Experimental Investigation on Wafer Polishing of Oxide and Copper Layers

2002 ◽  
Author(s):  
Jhy-Cherng Tsai
Keyword(s):  
Process Parameters ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Back Pressure ◽  
Copper Layer ◽  
Wafer Polishing ◽  
Critical Technology ◽  
And Performance ◽  
Polishing Pressure

Polishing, in particular chemical-mechanical polishing (CMP), is a critical technology for the planarization of wafers. This paper investigates, via experiments, and compares the performance of CMP process with different process parameters for wafers with silicon-dioxide (SiO2) layer and for wafers with copper (Cu) layer. Polishing pressure (P), speed (V), and back pressure (BP) are used as process parameters in this study. Different pads and slurries are also experimented for copper layer as its properties are different from that of conventional oxide layer. Material removal rate (RR) and non-uniformity (NU) are used as indices to measure the performance. Experimental data on oxide layers show RR increases as P and V increase but NU gets worse at the same time. This condition can be improved, for both oxide and copper layers, with suitable BP. Experiments on copper CMP using slurry with abrasives show that RR increases with higher P and V. While NU gets worse with higher P, it can be reduced as V increases using a soft pad. Better NU can be obtained using soft pad though RR is lower in this case. For abrasive-free polishing of copper layer, RR, though relatively lower compared to CMP with regular slurry, is unstable using hard pad despite that NU becomes better at higher P. NU of polished wafer is best at certain pressure but becomes worse at low pressure for hard pad and at high P for soft pad. It is also observed that NU of AFP can be improved with BP and softer pad. Soft pad gives better polishing quality and performance though RR is lower than that using slurry with abrasives.

Study on Chemical Mechanical Polishing Removal Mechanism of Monocrystalline Silicon

2014 ◽  
Vol 538 ◽  
pp. 40-43
Author(s):  
Hong Wei Du ◽  
Yan Ni Chen
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Silicon Wafers ◽  
Monocrystalline Silicon ◽  
Mechanical Polishing ◽  
Removal Mechanism ◽  
Material Removal Mechanism ◽  
Polishing Pressure

In this paper, material removal mechanism of monocrystalline silicon by chemical etching with different solutions were studied to find effective oxidant and stabilizer. Material removal mechanism by mechanical loads was analyzed based on the measured acoustic signals in the scratching processes and the observation on the scratched surfaces of silicon wafers. The chemical mechanical polishing (CMP) processes of monocrystalline silicon wafers were analyzed in detail according to the observation and measurement of the polished surfaces with XRD. The results show that H2O2 is effective oxidant and KOH stabilizer. In a certain range, the higher concentration of oxidant, the higher material removal rate; the higher the polishing liquid PH value, the higher material removal rate. The polishing pressure is an important factor to obtain ultra-smooth surface without damage. Experimental results obtained silicon polishing pressure shall not exceed 42.5kPa.

Study on Process Parameters in CMP Ultra-Thin Stainless Steel Sheet

2014 ◽  
Vol 1027 ◽  
pp. 58-62
Author(s):  
Hai Feng Cheng ◽  
Li Jie Ma ◽  
Jian Guo Yao ◽  
Jian Xiu Su
Keyword(s):  
Stainless Steel ◽  
Process Parameters ◽  
Material Removal ◽  
Stainless Steel Substrate ◽  
Removal Rate ◽  
Steel Substrate ◽  
Rotational Velocity ◽  
Stainless Steel Sheet ◽  
Polishing Pressure ◽  
Abrasive Size

Chemical mechanical polishing (CMP) is the most effective technology to achieve ultra-smooth without damage surface in ultra-precision machining of stainless steel substrate. In this paper, according to the slurry ingredients obtained by former research, the influences of the CMP process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR), have been studied in CMP stainless steel substrate based on the alumina (Al2O3) abrasive. The research results show that the material removal rate increases with the increase of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly and the surface roughness increases with the increase of the abrasive size. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP stainless steel sheet.

Study on Chemical Mechanical Polishing Parameters of 6H-SiC Crystal Substrate Based on Diamond Abrasive

2013 ◽  
Vol 797 ◽  
pp. 261-265 ◽  
Author(s):  
Jian Xiu Su ◽  
Zhu Qing Zhang ◽  
Jian Guo Yao ◽  
Li Jie Ma ◽  
Qi Gao Feng
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Rotational Velocity ◽  
Crystal Substrate ◽  
Polishing Pressure ◽  
Diamond Abrasive ◽  
Abrasive Size

In this paper, according to the slurry ingredients obtained by former research, the influences of the chemical mechanical polishing (CMP) process parameters, such as the rotational velocity of the platen and the carrier, the polishing pressure and the abrasive size on the material removal rate (MRR) and surface roughness Ra have been studied in CMP SiC crystal substrate (0001) C and (0001) Si surface based on the diamond abrasive. The research results show that the material removal rate changes with the change of the abrasive size, the rotational velocity of the platen and the polishing pressure significantly, but the maximum of MRR can be obtained at a certain rotational velocity of platen, abrasive size and polishing pressure. The influence of the abrasive size, the platen velocity, the carrier velocity and the polishing pressure on surface roughness is no significant. Under the same conditions, the MRR of CMP the Si surface is larger than that of the C surface. This study results will provide the reference for optimizing the process parameters and researching the material removal mechanism in CMP SiC crystal substrate.

scholarly journals Effects of Process Parameters on Material Removal in Vibration-Assisted Polishing of Micro-Optic Mold

