Enhancing the Power Handling Capacity of Micro Mirrors: An Experimental and Numerical Investigation

2002 ◽  
Author(s):  
D. Shao ◽  
H. Panchawagh ◽  
R. L. Mahajan
Keyword(s):  
Silicon Carbide ◽  
Structural Material ◽  
Numerical Investigation ◽  
Laser Diode ◽  
Optical Power ◽  
Maximum Power ◽  
Center Wavelength ◽  
Numerical Work ◽  
Power Handling ◽  
Methods Numerical

In this paper we present three techniques to improve optical power handling capacity of micro-mirrors: (a) improving flexure conduction, (b) improving reflectivity of micro-mirrors and (c) using silicon carbide as MEMS structural material. Mirrors fabricated in Multi-User MEMS Processes (MUMPs) are used as prototype models. It is shown numerically that these three techniques can improve the power handling capacity of the mirrors by factors of 1.25, 4–13 and 7 respectively. Further enhancement can be achieved by using the combination of these methods. Numerical work in this paper was done using Coventorware® while experiments were carried out using an 808 nm center wavelength laser diode with maximum power of 1 W.

Experiment Investigation of the Temperature Characteristics of 975nm SLD

2012 ◽  
Vol 588-589 ◽  
pp. 761-764
Author(s):  
Hong Bo An ◽  
Bing Hua Su ◽  
Li Hong Niu
Keyword(s):  
Semiconductor Laser ◽  
Conversion Efficiency ◽  
Laser Diode ◽  
Optical Power ◽  
Red Shift ◽  
Center Wavelength ◽  
Output Optical Power ◽  
Temperature Characteristics ◽  
Long Wavelength ◽  
Semiconductor Laser Diode

The output optical power and spectra of a 975 nm semiconductor laser diode (SLD) were measured and analyzed when the SLD was operated with different current in the temperature range of -10°C—65°C. The results showed that the output center wavelength of the SLD shifts in the direction of long wavelength as the operation current and temperature rises. The slopes were approximately 0.24nm/100mA and 0.36nm/°C, respectively. Furthermore, the Conversion efficiency of the SLD was higher when the temperature was low. The reasons for the red shift of SLD was theoretical analyzed.

Optical power handling properties of polymeric nonlinear optical waveguides

1993 ◽  
Vol 74 (8) ◽  
pp. 4871-4876 ◽  
Author(s):  
M. A. Mortazavi ◽  
H. N. Yoon ◽  
C. C. Teng
Keyword(s):  
Optical Waveguides ◽  
Nonlinear Optical ◽  
Optical Power ◽  
Power Handling

Silicon Carbide UV Based Photovoltaic for Hostile Environments

2009 ◽  
Vol 615-617 ◽  
pp. 885-888 ◽  
Author(s):  
Simon Barker ◽  
Rupert C. Stevens ◽  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Nicolas G. Wright ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Power Density ◽  
Maximum Power ◽  
Energy Scavenging ◽  
Power Cables ◽  
Maximum Power Density ◽  
Halogen Bulb ◽  
Cv Measurements ◽  
Hostile Environments ◽  
Light Form

The development of silicon carbide technologies has allowed for the development of sensors and electronics to measure the changes in a variety of hostile environments. A problem has been identified with reliable and efficient ways to power such sensors in these hostile environments. It is likely to be impractical to run power cables to these sensors and battery power has a finite lifetime. Recent research has demonstrated many energy scavenging techniques but to date none have been developed with a view of operation in hostile environments. To investigate the power density achievable from a SiC based energy scavenging device a SiC pin diode was exposed to both broad spectrum light form a tungsten halogen bulb and a 255 nm UV source. IV and CV measurements were used to determine the structural properties and photovoltaic response of the device, dark saturation current, induced photo current and the fill factor. We present the characteristics and maximum power density of these devices at temperatures between 300 K and 600 K. We demonstrate that the maximum power density achievable decreases with temperature. This is mostly due to the reduction in the built in potential from the pn junction, and the reduction of the generated photocurrent.

