Activation Energy Measurement in Thin Gold Film by MEMS-Based Tensile Testing Device
In this paper, we report a methodology to measure activation energy for time-dependent stress-relaxation in a thin free-standing tensile specimen by utilizing a MEMS-based tensile testing device. An analytical model is developed to investigate its stress-relaxation behavior. Along with this analytical model of the MEMS tensile tester, Arrhenius relation is applied to estimate relaxation times for different temperatures of a free-standing sample beam. From the relation between relaxation time and temperature, the activation energy for the stress-relaxation is obtained. For a 200-nm Au film, we obtained the relaxation time of 250, 67, and 40 seconds for the corresponding temperatures of 295, 312, and 323 K, respectively. The activation energy for stress-relaxation was 0.544 eV. The experimental data is fitted with the analytical model to find the relaxation time. The thin film on the MEMS tensile tester is prepared by sputter-deposition. By optical lithography and ICP DRIE Si etching, the MEMS tensile tester with a free standing beam is fabricated.