Fixed Abrasive Diamond Wire Saw Slicing of Single Crystal SiC Wafers

Author(s):  
Craig W. Hardin ◽  
Jun Qu ◽  
Albert J. Shih

This paper investigates the slicing of single crystal SiC with a fixed abrasive diamond wire. A spool-to-spool rocking motion diamond wire saw machine using a 0.22 mm nominal diameter diamond wire with electroplated bond and 20 μm average size diamond grit is used. The effect of wire downfeed speed on wafer surface roughness and subsurface damage is first investigated. The surface marks due to the loose diamond and stagnation of the wire during the change in wire cutting direction are studied. A scanning acoustic microscope is explored as a non-destructive evaluation method to identify the level of subsurface damage. Another set of tests investigates the effects of using a new diamond wire on the cutting forces and surface roughness. Scanning electron microscopy (SEM) is applied to examine the machined surfaces and the diamond wire wear. This study demonstrated the feasibility of fixed abrasive diamond wire cutting of SiC wafers and the usage of a scanning acoustic microscope to study the machining subsurface damage.

2007 ◽  
Vol 359-360 ◽  
pp. 450-454 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge ◽  
Zhi Jian Hou

The physical model of fixed-abrasive diamond wire-sawing monocrystalline silicon was founded to analyze the elastic deformation of the wire, supposing that every grit was connected to the surface of the wire by a spring. Ignoring lateral vibration of the wire, the geometrical model of wire-sawing was founded; the average cut depth of single grit was calculated theoretically. Based the indentation fracture mechanics and investigations on brittle-ductile transition of machining monocrystalline silicon, the removal mechanism and surface formation was studied theoretically. It shows that in the case of wire-sawing velocity of 10m/s or higher, infeed velocity of 0.20mm/s and diamond grain size of 64μm or smaller, the chip formation and material removal is in a brittle regime mainly, but the silicon wafer surface formation is sawed in a ductile regime. The size of the abrasives, the wire-saw velocity and infeed velocity can influence the sawing process obviously.


2010 ◽  
Vol 97-101 ◽  
pp. 15-18 ◽  
Author(s):  
Chun Yan Yao ◽  
Ming Huan Wang ◽  
Wei Peng

Diamond wire saw is the leading technology for use in slicing hard brittle material. This paper provides a brief review of its research progress in the most recent years. According to the bonding material kinds of diamond wire saw, it can be classified into three main categories, i.e. metallic bonding materials, organic bonding materials, and resin bonding materials. In the past decade, several new major technical developments in fixed abrasive diamond wire saw have emerged. This paper investigates the related literature on four different types of fixed abrasive diamond wire saws, presents their manufacturing processes and machining performance, and compares the tension and anti-abrasion of the wire saws, removal efficiency of slicing, and their applications in silicon slicing.


Author(s):  
Fuqing Liu ◽  
Chunyan Yao ◽  
Wei Peng

Wire saw, with its ability to cut hard brittle material, such as silicon ingots, crystals and quartz, has emerged as a leading technology for production in semiconductor and photovoltaic industry. There are some defects in conventional loose abrasive wire saw such as significant industrial waste, low machining efficiency, high running costs, etc. As a countermeasure to these problems, some fixed-abrasive diamond wire saws are produced by electroplating process, bonding with resin agent or mechanical embedding of abrasive grains into piano wires. Nevertheless, there still exist disadvantages such as low efficiency of bonding process and high manufacture cost. For this reason, in the research, an idea of making fixed-abrasive diamond wire saw bonded with ultraviolet-curing resin is proposed. In manufacture process, generally, the preparation of materials, improvement of adhesion, and the art of ultraviolet curing determine what technologies is most effective. Therefore, to attain a specific set of properties in the cured wire saw and to achieve an efficient ultraviolet-curing process, the factors that influence the photopolymerization should be well understood. In this paper, the manufacturing process of an ultraviolet-curing resin wire saw is illustrated. Moreover, slicing experiments are deduced to evaluate the results of the study.


2011 ◽  
Vol 121-126 ◽  
pp. 1595-1599
Author(s):  
Chun Yan Yao ◽  
Jin Sheng Wang ◽  
Zhong Hua Xu ◽  
Qiao Fang Zhang ◽  
Ming Huang Wang ◽  
...  

