Study on Fabrication and Characterization of Nanometer Scale MIM Tunneling Junction

Author(s):  
Qinggang Liu ◽  
Qing Chen ◽  
Chaoyan Zhang ◽  
Sen Qi ◽  
Botao He ◽  
...  

In order to illustrate the effect of the TiOx wires’ characters on the tunneling phenomenon in room temperature and to determine the narrowest TiOx wire as well as its forming conditions which cannot lead to the breakdown of the tunneling junction, the fabrication and tunneling mechanism are analyzed. The TiOx wires with different widths are fabricated by changing the ambient humidity and keeping the scanning speed, oxygen concentration and applied voltage at the same value. The I-V characteristics of tunneling junctions with different width are measured. The results indicate that the narrowest TiOx wire with line width about 16nm can be fabricated between two electrodes of the ultra fast photoconductive switch when the voltage between two electrodes is 6V, which cannot leads to the breakdown of the tunneling junction. It is also found that at room temperature, I-V characteristics of tunneling junctions between two electrodes follows exponential dependence evidently.

Sensors ◽  
2018 ◽  
Vol 18 (9) ◽  
pp. 2800 ◽  
Author(s):  
Jheng-Jie Liu ◽  
Wen-Jeng Ho ◽  
Cho-Chun Chiang ◽  
Chi-Jen Teng ◽  
Chia-Chun Yu ◽  
...  

This paper presents a high-speed top-illuminated InP-based avalanche photodetector (APD) fabricated on conductive InP-wafer using planar processes. The proposed device was then evaluated in terms of DC and dynamic performance characteristics. The design is based on a separate absorption, grading, charge, and multiplication (SAGCM) epitaxial-structure. An electric field-profile of the SAGCM layers was derived from the epitaxial structure. The punch-through voltage of the SAGCM APD was controlled to within 16–17 V, whereas the breakdown voltage (VBR) was controlled to within 28–29 V. We obtained dark current of 2.99 nA, capacitance of 0.226 pF, and multiplication gain of 12, when the APD was biased at 0.9 VBR at room temperature. The frequency-response was characterized by comparing the calculated 3-dB cut-off modulation-frequency (f3-dB) and f3-dB values measured under various multiplication gains and modulated incident powers. The time-response of the APD was evaluated by deriving eye-diagrams at 0.9 VBR using pseudorandom non-return to zero codes with a length of 231-1 at 10–12.5 Gbps. There was a notable absence of intersymbol-interference, and the signals remained error-free at data-rates of up to 12.5 Gbps. The correlation between the rise-time and modulated-bandwidth demonstrate the suitability of the proposed SAGCM-APD chip for applications involving an optical-receiver at data-rates of >10 Gbps.


2015 ◽  
Vol 1096 ◽  
pp. 435-440
Author(s):  
Li Rong Yao ◽  
Juan Ren ◽  
Shan Qing Xu

The LiCl/DMAc was used as solvent system to dissolve meta-aramid short fiber, the aramid fibrid was prepared by injecting the aramid solution into the high shearing coagulant at room temperature and the mixture of water and N, N-dimethylacetamide (DMAc) was used as coagulant. The aramid fibrid and aramid short fiber were mixed at differents weight proportion, wet paper was dried and aramid paper was prepared by heat pressing. The aramid paper has excellent mechanical properties when the weight proportion of the aramid fibrid and aramid short fiber was 60:40,and it had a good thermal bonding between the fibrid and fiber under heat pressing. The hydrophobic SiO2 was mixed with aramid fibrid and aramid short fiber (60:40) in ethanol, and aramid/aerogel composite was prepared by drying and hot compressing. The composite had a good heat-resisting, however, the mechanical property decreased with the content of aerogel increasing.


2017 ◽  
Vol 24 (5) ◽  
pp. 1139-1144 ◽  
Author(s):  
Mansour Aouassa ◽  
Imen Jadli ◽  
Mohammad Ali Zrir ◽  
Hassen Maaref ◽  
Ridha Mghaieth ◽  
...  

2008 ◽  
Vol 9 (4) ◽  
pp. 432-438 ◽  
Author(s):  
Hoon-Seok Seo ◽  
Young-Se Jang ◽  
Ying Zhang ◽  
P. Syed Abthagir ◽  
Jong-Ho Choi

2011 ◽  
Vol 211-212 ◽  
pp. 561-564 ◽  
Author(s):  
Kai Tao ◽  
Gui Fu Ding ◽  
Zhuo Qing Yang ◽  
Yan Wang ◽  
Pei Hong Wang

A micromachining technique has been developed for the fabrication of microscale polymer-bonded magnet. Two types of lithographically defined molds, photoresist mold and electroplated metal mold, were introduced. Photoresist mold is convenient, while electroplated metal mold can be fabricated on the glass or steel substrate which can bear much more compression. NdFeB films of thickness between 50 and 500 µm were prepared by micro-patterning of composites containing 83-95wt% of commercial NdFeB powder after curing at the room temperature. Magnetic properties mainly depend on the types and percentage of volume loading of magnetic powder. Coercivity of 772.4kA/m (9.70kOe), remanence of 275.1mT (2.751kG), and energy product of 22.6kJ/m3 (2.8MGOe) have been achieved. This easily developed magnet could be a promising candidate for applications in magnetic microelectromechanical systems (MEMS).


2015 ◽  
Vol 24 (04) ◽  
pp. 1550050 ◽  
Author(s):  
Kieu Loan Phan Thi ◽  
Lam Thanh Nguyen ◽  
Anh Tuan Dao ◽  
Nguyen Huu Ke ◽  
Vu Tuan Hung Le

In this paper, ZnO nanorods were grown by wet chemical method on p-Si (100) substrate to form n-ZnO nanorods/p-Si (100) heterojunction. The optical, electrical, structural properties of n-ZnO nanorods/p-Si(100) heterojunction were analyzed by the photoluminescence (PL) spectroscopy, [Formula: see text]–[Formula: see text] measurement, X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The room temperature PL spectra reveal the good optical property of the heterojunction with strong UV peak at 385[Formula: see text]nm. The ZnO nanorods were vertically well-aligned on p-Si (100) and had an average height of about 1.6[Formula: see text][Formula: see text]m. The n-ZnO nanorods/p-Si (100) heterojunction also exhibits diode-like-rectifying-behavior.


2003 ◽  
Vol 532-535 ◽  
pp. 1017-1024 ◽  
Author(s):  
Maria N. Antipina ◽  
Radmir V. Gainutdinov ◽  
Irina V. Golubeva ◽  
Yury A. Koksharov ◽  
Artem P. Malakho ◽  
...  

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