Fabrication of Piezoelectric Al0.3Ga0.7As Heterostructures

2003 ◽  
Author(s):  
Parshant Kumar ◽  
Lihua Li ◽  
L. C. Calhoun ◽  
P. Boudreaux ◽  
Don L. DeVoe
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Inductively Coupled Plasma ◽  
Molecular Beam ◽  
Electromechanical Coupling ◽  
Wet Etching ◽  
Inductively Coupled ◽  
Molecular Beam Epitaxial ◽  
New Process ◽  
Molecular Beam Epitaxial Growth

A new process has been developed for the fabrication of AlGaAs-based MEMS which the inherent piezoelectric transduction present in this material to be used for sensing and actuation. The process combines molecular beam epitaxial growth of single-crystal Al0.3Ga0.7As multilayer, inductively coupled plasma reactive-ion etching (ICP-RIE), and highly selective wet etching of GaAs to produce released Al0.3Ga0.7As structures. The process has been validated through the fabrication of both cantilever and doubly clamped beam structures, and has wider use for applications where large electromechanical coupling strength and single-crystal heterostructure are desired.

Molecular beam epitaxial growth of tungsten layers embedded in single crystal gallium arsenide

1985 ◽  
Vol 47 (11) ◽  
pp. 1187-1189 ◽  
Author(s):  
J. P. Harbison ◽  
D. M. Hwang ◽  
J. Levkoff ◽  
G. E. Derkits
Keyword(s):  
Gallium Arsenide ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrates

2011 ◽  
Vol 98 (9) ◽  
pp. 092901 ◽  
Author(s):  
C. Merckling ◽  
G. Saint-Girons ◽  
C. Botella ◽  
G. Hollinger ◽  
M. Heyns ◽  
...  
Keyword(s):  
Single Crystal ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of gallium nitride nanowires on atomic layer deposited aluminum oxide

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Aluminum Oxide ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of low‐resistivity ZnSe films

1979 ◽  
Vol 35 (2) ◽  
pp. 97-98 ◽  
Author(s):  
Takafumi Yao ◽  
Yunosuke Makita ◽  
Shigeru Maekawa
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm

2000 ◽  
Vol 208 (1-4) ◽  
pp. 93-99 ◽  
Author(s):  
Y Nakata ◽  
K Mukai ◽  
M Sugawara ◽  
K Ohtsubo ◽  
H Ishikawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Light Emission ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth
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