Fixed-abrasive diamond wire saw is widely used for slicing semiconductor materials. In this paper, a novel manufacturing method is studied by using polyethylene wire to replace the traditional metallic core wire. A new coating device of ultraviolet-curing for rapidly making diamond wire saw is developed. In terms of tensile strength experiments’ results, a high strength polyethylene multi-strand wire is finally selected as the core wire of the fixed-abrasive wire saws. Experimental results show that the high tensile strength of polyethylene multi-strand wire can satisfy the technical requirements of fixed-abrasive wire saws.


2013 ◽  
Vol 395-396 ◽  
pp. 1044-1048
Author(s):  
Liao Yuan Zhang ◽  
Shuo Wang ◽  
Zhong Qing Shao ◽  
Zhong Xiu Lv

In this paper, on the basis of a large number of literature at home and abroad are summarized, we used the complete with independent intellectual property rights ultrasound wire-cutting processing machine tool to carry out machining experiment , and the ultrasonic wire cutting mechanism and process was carried out in-depth study. The results showed: compared with ordinary sawing, the cutting efficiency of applying ultrasonic action was high, its cutting force and surface roughness was small, at the same time ,used the software of ABAQUS finite element simulation analysis, and further studied on the law of electroplated diamond wire saw ultrasonic vibration cutting of composite processing technology process.


2020 ◽  
Vol 185 ◽  
pp. 105851
Author(s):  
Jian Qiu ◽  
Xiaofei Li ◽  
Renpeng Ge ◽  
Shanbao Zhang ◽  
Haichao Wang

2006 ◽  
Vol 505-507 ◽  
pp. 1219-1224 ◽  
Author(s):  
Pei Lum Tso ◽  
Bo Huei Yan ◽  
Chan Hsing Lo

Presently, the loose abrasive wire saw is the most commonly used technique for slicing hard and brittle materials. However its productivity is relatively low. A diamond wire saw has been developed for slicing brittle materials such as silicon wafer. The objects of this paper is to make the thin diamond wire saw apply to high cost production in semiconductor industries with the effective processing parameters such as machined surface roughness, material removal rate, the wear of the wire and the kerf width of the slicing. Effects of processing parameters on the performance of the diamond wire sawing processes are investigated by using the Taguchi method for this design of experiment (DOE). The analysis of the result shows that the optimal combinations for good surface roughness are small grain size, high wire speed, and low feed rate. Wire speed and feed rate are positively related to material removal rate.


Author(s):  
Shujuan Li ◽  
Aofei Tang ◽  
Yong Liu ◽  
Jiabin Wang ◽  
Dan Cui ◽  
...  

Free abrasive diamond wire saw machining is often used to cut hard and brittle materials, especially for wafers in the semiconductor and optoelectronics industries. Wire saws, both free and fixed abrasive, have excellent flexibility, as compared to inner circular saws, outer saws, and ribbon saws, as they produce a narrower kerf, lower cutting forces, and less material waste. However, fixed abrasive wire saw machining is being considered more and more due to its potential for increased productivity and the fact that it is more environmentally friendly as it does not use special coolants that must be carefully disposed. The cutting forces generated during the wire saw process strongly affect the quality of the produced parts. However, the relationship between these forces and the process parameters has only been explored qualitatively. Based on analyzing the forces generated from the chip formation and friction of a single abrasive, this study derives an analytical cutting force model for the wire saw machining process. The analytical model explains qualitative observations seen in the literature describing the relationship between the cutting forces and the wafer feed rate, wire velocity, and contact length between the wire and wafer. Extensive experimental work is conducted to validate the analytical force model. Silicon carbide (SiC) monocrystal, which is employed extensively in the fields of microelectronics and optoelectronics and is known to be particularly challenging to process due to its extremely high hardness and brittleness, is used as the material in these experimental studies. The results show that the analytical force model can predict the cutting forces when wire saw machining SiC monocrystal wafers with average errors between the experimental and predicted normal and tangential forces of 9.98% and 12.1%, respectively.


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