Interconnect Fatigue Failure Parameter Isolation for Power Device Reliability Prediction

Author(s):  
Cody J. Marbut ◽  
Mahsa Montazeri ◽  
David Huitink

Flip chip (FC) packaging techniques in modern power electronics have enabled increased power density in module performance, but mechanical stresses induced by thermal expansion during inherent operating conditions in the power devices and packages create a need for understanding thermomechanical fatigue mechanisms that lead to reliability concerns. Moreover, in actual use, these mechanical stresses impact the reliable lifetime alongside thermal factors (such as diffusion and microstructural transformation) and other process history effects. This amalgam of damage inducing phenomena make development of a concise association between damage, fatigue, and stress factors difficult to determine. For reliability demonstration under fatigue loading, accelerated life testing (ALT), such as Thermal Cycling (TC), are commonly used in industry; however, long duration and expensive equipment required for TC limit its utility, especially when considering the high cost of wide-bandgap devices and modules, and the limitation of high temperature (> 150°C) testing standards. As a result, alternative test methodologies are needed to provide faster, cheaper, and design integrable reliability determination. In this work, an accelerated test methodology is introduced and designed to simulate these mechanical stresses at isothermal conditions, which is demonstrated using test chips that are analogous to power devices. By stressing these devices in a controlled environment, mechanical stresses become de-coupled from the design and temperature, such that useful lifetimes can be predictable. Mechanical shear stress was cyclically applied directly to device-relevant, flip-chip solder interconnects while monitoring cycles-to-failure (CTF). Also, Finite Element Analysis (FEA) is used to extract various damage metrics of different solder materials (including PbSn37/63, SAC305 and Nano-silver) in both thermal operation and the introduced alternative mechanical testing conditions. In doing so, test protocol translations to common qualification tests (or use condition thermal profiles) can be determined and are validated using the mechanical shear stress testing method. Plastic work density and maximum shear were calculated in the critical solder interconnects for different isothermal mechanical testing temperatures (22°C, 75°C, 100°C and 125°C) and the results are compared with the simulation results of different TC test conditions. This reliability determination with failure parameter isolation allows for improved integration with FEA modeling for a priori reliability prediction during the design process.

Author(s):  
Mahsa Montazeri ◽  
David R. Huitink

Abstract One key concern that arises from scaling of device interconnects with increasing power density requirements is electromigration (EM). On the other hand, thermal cycling fatigue has always been a reliability challenge in solder interconnects. Variations in device temperature caused by environmental or operating conditions induce stress in solders, as they usually connect two components with different coefficients of thermal expansion (CTE). These thermally induced stresses may lead to crack formation within the solders. The combination of EM effects and thermal cycling add to the complexity of the reliability estimation for high current density applications. In this work, a novel test setup has been designed and developed to estimate the reliability of solder interconnects under high current density, while a constant tensile stress is also applied to the solder interconnect. The test set up offers the ability to test up to four samples at the same time. Additionally, the test samples are fabricated with two copper wires connected by Pb/Sn solder to imitate copper UBM in a flip-chip bonding connection. Strain in solder is measured by monitoring the elongation of the wire during testing, while failure of the connection is detected by continuous monitoring of the electrical resistance. The experiment is conducted for conditions including pure tensile stress, pure EM and coupled EM and tensile stress where a significant reduction in life-time is observed for the coupled degradation effects. Comparing the experimental results of different current densities at different stress levels will help in identifying the nature of degradation in solders, which will help inform the drive for miniaturization.


2019 ◽  
Vol 141 (3) ◽  
Author(s):  
Mahsa Montazeri ◽  
Cody J. Marbut ◽  
David Huitink

In this work, a rapid and low-cost accelerated reliability test methodology which was designed to simulate mechanical stresses induced in flip–chip bonded devices during the thermal cycling reliability test under isothermal conditions, is introduced and demonstrated using power device analogous test chips. By stressing these devices in a controlled environment, mechanical stresses become decoupled from the design and temperature, such that useful lifetimes can be predictable. Mechanical shear stress was cyclically applied directly to device relevant, flip–chip solder interconnects while monitoring for failure. Herein, finite element analysis (FEA) is used to extract various damage metrics of different solder materials, including PbSn37/63, SAC305, and nanosilver, in both thermal operation and the introduced alternative mechanical testing conditions. Plastic work density and strain are calculated in the critical solder interconnects as factors that indicate the amount of the damage accumulation per cycle during the mechanical cycling, thermal cycling, and power cycling tests. The number of cycles to failure for each test was calculated using the fatigue life model developed by Darveaux for eutectic PbSn solder, while for SAC305 Syed's method was used, and for nanosilver, the Knoerr et al. equations are applied. The effects of environmental temperature and shearing force frequency were studied for the mechanical cycling reliability test, where a modified Norris–Landzberg equation for mechanical cycling tests was explored using the simulation results. Finally, comparing the mechanical cycling with the equivalent thermal cycling and power cycling demonstrated a significant reduction in required test duration to achieve a reliability estimation.


