Time-Dependent Simulations of Sub-Continuum Heat Generation Effects in Electronic Devices Using the Lattice Boltzmann Method

2003 ◽  
Author(s):  
Rodrigo A. Escobar ◽  
Sartaj S. Ghai ◽  
Cristina H. Amon ◽  
Myung S. Jhon
Keyword(s):  
Lattice Boltzmann Method ◽  
Heat Generation ◽  
Lattice Boltzmann ◽  
Phonon Scattering ◽  
Constant Heat Flux ◽  
Silicon On Insulator ◽  
Wave Nature ◽  
Temperature Levels ◽  
Boltzmann Method ◽  
Fourier Equation

The lattice Boltzmann method (LBM), which accounts for electron-phonon scattering, is used to investigate heat generation effects on silicon-on-insulator (SOI) transistors. The wave nature of the LBM is shown and its influence on subcontinuum dynamics is discussed. The implementation of boundary conditions for constant temperature and constant heat flux is described. SOI devices are modeled as thin films in one dimension. The LBM simulation results for diffusive, transitional, and ballistic regimes are compared with Fourier equation solutions and literature results. For transitional and ballistic regimes, Fourier equation results underpredict the temperature levels obtained by the LBM, which is consistent with the findings previously reported by different authors.

Thermal Transport in Hotspots Using the Lattice Boltzmann Method with Application to Silicon-on-Insulator Transistors

2014 ◽  
Vol 960-961 ◽  
pp. 337-340
Author(s):  
Yu Dong Mao ◽  
Ming Tian Xu
Keyword(s):  
Energy Density ◽  
Lattice Boltzmann Method ◽  
Lattice Boltzmann ◽  
Thermal Wave ◽  
Electronic Devices ◽  
Silicon On Insulator ◽  
Thermal Waves ◽  
Fourier Law ◽  
Wave Effect ◽  
Boltzmann Method

Silicon-on-insulator (SOI) transistors have been widely used in the micro-electronic devices. The Lattice Boltzmann method (LBM) is employed to simulate the heat conductions of hotspots appeared in a SOI transistor. The results show that a thermal wave effect is appeared in micro-region, and it can not be found in Fourier prediction. Comparing the results obtained by the Fourier law and LBM, we find that the LBM solution shows approximately 22% higher energy density than the Fourier prediction. When two thermal waves form different hotspots meet together, a significant energy enhancement will be appeared.

Sub-Continuum Heat Conduction in Electronics Using the Lattice Boltzmann Method

2003 ◽  
Author(s):  
Sartaj S. Ghai ◽  
Rodrigo A. Escobar ◽  
Myung S. Jhon ◽  
Cristina H. Amon
Keyword(s):  
Heat Conduction ◽  
Lattice Boltzmann Method ◽  
Lattice Boltzmann ◽  
Internal Heat ◽  
Numerical Data ◽  
Computational Effort ◽  
Silicon On Insulator ◽  
Boltzmann Transport ◽  
Boltzmann Method

The lattice Boltzmann method (LBM) is used to examine multi-length scale, confined heat conduction problems in one dimension for which sub-continuum effects are important. This paper describes the implementation of the method and its application to electronic devices. A silicon-on-insulator device with internal heat generation is used as a case study to illustrate the advantages of the LBM. We compare our results with various hierarchical equations of heat transfer such as Fourier, Cattaneo, and Boltzmann transport equations, as well as with experimental and numerical data from the literature. Our results provide excellent agreement with other methodologies, at a far less computational effort.

Lattice Boltzmann Modeling of Ultrafast Laser Heating on Metal Film

2013 ◽  
Author(s):  
Dadong Wang ◽  
Yanbao Ma
Keyword(s):  
Transport Equation ◽  
Lattice Boltzmann Method ◽  
Lattice Boltzmann ◽  
Laser Heating ◽  
Metal Film ◽  
Phonon Scattering ◽  
Boltzmann Transport Equation ◽  
Ultrafast Laser ◽  
Boltzmann Transport ◽  
Boltzmann Method

Lattice Boltzmann method based on Boltzmann transport equation is developed to simulate the nanoscale heat transport in metal film. The Boltzmann transport equation is applicable to describe both electron and phonon scattering processes: the absorption of photon energy by electrons and the subsequent heating of metal lattice (phonons) through electron-phonon collisions. We show that the Boltzmann transport equation can give rise to the well-known two-temperature model. To validate our numerical tool, ultrafast laser heating on metal film is analyzed by lattice Boltzmann method and finite difference method based on two-step model separately, and exactly the same results are obtained. The predicted transient reflectivity changes agree with picosecond laser heating experiments data also.

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