Experimental Measurement of Nano-Particle Emissions From Atomic Layer Deposition

2012 ◽  
Author(s):  
Jingwan Huo ◽  
Xiu Lin ◽  
Chris Yuan
Keyword(s):  
Atomic Layer Deposition ◽  
Manufacturing System ◽  
Atomic Layer ◽  
Layer Growth ◽  
Atomic Scale ◽  
Nano Particle ◽  
Scanning Mobility Particle Sizer ◽  
Experimental Conditions ◽  
Particle Emissions ◽  
Layer Deposition

Atomic layer deposition (ALD) is a key enabling nanotechnology for a broad array of applications due to its ability to grow conformal and pinhole-free thin films and control layer growth at atomic scale. Like many nanotechnologies, the potential amount of nano-particle emissions from ALD nano-manufacturing system is a significant concern for both occupational and public health exposure. Here we report our preliminary investigations of nano-particle emissions at end-of-the-pipe of ALD nano-manufacturing system. Scanning Mobility Particle Sizer (SMPS) spectrometer is used for the nano-particle measurement during the ALD process of Al2O3 high-k dielectric gate materials using Trimethyl Aluminum (TMA) and H2O binary reactions. Under various experimental conditions tested in our project, the results demonstrate that the aerosol nanoparticle emissions from ALD nano-manufacturing system are averaged with a mean diameter of 201.28 nm and 940,850 particle concentrations at 200 °C reaction temperature.

scholarly journals Integrated Sustainability Analysis of Atomic Layer Deposition for Microelectronics Manufacturing

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
Chris Y. Yuan ◽  
David A. Dornfeld
Keyword(s):  
Atomic Layer Deposition ◽  
Energy Flow ◽  
Scale Up ◽  
Atomic Layer ◽  
Development Stage ◽  
Layer Growth ◽  
Atomic Scale ◽  
Sustainability Analysis ◽  
Layer Deposition ◽  
Integrated Sustainability

Atomic layer deposition (ALD) is a promising nanotechnology for wide applications in microelectronics manufacturing due to its ability to control layer growth at atomic scale. Sustainability of ALD technology needs to be quantitatively investigated in this early development stage to improve its economic and environmental performance. In this paper, we present an integrated sustainability analysis of ALD technology through material and energy flow analyses. The study is performed on the ALD of Al2O3 high-κ dielectric film through trimethylaluminum and water binary reactions. The precursor utilizations, methane emissions, and nanowaste generations from the ALD process are all quantitatively studied. Energy flow analysis demonstrates that the ALD process energy consumption is mainly determined by the ALD cycle time rather than the process temperature. Scale-up performance of the ALD technology is also studied for both emission generations and energy consumptions. Strategies and methods for improving the sustainability performance of the ALD technology are suggested based on the analysis.

Atomic‐scale designing of zeolite‐based catalysts by atomic layer deposition

ChemPhysChem ◽  
2021 ◽  
Author(s):  
Dan Xu ◽  
Junqing Yin ◽  
Ya Gao ◽  
Di Zhu ◽  
Shuyuan Wang
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Layer Deposition

Atomic Layer Deposition of Ruthenium Films on Hydrogen terminated Silicon

2009 ◽  
Vol 1156 ◽  
Author(s):  
Sun Kyung Park ◽  
K. Roodenko ◽  
Yves J. Chabal ◽  
L. Wielunski ◽  
R. Kanjolia ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Initial Growth ◽  
Experimental Conditions ◽  
Metallic Component ◽  
Broadband Absorption ◽  
Lorentz Oscillator ◽  
Layer Deposition ◽  
Drude Term ◽  
Number Of Cycles

AbstractAtomic Layer deposition of thin Ruthenium films has been studied using a newly synthesized precursor (Cyclopentadienyl ethylruthenium dicarbonyl) and O2 as reactant gases. Under our experimental conditions, the film comprises both Ru and RuO2. The initial growth is dominated by Ru metal. As the number of cycles is increased, RuO2 appears. From infrared broadband absorption measurements, the transition from isolated, nucleated film to a continuous, conducting film (characterized by Drude absorption) can be determined. Optical simulations based on an effective-medium approach are implemented to simulate the in-situ broadband infrared absorption. A Lorentz oscillator model is developed, together with a Drude term for the metallic component, to describe optical properties of Ru/RuO2 growth.

Atomic scale surface engineering of micro- to nano-sized pharmaceutical particles for drug delivery applications

Nanoscale ◽  
2017 ◽  
Vol 9 (32) ◽  
pp. 11410-11417 ◽  
Author(s):  
D. Zhang ◽  
M. J. Quayle ◽  
G. Petersson ◽  
J. R. van Ommen ◽  
S. Folestad
Keyword(s):  
Drug Delivery ◽  
Atomic Layer Deposition ◽  
Surface Engineering ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Ambient Conditions ◽  
Surface Layers ◽  
Layer Deposition ◽  
Atomic Surface ◽  
Scale Surface

Few atomic surface layers via atomic layer deposition under near ambient conditions significantly altered dissolution and dispersion of pharmaceutical particles.

scholarly journals Atomic layer deposition for efficient oxygen evolution reaction at Pt/Ir catalyst layers

