Simulations of Impulsive Dynamics in RF MEMS Capacitive Switches

2011 ◽  
Author(s):  
Ayyaswamy Venkattraman ◽  
Alina Alexeenko
Keyword(s):  
Rf Mems ◽  
Low Cost ◽  
Enabling Technology ◽  
Capacitive Switches ◽  
Dynamic Simulations ◽  
Micro Electro Mechanical Systems ◽  
Mems Switch ◽  
Gas Damping ◽  
Power Switches ◽  
Impulsive Dynamics

Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) have emerged as a promising enabling technology for low-cost and low-power switches, actuators, and sensors. However, the reliability of these devices, especially those involving repeated contacting events, remains a major stumbling block for their widespread adaptation. In this work we present dynamic simulations of RF MEMS switch response due to electrostatic actuation in the presence of gas damping and residual stress. The dynamics emerging from the interaction between the beam structure and gas environment shows generation of stress waves induced by contact. It has been observed that these impulsive effects could lead to transient stresses that are significantly greater than the steady state bending stress. S-N curves for LIGA Nickel are used to make predictions for the lifetime at various voltages and operating gas pressures that show pressure dependence consistent with earlier experimental observations.

Scope of RF MEMS Technology for Microwave Circuits and Systems

2021 ◽  
pp. 1-22
Author(s):  
Kanthamani Sundharajan
Keyword(s):  
Rf Mems ◽  
Low Cost ◽  
Microwave Circuits ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Phased Array Antennas ◽  
Array Antennas ◽  
Rf Mems Switches ◽  
Mems Technology ◽  
Key Issues

Micro-electro mechanical systems (MEMS) technology has facilitated the need for innovative approaches in the design and development of miniaturized, effective, low-cost radio frequency (RF) microwave circuits and systems. This technology is expected to have significant role in today's 5G applications for the development of reconfigurable architectures. This chapter presents an overview of the evolution of MEMS-based subsystems and devices, especially switches and phased array antennas. This chapter also discusses the key issues in design and analysis of RF MEMS-based devices, particularly with primary emphasis on RF MEMS switches and antennas.

RF-MEMS Based Oscillators

2012 ◽  
pp. 120-155
Author(s):  
Anis Nurashikin Nordin
Keyword(s):  
Acoustic Wave ◽  
Rf Mems ◽  
Low Cost ◽  
Individual Characteristics ◽  
Bulk Acoustic Wave ◽  
Mems Devices ◽  
Device Structure ◽  
Micro Electro Mechanical Systems ◽  
Wireless Transceiver ◽  
Film Bulk

Today’s high-tech consumer market demand complex, portable personal wireless consumer devices that are low-cost and have small sizes. Creative methods of combining mature integrated circuit (IC) fabrication techniques with innovative radio-frequency micro-electro-mechanical systems (RF-MEMS) devices has given birth to wireless transceiver components, which operate at higher frequencies but are manufactured at the low-cost of standard ICs. Oscillators, RF bandpass filters, and low noise amplifiers are the most critical and important modules of any wireless transceiver. Their individual characteristics determine the overall performance of a transceiver. This chapter illustrates RF-oscillators that utilize MEMS devices such as resonators, varactors, and inductors for frequency generation. Emphasis will be given on state of the art RF-MEMS components such as film bulk acoustic wave, surface acoustic wave, flexural mode resonators, lateral and vertical varactors, and solenoid and planar inductors. The advantages and disadvantages of each device structure are described, with reference to the most recent work published in the field.

Quantification of Uncertainty in Creep Failure in RF-MEMS Switches

2012 ◽  
Author(s):  
Peter A. Kolis ◽  
Marisol Koslowski ◽  
Anil K. Bajaj
Keyword(s):  
Rf Mems ◽  
Beam Model ◽  
Creep Failure ◽  
Micro Electro Mechanical Systems ◽  
Modal Expansion ◽  
Mems Switches ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Rf Mems Switches

We present simulations of the dynamic response of radio frequency micro-electro-mechanical-systems (RF-MEMS) switches undergoing creep deformation. The model includes a microscale-informed Coble creep formulation incorporated in a beam model of an electrostatically actuated RF-MEMS switch, and it is solved using a Ritz-Galerkin based modal expansion. The resulting effects on the long-term device behavior as well as the implications of uncertainty in the device geometry and material parameters are studied. We find that the addition of creep to the beam model results in an undesired degradation of the device performance, as evidenced by decreases in the closing and release voltages.

