgO(001) by biased dc plasma sputtering

2000 ◽  
Vol 18 (5) ◽  
pp. 2339 ◽  
Author(s):  
Masaki Ishino ◽  
Jiping Yang ◽  
Kenji Makihara ◽  
Ji Shi ◽  
Mituru Hashimoto
Keyword(s):  
Physical Properties ◽  
Epitaxial Growth ◽  
Permalloy Film ◽  
Dc Plasma ◽  
Plasma Sputtering

Two-dimensional topological insulators exfoliated from Na3Bi-like Dirac semimetals

2021 ◽  
Author(s):  
Xiaoqiu Guo ◽  
Ruixin Yu ◽  
Jingwen Jiang ◽  
Zhuang Ma ◽  
Xiuwen Zhang
Keyword(s):  
Physical Properties ◽  
Epitaxial Growth ◽  
Topological Insulators ◽  
2D Materials ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Dirac Semimetals

Topological insulation is widely predicted in two-dimensional (2D) materials realized by epitaxial growth or van der Waals (vdW) exfoliation. Such 2D topological insulators (TI’s) host many interesting physical properties such...

scholarly journals Publisher's Note: “Epitaxial growth and physical properties of ternary nitride thin films by polymer-assisted deposition” [Appl. Phys. Lett. 109, 081907 (2016)]

2016 ◽  
Vol 109 (19) ◽  
pp. 199901
Author(s):  
Erik Enriquez ◽  
Yingying Zhang ◽  
Aiping Chen ◽  
Zhenxing Bi ◽  
Yongqiang Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Epitaxial Growth ◽  
Ternary Nitride

Pulsed DC-plasma sputtering induced synthesis of hydrogenated carbon thin films for L-929 cell cultivation

2016 ◽  
Vol 307 ◽  
pp. 1119-1123 ◽  
Author(s):  
Jin Xiang Piao ◽  
Manish Kumar ◽  
Amjed Javid ◽  
Seokyoung Yoon ◽  
Jung Heon Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Cell Cultivation ◽  
Dc Plasma ◽  
Plasma Sputtering ◽  
Pulsed Dc ◽  
Carbon Thin Films

Epitaxial growth and physical properties of 2D materials beyond graphene: from monatomic materials to binary compounds

2018 ◽  
Vol 47 (16) ◽  
pp. 6073-6100 ◽  
Author(s):  
Geng Li ◽  
Yu-Yang Zhang ◽  
Hui Guo ◽  
Li Huang ◽  
Hongliang Lu ◽  
...  
Keyword(s):  
Physical Properties ◽  
Epitaxial Growth ◽  
2D Materials ◽  
Recent Advances ◽  
Binary Compounds

This review highlights the recent advances of epitaxial growth of 2D materials beyond graphene.

Einfluß der Gasadsorption auf die Epitaxie dünner Metallschichten

1968 ◽  
Vol 23 (7) ◽  
pp. 1059-1067 ◽  
Author(s):  
Manfred Harsdorff
Keyword(s):  
Dipole Moment ◽  
Physical Properties ◽  
Partial Pressure ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Adsorbed Layer ◽  
Metal Films ◽  
Special Effects ◽  
Fcc Metals

Special effects of gasadsorption on epitaxy were discussed in previous papers 1. In the present publication the influence of the adsorbed vapours on the epitaxial growth of fcc-metals on alkalihalides has been investigated in more detail. The results of the experiments demonstrate that the orientations of metal films are strongly influenced by the physical properties of the vapours the substrats are cleaved in. The thickness of the adsorbed layer is controlled by the dipole moment and the partial pressure of the vapours and additionnally by the substrat temperature and the deposition rate of the evaporated metal. Since the orientation of the metal films depends itself on the vapour covering of the cleavage planes, the orientation is also determined by these four quantities.

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