2020 ◽  
Vol 11 ◽  
pp. 952-959
Author(s):  
Stefanie Schlicht ◽  
Korcan Percin ◽  
Stefanie Kriescher ◽  
André Hofer ◽  
Claudia Weidlich ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Noble Metal ◽  
Bimetallic Catalyst ◽  
Precursor Solution ◽  
Atomic Layer ◽  
Dip Coating ◽  
Experimental Conditions ◽  
Catalyst Layers ◽  
Layer Deposition ◽  
Improved Stability

We provide a direct comparison of two distinct methods of Ti felt surface treatment and Pt/Ir electrocatalyst deposition for the positive electrode of regenerative fuel cells and vanadium–air redox flow batteries. Each method is well documented in the literature, and this paper provides a direct comparison under identical experimental conditions of electrochemical measurements and in identical units. In the first method, based on classical engineering, the bimetallic catalyst is deposited by dip-coating in a precursor solution of the salts followed by their thermal decomposition. In the alternative method, more academic in nature, atomic layer deposition (ALD) is applied to the felts after anodization. ALD allows for a controlled coating with ultralow noble-metal loadings in narrow pores. In acidic electrolyte, the ALD approach yields improved mass activity (557 A·g−1 as compared to 80 A·g−1 at 0.39 V overpotential) on the basis of the noble-metal loading, as well as improved stability.

scholarly journals Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

2021 ◽  
Author(s):  
Jerome W. F. Innocent ◽  
Mari Napari ◽  
Andrew L. Johnson ◽  
Thom R. Harris-Lee ◽  
Miriam Regue ◽  
...  
Keyword(s):  
Surface Modification ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Layer Deposition ◽  
Scale Surface

Here we report the development of a new scalable and transferable plasma assisted atomic layer deposition (PEALD) process for the production of uniform, conformal and pinhole free NiO with sub-nanometre control on a commercial ALD reactor.

scholarly journals USING OF ATOMIC LAYER DEPOSITION METHOD FOR OBTAINING THIN FILMS BASED ON LiMn2O4 AND LiFePO4

2020 ◽  
Vol 63 (9) ◽  
pp. 77-81
Author(s):  
Oksana Yu. Gants ◽  
Vladimir M. Kashkin ◽  
Angelina D. Yudina ◽  
Valentina O. Zhirnova ◽  
Anna S. Timonina ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Composition ◽  
Atomic Layer Deposition ◽  
Substrate Surface ◽  
Atomic Layer ◽  
Layer Growth ◽  
Process Temperature ◽  
Optimal Time ◽  
Influence Of Process Parameters ◽  
Layer Deposition

An approach to the synthesis of LiFePO4 and LiMn2O4 by atomic layer deposition is proposed and successfully implemented. The main regularities of the process are revealed and the method of synthesis realization is proposed. The following reagents were proposed and used: 2,2,6,6-tetramethylheptan-3,5 - dione of manganese, oxygen, iron (II) chloride, trimethyl phosphate, water and lithium tret-butylate. Nitrogen was used as an inert gas for purging the reactor and as a carrier gas. The influence of process parameters on the synthesis of thin films based on LiFePO4 and LiMn2O4 is described. It has been established that the phase composition of the resulting films is influenced by the time of precursor release and the process temperature. It is concluded that the increase in process temperature has a positive effect on the density of thin films of LiFePO4 and LiMn2O4. The optimum deposition temperature of LiFePO4 and LiMn2O4 is 400 ºC. It was shown that it is possible to regulate the content of each element and phase composition in films based on LiFePO4 and LiMn2O4 by changing the time of precursors release. The optimal time for the release of precursors for the synthesis of LiFePO4 and LiMn2O4 is 4 s under the stated conditions. Of great importance is the time of release of oxidizing agents-4 and 6 s for the deposition of LiFePO4 and LiMn2O4, respectively. The correlation of the layer growth rate per cycle was revealed, which was 0.2 nm/cycle for the synthesis of LiFePO4. The film obtained in the process is X-ray amorphous. To obtain the crystal structure, the films were annealed in argon at a temperature of 800 ºC. The mechanism of interaction of precursors with the substrate surface is studied. The influence of substrate activation on the uniformity of film growth is revealed.

scholarly journals Atomic Layer Deposition of Titanium Oxide on Single-Layer Graphene: An Atomic-Scale Study toward Understanding Nucleation and Growth

2017 ◽  
Vol 29 (5) ◽  
pp. 2232-2238 ◽  
Author(s):  
Yucheng Zhang ◽  
Carlos Guerra-Nuñez ◽  
Ivo Utke ◽  
Johann Michler ◽  
Piyush Agrawal ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Titanium Oxide ◽  
Single Layer ◽  
Atomic Layer ◽  
Nucleation And Growth ◽  
Atomic Scale ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Layer Deposition

Toward Atomic-Scale Patterned Atomic Layer Deposition: Reactions of Al2O3 Precursors on a Si(001) Surface with Mixed Functionalizations

2016 ◽  
Vol 120 (5) ◽  
pp. 2628-2641 ◽  
Author(s):  
R. C. Longo ◽  
J. H. G. Owen ◽  
S. McDonnell ◽  
D. Dick ◽  
J. B. Ballard ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Layer Deposition
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