Electronics ◽  
2021 ◽  
Vol 10 (3) ◽  
pp. 324
Author(s):  
Carmelo Barbagallo ◽  
Santi Agatino Rizzo ◽  
Giacomo Scelba ◽  
Giuseppe Scarcella ◽  
Mario Cacciato

This work presents a step-by-step procedure to estimate the lifetime of discrete SiC power MOSFETs equipping three-phase inverters of electric drives. The stress of each power device when it is subjected to thermal jumps from a few degrees up to about 80 °C was analyzed, starting from the computation of the average power losses and the commitment of the electric drive. A customizable mission profile was considered where, by accounting the working conditions of the drive, the corresponding average power losses and junction temperatures of the SiC MOSFETs composing the inverter can be computed. The tool exploits the Coffin–Manson theory, rainflow counting, and Miner’s rule for the lifetime estimation of the semiconductor power devices. Different operating scenarios were investigated, underlying their impact on the lifetime of SiC MOSFETs devices. The lifetime estimation procedure was realized with the main goal of keeping limited computational efforts, while providing an effective evaluation of the thermal effects. The method enables us to set up any generic mission profile from the electric drive model. This gives us the possibility to compare several operating scenario of the drive and predict the worse operating conditions for power devices. Finally, although the lifetime estimation tool was applied to SiC power MOSFET devices for a general-purpose application, it can be extended to any type of power switch technology.


2016 ◽  
Vol 29 (1) ◽  
pp. 1-10
Author(s):  
Hong Long ◽  
Mark Sweet ◽  
Sankara Narayanan

One of the critical requirements for high power devices is to have rugged and reliable capability against hash operating conditions. In this paper, we present the dynamic voltage clamping capability of 3.3kV Field Stop Clustered IGBT devices under extreme inductive load condition. It shows that PMOS trench gate CIGBT structure with outstanding performance of fast turn-off time and low over-shoot voltage. Further optimization of current gain of CIGBT structure is analyzed through numerical evaluation. A step further in the safe operating area has been achieved for high voltage devices by CIGBT technology.


2004 ◽  
Vol 127 (2) ◽  
pp. 120-126 ◽  
Author(s):  
Daijiao Wang ◽  
Ronald L. Panton

Understanding the formation of voids in solder joints is important for predicting the long-term reliability of solder interconnects. This paper reports experimental research on the formation of void bubbles within molten solder bumps in flip-chip connections. For flip-chip-soldered electronic components, which have small solder volume, voids can be more detrimental to reliability. A previous theory based on thermocapillary flow reveals that the direction of heating influences void formation. Using different heating profiles, 480 solder joints of flip-chip assemblies were processed. A high-lead 90Pb∕8Sn∕2Ag solder was employed in the experiments. The solder samples were microsectioned to determine the actual size or diameter of the voids. A database on sizes and locations of voids was then constructed. More defective bumps, 80%, and higher void volume were found when the solder was melted from top (flip-chip side) to bottom (test board side). The observation on cases with melting direction from bottom to top had 40% defective bumps. The results show that a single big void is near the solder bump center with a few small voids near the edge. This supports the numerical study based on the thermocapillary theory. When the melting direction was reversed, many small voids appear near the edge. Big and middle-size voids tend to stay in the middle and outer regions from top towards middle layer of the bump. This experimental finding does not completely agree with the interpretation on the formation of voids by thermocapillary theory, however, the results do show that heat flux direction plays significant role in the formation and distribution of void bubbles in molten solder.


2020 ◽  
Vol 2020 (1) ◽  
pp. 000078-000084
Author(s):  
Hao Zhuang ◽  
Robert Bauer ◽  
Markus Dinkel

Abstract In the power semiconductor industry, there is continuous development towards higher maximum current capability of devices while device dimensions shrink. This leads to an increase in current density which the devices have to handle, and raises the question if electromigration (EM) is a critical issue here. Generally, an EM failure can be described by the Black’s equation with temperature and current density as the main influencing factors. Normally, the current that the power packages need to handle lies in the range of 100 A. However, it should be noted that power devices exhibit asymmetric sizes of drain and source contacts. This may lead to higher current density at the source leads (area ratio drain/source: ~8x for QFN 5×6). Nevertheless, the source lead area is still much larger than that of the flip chip bumps (i.e., 28 times larger compared to a 100 μm micro-bump). This typically enhances the safety of the power device with respect to EM. However, with regard to future development towards higher maximum current capability, we intended to investigate further on the EM of power devices. In the present work, we focused on the PQFN 5×6 package to study the EM behavior of a power device soldered on a Printed Circuit Board (PCB). We employed the highest current (120 A) and temperature (150 °C) that the stress test system could handle to study EM in accelerated mode. First fails occurred after ~1200 h, which was much earlier than expected from previous flip-chip investigations. In addition, we found separation gaps in the solder joint between drain contact and PCB, which experienced the lowest current density in the whole test. Contradictorily, we observed only minor solder degradation at the source interface, regardless of the higher current density there. Nevertheless, the separating metal interfaces still correlated well with the current direction. Thermal simulations revealed that due to the self-heating of the device by the high current applied, both the drain and source leads were exposed to much higher temperatures (Tmax = 168 °C) than the PCB board which was kept under temperature control at 150 °C. This temperature difference resulted in a thermal gradient between the device and PCB which, in turn, triggered thermal migration (TM) in addition to EM. As TM for the drain contact occurred in the same direction as EM, it enhanced the degradation effect and therefore led to a shorter time-to-failure at the drain. In contrast to this, such an enhanced effect did not occur at the source side. As a result, we observed higher solder degradation at the drain side, which we did confirm by switching the current direction in the test. To minimize the TM effect, a special EM test vehicle, which used a Cu plate instead of the MOSFET chip, was designed and fabricated. Thermal simulation verified that the device operated at similar temperatures as the PCB board. Using this setup, it was possible to study EM in an accelerated mode and, thus, investigate the pure EM behavior of the power device.


Sign in / Sign up

Export Citation Format

Share Document