Electrothermal Analysis of the Field-Plated AlGaN/GaN HEMTs With SiO2 Passivation

2017 ◽  
Author(s):  
Dogacan Kara ◽  
F. Nazli Donmezer Akgun
Keyword(s):  
High Electron Mobility Transistors ◽  
Operating Conditions ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Heating Effects ◽  
Device Reliability ◽  
Significant Research ◽  
Full Capacity ◽  
Gan Hemts ◽  
Power Densities

AlGaN/GaN high electron mobility transistors (HEMTs) are widely used in high frequency and power applications of the space and military industries due to their high RF power densities. When operated in full capacity, reliability of GaN HEMTs drop significantly due to device degradation, electron collapse phenomena, and concentrated heating effects. Although significant research has been done to investigate the effects of passivation, field-plates on the device degradation and the electron collapse separately, combined electrothermal analysis of the field-plates and the SiO2 passivation on GaN HEMTs has not been performed from the perspective of device reliability. For this purpose, electrothermal simulations of the field-plated and non-field-plated devices with different SiO2 passivation thicknesses are performed using Sentaurus TCAD to obtain the electrical field distribution and Joule heating caused temperature distribution in operating devices. Using these results, electrical and thermal effects of the field-plates on the devices with different SiO2 passivation thicknesses are analyzed to obtain the most effective and reliable operating conditions.

scholarly journals Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 400
Author(s):  
Van Cuong Nguyen ◽  
Kwangeun Kim ◽  
Hyungtak Kim
Keyword(s):  
Gas Sensors ◽  
Performance Optimization ◽  
Response Times ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Bias ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Sensing Characteristics

We investigated the sensing characteristics of NO2 gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of the FET-type sensors compared to the diode-type ones. When the sensor was biased near the threshold voltage, the electron density in the channel showed a relatively larger change with a response to the gas exposure and demonstrated a significant improvement in the sensitivity. At 300 °C under 100 ppm concentration, the sensor’s sensitivities were 26.7% and 91.6%, while the response times were 32 and 9 s at VG = 0 V and VG = −1 V, respectively. The sensor demonstrated the stable repeatability regardless of the gate voltage at a high temperature.

scholarly journals An analytical model for the current voltage characteristics of GaN-capped AlGaN/GaN and AlInN/GaN HEMTs including thermal and self-heating effects

2020 ◽  
Vol 10 (2) ◽  
pp. 1791
Author(s):  
A. Bellakhdar ◽  
A. Telia ◽  
J. L. Coutaz
Keyword(s):  
Analytical Model ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
Published Data ◽  
High Electron ◽  
Self Heating ◽  
Heating Effects ◽  
Cap Layer ◽  
Gan Hemts ◽  
Sheet Density

We present an analytical model for the I-V characteristics of AlGaN/GaN and AlInN/GaN high electron mobility transistors (HEMT). Our study focuses on the influence of a GaN capping layer, and of thermal and self-heating effects. Spontaneous and piezoelectric polarizations at Al (Ga,In)N/GaN and GaN/Al(Ga,In)N interfaces have been incorporated in the analysis. Our model permits to fit several published data. Our results indicate that the GaN cap layer reduces the sheet density of the two-dimensional electron gas (2DEG), leading to a decrease of the drain current, and that n+-doped GaN cap layer provides a higher sheet density than undoped one. In n+GaN/AlInN/GaN HEMTs, the sheet carrier concentration is higher than in n+GaN/AlGaN/GaN HEMTs, due to the higher spontaneous polarization charge and conduction band discontinuity at the substrate/barrier layer interface.

scholarly journals Physics-Based Intrinsic Model for AlGaN/GaN HEMTs

1999 ◽  
Vol 4 (S1) ◽  
pp. 775-780 ◽  
Author(s):  
Shangli Wu ◽  
Richard T. Webster ◽  
A. F. M. Anwar
Keyword(s):  
High Electron Mobility Transistors ◽  
High Electron ◽  
Small Signal ◽  
Transport Parameters ◽  
Ensemble Monte Carlo ◽  
Electron Mobility Transistors ◽  
Signal Parameters ◽  
Self Consistent ◽  
Consistent Solution ◽  
Gan Hemts

DC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson’s equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.