RF-MEMS Varactor With Minimal Contact

2004 ◽  
Author(s):  
Qin Shen ◽  
Ioannis Chasiotis ◽  
N. Scott Barker
Keyword(s):  
Rf Mems ◽  
Phase Shifters ◽  
Capacitive Switches ◽  
Intimate Contact ◽  
Rf Mems Switch ◽  
Mems Switch ◽  
Capacitance Ratio ◽  
Matching Networks ◽  
Minimal Contact ◽  
Bottom Side

An innovative RF-MEMS varactor has been developed for use in distributed RF-MEMS circuits such as phase shifters and tunable matching networks where the capacitance ratio between on- and off- state must be limited to 2–10. By fabricating standoffs on the bottom side of the beam, this device eliminates the intimate contact between the FR-MEMS and dielectric, that is found in typical RF-MEMS beam capacitive switches. These standoffs limit the range of motion, allowing the capacitance ratio to be set, and also greatly reduces the contact area thus preventing stiction from occurring. The RF-MEMS switch has been fabricated with initial measurements demonstrating a capacitance ratio of 2.5. Preliminary reliability testing results demonstrate that this RF-MEMS design is very robust.

A correlation of capacitive RF-MEMS reliability to AlN dielectric film spontaneous polarization

2009 ◽  
Vol 1 (1) ◽  
pp. 43-47 ◽  
Author(s):  
Eleni Papandreou ◽  
George Papaioannou ◽  
Tomas Lisec
Keyword(s):  
Electrical Properties ◽  
Spontaneous Polarization ◽  
Degradation Rate ◽  
Rf Mems ◽  
Dielectric Film ◽  
Capacitive Switches ◽  
Metal Insulator ◽  
Micro Electro Mechanical Systems ◽  
Metal Insulator Metal ◽  
Life Tests

This paper investigates the effect of spontaneous polarization of magnetron-sputtered aluminum nitride on the electrical properties and reliability of Radio Frequency – Micro-Electro-Mechanical Systems capacitive switches. The assessment is performed with the aid of application of thermally stimulated polarization currents in metal-insulator-metal capacitors and temperature dependence of device capacitance. The study reveals the presence of a surface charge, which is smaller than that expected from material spontaneous polarization, but definitely is responsible for the low degradation rate under certain bias polarization life tests.

Design and characterization of an active recovering mechanism for high-performance RF MEMS redundancy switches

2011 ◽  
Vol 3 (5) ◽  
pp. 539-546 ◽  
Author(s):  
Francesco Solazzi ◽  
Augusto Tazzoli ◽  
Paola Farinelli ◽  
Alessandro Faes ◽  
Viviana Mulloni ◽  
...  
Keyword(s):  
High Performance ◽  
Rf Mems ◽  
Time To Failure ◽  
Micro Electro Mechanical Systems ◽  
Mems Switch ◽  
Rf Measurement ◽  
Switch Time ◽  
Measurement Results ◽  
Better Than

This paper presents the design and characterization of an active push/pull toggle RF micro-electro-mechanical systems (MEMS) switch for satellite redundancy networks. The actively controlled pull-up mechanism allows for extended restoring capabilities of the switch in case of ON-state stiction. As a proof of concept an active push/pull MEMS capacitive switch was modeled, designed, and manufactured in shunt configuration on a 50 Ω coplanar transmission line. RF measurement results show a return loss better than 15 dB in the 0.1–40 GHz range and an insertion loss better than 0.5 dB over the same range. The restoring capability of the switch was experimentally proved up to 9 h, and a predictive model was proposed for the estimation of the switch time to failure.

