Characterization of nanometer scale titanium film oxidation lines and MIM tunneling junction structures

2006 ◽  
Author(s):  
Liu Qinggang ◽  
Chen Qing ◽  
Li Suoyin ◽  
He Botao ◽  
Hu Xiaotang
Keyword(s):  
Nanometer Scale ◽  
Tunneling Junction ◽  
Titanium Film

Study on Fabrication and Characterization of Nanometer Scale MIM Tunneling Junction

2007 ◽  
Author(s):  
Qinggang Liu ◽  
Qing Chen ◽  
Chaoyan Zhang ◽  
Sen Qi ◽  
Botao He ◽  
...  
Keyword(s):  
Room Temperature ◽  
Scanning Speed ◽  
Nanometer Scale ◽  
Exponential Dependence ◽  
Tunneling Junction ◽  
Photoconductive Switch ◽  
Tunneling Mechanism ◽  
Fabrication And Characterization ◽  
Tunneling Junctions

In order to illustrate the effect of the TiOx wires’ characters on the tunneling phenomenon in room temperature and to determine the narrowest TiOx wire as well as its forming conditions which cannot lead to the breakdown of the tunneling junction, the fabrication and tunneling mechanism are analyzed. The TiOx wires with different widths are fabricated by changing the ambient humidity and keeping the scanning speed, oxygen concentration and applied voltage at the same value. The I-V characteristics of tunneling junctions with different width are measured. The results indicate that the narrowest TiOx wire with line width about 16nm can be fabricated between two electrodes of the ultra fast photoconductive switch when the voltage between two electrodes is 6V, which cannot leads to the breakdown of the tunneling junction. It is also found that at room temperature, I-V characteristics of tunneling junctions between two electrodes follows exponential dependence evidently.

Time-resolved acousto-optic interaction in single-mode optical fibers: characterization of axial nonuniformities at the nanometer scale

2014 ◽  
Vol 39 (6) ◽  
pp. 1437 ◽  
Author(s):  
E. P. Alcusa-Sáez ◽  
A. Díez ◽  
M. González-Herráez ◽  
M. V. Andrés
Keyword(s):  
Optical Fibers ◽  
Single Mode ◽  
Nanometer Scale ◽  
Time Resolved ◽  
Acousto Optic Interaction

scholarly journals Design and Characterization of a Sharp GaAs/Zn(Mn)Se Heterovalent Interface: A Sub-Nanometer Scale View

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1315
Author(s):  
Davide F. Grossi ◽  
Sebastian Koelling ◽  
Pavel A. Yunin ◽  
Paul M. Koenraad ◽  
Grigory V. Klimko ◽  
...  
Keyword(s):  
Magnetic Semiconductor ◽  
Atom Probe ◽  
Growth Conditions ◽  
Nanometer Scale ◽  
Magnetic Impurities ◽  
Znse Layer ◽  
Secondary Ions ◽  
Annealing Step ◽  
Tunnel Microscopy

The distribution of magnetic impurities (Mn) across a GaAs/Zn(Mn)Se heterovalent interface is investigated combining three experimental techniques: Cross-Section Scanning Tunnel Microscopy (X-STM), Atom Probe Tomography (APT), and Secondary Ions Mass Spectroscopy (SIMS). This unique combination allowed us to probe the Mn distribution with excellent sensitivity and sub-nanometer resolution. Our results show that the diffusion of Mn impurities in GaAs is strongly suppressed; conversely, Mn atoms are subject to a substantial redistribution in the ZnSe layer, which is affected by the growth conditions and the presence of an annealing step. These results show that it is possible to fabricate a sharp interface between a magnetic semiconductor (Zn(Mn)Se) and high quality GaAs, with low dopant concentration and good optical properties.

Mechanical Characterization of Polymers on a Nanometer Scale through Nanoindentation. A Study on Pile-up and Viscoelasticity

2007 ◽  
Vol 40 (4) ◽  
pp. 1259-1267 ◽  
Author(s):  
Davide Tranchida ◽  
Stefano Piccarolo ◽  
Joachim Loos ◽  
Alexander Alexeev
Keyword(s):  
Mechanical Characterization ◽  
Nanometer Scale ◽  
Pile Up
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