Construction of a Broad-Based Experimental and Computational Test Capability for High Power Wide Bandgap Semiconductor Devices

2007 ◽  
Author(s):  
Jason A. Carter ◽  
Matthew D. Roth ◽  
Michael W. Horgan ◽  
Lisa Shellenberger ◽  
Daniel P. Hoffmann ◽  
...  
Keyword(s):  
Thermal Stresses ◽  
High Electron Mobility Transistors ◽  
Operating Conditions ◽  
High Electron ◽  
Thermal Impedance ◽  
Analysis Model ◽  
Operational Parameters ◽  
Material Interfaces ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, the authors will discuss the development and implementation of a test stand to assess the impact of temperature on the performance of commercial X-band gallium nitride (GaN) on silicon carbide (SiC) high electron mobility transistors (HEMTs) designed for radio frequency (RF) communications platforms. The devices are tested under a range of operating temperatures and under a range of electrical operating conditions of variable gate and source-drain voltages to assess the impact of temperature on core operational parameters of the device such as channel resistance and transconductance. This test capability includes infrared thermography and transient thermal impedance measurements of the device. In addition to the experimental effort, the initial construction of a finite-volume numerical analysis model of the device will be discussed. The focus of these models will be the accurate assessment of device thermal impedance based on assumed thermal loads and eventually the assessment of accumulated thermal stresses at the material interfaces within the device and package structure.

Recent Reliability Progress of GaN HEMT Power Amplifiers

2012 ◽  
Vol 1432 ◽  
Author(s):  
Toshihiro Ohki ◽  
Masahito Kanamura ◽  
Yoichi Kamada ◽  
Kozo Makiyama ◽  
Yusuke Inoue ◽  
...  
Keyword(s):  
High Efficiency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Device Structure ◽  
Passivation Film ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Specific Device ◽  
Gan Hemts ◽  
A Current

ABSTRACTIn this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure of GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer were used to suppress the trap-related phenomena, such as a current collapse. Gate edge oxidation is effective for reducing the gate leakage current. A Ta-based barrier metal was inserted between an ohmic electrode and interconnection metal for preventing increase in contact resistance. SiN of passivation film was optimized for reducing the current collapse of short-gatelength HEMTs.

Reliability issues of Gallium Nitride High Electron Mobility Transistors

2010 ◽  
Vol 2 (1) ◽  
pp. 39-50 ◽  
Author(s):  
Gaudenzio Meneghesso ◽  
Matteo Meneghini ◽  
Augusto Tazzoli ◽  
Nicolo' Ronchi ◽  
Antonio Stocco ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
Failure Modes ◽  
Deep Level ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Stress Tests ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts

In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The role of temperature in promoting GaN HEMT failure is controversial, and the accelerating degradation factors are largely unknown. The present paper proposes a methodology for the analysis of failure modes and mechanisms of GaN HEMTs, based on (i) DC and RF stress tests accompanied by an (ii) extensive characterization of traps using deep level transient spectroscopy and pulsed measurements, (iii) detailed analysis of electrical characteristics, and (iv) comparison with two-dimensional device simulations. Results of failure analysis using various microscopy and spectroscopy techniques are presented and failure mechanisms observed at the high electric field values typical of the operation of these devices are reviewed.