scholarly journals Laterally Movable Triple Electrodes Actuator toward Low Voltage and Fast Response RF-MEMS Switches

Sensors ◽  
2019 ◽  
Vol 19 (4) ◽  
pp. 864 ◽  
Author(s):  
Yasuyuki Naito ◽  
Kunihiko Nakamura ◽  
Keisuke Uenishi
Keyword(s):  
Rf Mems ◽  
Low Voltage ◽  
Low Cost ◽  
Actuation Voltage ◽  
Fast Response ◽  
Point Of View ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Series Switch

A novel actuator toward a low voltage actuation and fast response in RF-MEMS (radio frequency micro-electro-mechanical systems) switches is reported in this paper. The switch is comprised of laterally movable triple electrodes, which are bistable by electrostatic forces applied for not only the on-state, but also the off-state. The bistable triple electrodes enable the implementation of capacitive series and shunt type switches on a single switch, which leads to high isolation in spite of the small gap between the electrodes on the series switch. These features of the actuator are effective for a low voltage and fast response actuation in both the on- and off-state. The structure was designed in RF from a mechanical point of view. The laterally movable electrodes were achieved using a simple, low-cost two-mask process with 2.0 µm thick sputtered aluminum. The characteristics of switching response time and actuation voltage were 5.0 µs and 9.0 V, respectively.

The low-complexity RF MEMS switch at EADS: an overview

2011 ◽  
Vol 3 (5) ◽  
pp. 499-508 ◽  
Author(s):  
Bernhard Schoenlinner ◽  
Armin Stehle ◽  
Christian Siegel ◽  
William Gautier ◽  
Benedikt Schulte ◽  
...  
Keyword(s):  
Microelectromechanical Systems ◽  
Silicon Oxide ◽  
Rf Mems ◽  
Low Cost ◽  
Low Complexity ◽  
Phase Shifters ◽  
Experimental Investigations ◽  
Rf Mems Switch ◽  
Capacitive Switch ◽  
Mems Switch

This paper gives an overview of the low-complexity radio frequency microelectromechanical systems (RF MEMS) switch concept and technology of EADS Innovation Works in Germany. Starting in 2003, a capacitive switch concept, which is unique in several aspects, was developed to address specific needs in the aeronautic and space. Thermally grown silicon oxide as dielectric layer, the silicon substrate as actuation electrode, and a conductive zone realized by ion implantation make the EADS RF MEMS switch a very simple, low-cost, and reliable approach. In this document, data on experimental investigations are presented, which demonstrate outstanding performance figures in terms of insertion loss, isolation, frequency range, bandwidth, RF-power handling, and robustness with respect to thermal load. Based on this concept, numerous different circuits in particular single-pole single-throws (SPSTs), single-pole multi-throws (SPMTs), tunable filters, phase shifters, and electronically steerable antennas between 6 and 100 GHz have been designed, fabricated, and characterized.

scholarly journals RF MEMS Switch Fabrication and Packaging

2020 ◽  
Author(s):  
Lakshmi Swaminathan
Keyword(s):  
Communication Systems ◽  
High Performance ◽  
Satellite Communication ◽  
Rf Mems ◽  
Mems Devices ◽  
Micro Electro Mechanical Systems ◽  
Mems Switches ◽  
Mems Switch ◽  
Hermetic Sealing ◽  
Rf Mems Switches

RF (Radio Frequency) MEMS (Micro Electro Mechanical Systems) technology is the application of micromachined mechanical structures, controlled by electrical signals and interacting with signals in the RF range. The applications of these devices range from switching networks for satellite communication systems to high performance resonators and tuners. RF MEMS switches are the first and foremost MEMS devices designed for RF technology. A specialized method for fabricating microsturctures called surface micromachining process is used for fabricating the RF MEMS switches. Die level packaging using available surface mount style RF packages. The packaging process involved the design of RF feed throughs on the Alumina substrates to the die attachment, wire bonding and hermetic sealing using low temperature processes.

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