Development of a Silicon Carbide Micro Four-Point Probe

2004 ◽  
Author(s):  
Arnab Choudhury ◽  
Peter J. Hesketh
Keyword(s):  
Silicon Carbide ◽  
Structural Material ◽  
Amorphous Silicon ◽  
Process Development ◽  
Film Resistance ◽  
Amorphous Silicon Carbide ◽  
Van Der Pauw ◽  
Square Array

The process development and fabrication of a cantilever-based micro four-point probe (MFPP) is presented. This device will allow for characterization of film resistance with micrometer-scaled resolution. The proble is designed for deployment on a commercial AFM. The cantilevers are made of amorphous silicon carbide (a-SiC) and the probe body using SU8. The probe consists of two sets of cantilevers, with integrated tips, on parallel planes 8.68 μm apart. This allows the probe to contact the surface in a square array and perform a van der Pauw type measurement. Studies to characterize, pattern and dope the a-SiC have been performed to utilize silicon carbide as both the cantilever structural material as well the conductive element in the sensor. The MFPP has been fabricated and some preliminary tests have been performed.

Coupling of high power laser diode optical power

1991 ◽  
Vol 30 (18) ◽  
pp. 2514 ◽  
Author(s):  
Murphy J. Landry ◽  
Jeffrey W. Rupert ◽  
Anthony Mittas
Keyword(s):  
Laser Diode ◽  
High Power ◽  
Optical Power ◽  
High Power Laser ◽  
Power Laser ◽  
High Power Laser Diode

The First Nitride Laser Diode on Silicon Carbide

1997 ◽  
Vol 482 ◽  
Author(s):  
J. D. Brown ◽  
J. T. Swindell ◽  
M. A. L. Johnson ◽  
Zhonghai Yu ◽  
J. F. Schetzina ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Output Power ◽  
Laser Diode ◽  
Light Output ◽  
Spectral Emission ◽  
Light Output Power ◽  
Polarization Measurements ◽  
Nitride Laser

AbstractThis paper reports the events at NCSU leading up to and including those of June 5, 1997 which produced the first demonstration of a nitride laser diode on silicon carbide – and the very first nitride laser demonstration outside of Japan. All of the laser diode samples tested at NCSU were designed, grown, and fabricated into cleaved cavity test structures at Cree Research. Laser testing at NCSU consisted of spectral emission versus current measurements, light output power versus current (L-I) measurement, and light output polarization measurements versus current. The first successful laser on silicon carbide emitted at 402.6 nm. Subsequently, lasers displaying outputs ranging from 402.6 to 430.2 have been successfully tested at NCSU.

scholarly journals Implementation of Fuzzy logic control based MPPT for Photovoltaic system with Silicon Carbide (SiC) boost DC-DC converter

2021 ◽  
Vol 16 ◽  
pp. 198-215
Author(s):  
A. Bharathi Sankar Ammaiyappan ◽  
R. Seyezhai
Keyword(s):  
Silicon Carbide ◽  
Fuzzy Logic ◽  
Maximum Power ◽  
Photovoltaic System ◽  
Optimum Operating ◽  
Pv System ◽  
Maximum Power Point ◽  
Energy Technologies ◽  
High Voltage Gain ◽  
Power Point

In recent days, photovoltaic (PV) system is the most promising renewable energy technologies and the PV cell has to operate at the optimum operating point to deliver maximum power. In order to obtain maximum power from PV, a maximum power point controller is required. This paper presents the simulation and hardware implementation of fuzzy logic (FL) maximum power point (MPPT) controller with FPGA technology for photovoltaic system. The MPPT algorithm is implemented for a Silicon carbide (SiC) MOSFET based boost DC-DC converter which provides fast switching, low losses and high voltage gain. The proposed MPPT algorithm is implemented on a SPARTAN/FPGA board platform based on the model developed and executed in MATLAB/SIMULINK. The entire system designed and implemented to hardware was successfully tested on a laboratory prototype PV array. The experimental results show the effectiveness and feasibility of the proposed controller and the results were satisfactory.

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