Physics-Based Intrinsic Model for AlGaN/GaN HEMTs

1998 ◽  
Vol 537 ◽  
Author(s):  
Shangli Wu ◽  
Richard T. Webster ◽  
A. F. M. Anwar
Keyword(s):  
High Electron Mobility Transistors ◽  
High Electron ◽  
Small Signal ◽  
Transport Parameters ◽  
Ensemble Monte Carlo ◽  
Electron Mobility Transistors ◽  
Signal Parameters ◽  
Self Consistent ◽  
Consistent Solution ◽  
Gan Hemts

AbstractDC and intrinsic small signal parameters are reported for AlGaN/GaN high electron mobility transistors. The calculations are based upon a self-consistent solution of Schrödinger and Poisson's equation to model the quantum well formed in GaN. Transport parameters are obtained from an ensemble Monte Carlo simulation.

Comprehensive Analysis of Process Variability on AlGaN/GaN HEMTs through TCAD Simulations

2012 ◽  
Vol 711 ◽  
pp. 218-222
Author(s):  
Cristina Miccoli ◽  
Valeria Cinnera Martino ◽  
Salvatore Rinaudo
Keyword(s):  
Molar Fraction ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Strongly Correlated ◽  
Algan Layer ◽  
Process Variability ◽  
Field Plate ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Tcad Simulations

AlGaN/GaN high electron mobility transistors (HEMTs) have shown outstanding improvements in performance and reliability, becoming the leading option for power applications in the 1-40 GHz range. However, the presence of traps and defects in the hetero-structure are strongly correlated to the tolerance of the fabrication process. New powerful models designed to overcome limitations associated with the Process Variability (PV) may be part of the exploitation outcome. This work describes a methodology useful to characterize the effects of PV on AlGaN/GaN HEMTs performance, by deriving Process Compact Model (PCM) from systematic TCAD simulations. The device under examination is an Al0.26Ga0.74N/GaN HEMT and the selected critical process parameters are: molar fraction of the first AlGaN layer, AlGaN layer thickness, source-gate and drain-gate distance, field plate extension, gate height and width, recessed effect under the gate contact.

scholarly journals Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

2011 ◽  
Vol 3 (3) ◽  
pp. 301-309 ◽  
Author(s):  
Olivier Jardel ◽  
Guillaume Callet ◽  
Jérémy Dufraisse ◽  
Michele Piazza ◽  
Nicolas Sarazin ◽  
...  
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Power Added Efficiency ◽  
Electron Mobility Transistors ◽  
X Band ◽  
Gan Hemts ◽  
Load Pull ◽  
Interesting Alternative

A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

Growth Characteristics of AlGaN/GaN HEMTs on Patterned Si (111) Substrates Using Double AlN Interlayers by MOCVD

2011 ◽  
Vol 396-398 ◽  
pp. 372-375 ◽  
Author(s):  
Yong Wang ◽  
Nai Sen Yu ◽  
Cong Shun Wang ◽  
Kei May Lau
Keyword(s):  
Chemical Vapor ◽  
High Electron Mobility Transistors ◽  
Growth Conditions ◽  
Growth Characteristics ◽  
Organic Chemical ◽  
High Electron ◽  
Si Substrates ◽  
Electron Mobility Transistors ◽  
Thermal Expansion Coefficients ◽  
Gan Hemts

AlGaN/GaN high electron mobility transistors (HEMTs) were grown on un-patterned, patterned without mask, and patterned with mask Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The patterns on the Si substrates were fabricated by SiO2 masks and wet etching. Double AlN interlayers grown at high temperature were employed to relax the tensile stress induced by the large mismatches in the lattice constants and the thermal expansion coefficients. Growth characteristics of AlGaN/GaN HEMTs were discussed and analyzed. Before achieving optimized growth conditions, more cracking lines were observed on patterns along the [1-100] orientation than along the [11-20] orientation, resulted from more stable GaN (1-100) facets than GaN (11-20) facets. It is suggested that long patterns should be made along the [11-20] orientation. Micro-Raman measurements showed that Raman shifts at the concave corners are bigger than those at the convex corners, indicating the presence of the larger stress at the concave corners.

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