Micromachines ◽  
2018 ◽  
Vol 9 (7) ◽  
pp. 349 ◽  
Author(s):  
Jiang Guo ◽  
Hirofumi Suzuki
Keyword(s):  
Surface Roughness ◽  
Tool Wear ◽  
Removal Efficiency ◽  
Process Parameters ◽  
Material Removal ◽  
Removal Rate ◽  
Grain Sizes ◽  
Tool Influence Function ◽  
Polishing Pressure ◽  
Lower Material

Process parameter conditions such as vibrating motion, abrasives, pressure and tool wear play an important role in vibration-assisted polishing of micro-optic molds as they strongly affect material removal efficiency and stability. This paper presents an analytical and experimental investigation on the effects of process parameters, aimed at clarifying interrelations between material removal and process parameters which affect polishing quantitatively. The material removal rate (MRR) and surface roughness which represent the polishing characteristics were examined under different vibrating motions, grain sizes of abrasives and polishing pressure. The effects of pressure and tool wear conditions on tool influence function were analyzed. The results showed that 2D vibrating motion generated better surface roughness with higher material removal efficiency while a smaller grain size of abrasives created better surface roughness but lower material removal efficiency. MRR gradually decreases with the increase of polishing pressure when it exceeds 345 kPa, and it was greatly affected by the wear of polisher when wear diameter on the polisher’s head exceeds 300 μm.

Analysis of the Main Parameters in the Chemical Mechanical Polishing Process

2011 ◽  
Vol 317-319 ◽  
pp. 29-33 ◽  
Author(s):  
Xiang Dong Yang ◽  
Xin Wei ◽  
Xiao Zhu Xie ◽  
Zhuo Chen ◽  
Wei Bo Zou
Keyword(s):  
Surface Quality ◽  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Rotation Speed ◽  
Removal Rate ◽  
Surface Damage ◽  
Mechanical Polishing ◽  
Technological Parameters ◽  
Polishing Pressure

This paper studies the chemical mechanical polishing (CMP) of the wafer's material such as stainless steel, monocrystalline silicon etc, and analyzes how the technological parameters’ impact on the final wafer’s surface material removal rate, surface quality and surface damage like the polishing pad’s speed and the wafer speed, polishing pressure and polishing time.The results show that: when the difference between the polishing pad's rotation speed and the wafer's rotation speed is small and their directions are the same , then the material removal rate of the wafer is larger.when the polishing pressure is selected between 5 to 6.5 kPa, the wafer surface's damage is smaller.The polishing time also play a very important role and affect the surface quality and surface damage of the wafer after polishing.

Experimental Investigation of Pressure and Velocity on Chemical Mechanical Planarization

2000 ◽  
Author(s):  
Jhy-Cherng Tsai ◽  
Mingyi Tsai
Keyword(s):  
Experimental Investigation ◽  
Taguchi Method ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Theoretical Models ◽  
Back Pressure ◽  
Wear Model ◽  
Polishing Pressure

Abstract Chemical-mechanical planarization or polishing (CMP) is an emerging process used in surface planarization and polishing for semiconducter wafer with multilevel interconnections. This paper investigates the effects of polishing pressure and velocity on the material removal rate (RR) and the non-uniformity (NU) in the CMP process. Wear models for CMP process from mechanical aspect, including abrasive-based model and flow-based model, are first discussed. Experiments using different polishing pressures, velocities, and back pressures are then designed and conducted based on the Taguchi method. Experimental results showed that RR and NU are consistent with theoretical models in a certain range. Both RR and NU increase as polishing speed increases. As RR and NU also increase with the polishing pressure at low pressure, their values become saturated and then decrease when the pressure exceeds certain value. It further verified that NU can be improved using proper back pressure as predicted by the flow-based wear model.

Modeling of Back Pressure Distribution on the Wafer Loaded in a Multi-Zone Carrier in Chemical Mechanical Polishing

2006 ◽  
Vol 532-533 ◽  
pp. 233-236 ◽  
Author(s):  
Yu Hui Sun ◽  
Ren Ke Kang ◽  
Dong Ming Guo
Keyword(s):  
Pressure Distribution ◽  
Chemical Mechanical Polishing ◽  
Plate Theory ◽  
Removal Rate ◽  
Back Pressure ◽  
Mechanical Polishing ◽  
Factors Affecting ◽  
Uniform Distributions ◽  
Polishing Pressure ◽  
Selection Of

The within-wafer non-uniformity (WIWNU) of material removal rate in chemical mechanical polishing (CMP) is important for IC manufacture. The non-uniform distributions of polishing pressure and the relative speed between the wafer and the polishing pad are main factors affecting the WIWNU. In this paper，based on the contact mechanics and the elastic plate theory, a compensate pressure computing model is presented, in which the effects of kinematic parameters are taken into acount. By modelling and calculating, the desired compensate back pressure distribution is obtained. In the last section the design of a schematic carrier with multi-zone, in which the compensate back pressure can be applied, is presented. The model and the design can be used for providing theoretical guide to the development of CMP equipments and selection of the kinematic variables in CMP process.

Tribological Aspects of Chemical Mechanical Polishing Diamond Surfaces

2011 ◽  
Vol 325 ◽  
pp. 464-469
Author(s):  
Zhu Ji Jin ◽  
Z.W. Yuan ◽  
Q. Li ◽  
K. Wang
Keyword(s):  
Chemical Mechanical Polishing ◽  
Small Area ◽  
Material Removal ◽  
Removal Rate ◽  
Mechanical Energy ◽  
Mechanical Polishing ◽  
Measuring System ◽  
Diamond Surfaces ◽  
Frictional System ◽  
Polishing Pressure

Mechanical energy may initiate and accelerate chemical reaction in chemical mechanical polishing (CMP). To study the effect of mechanical energy on the chemical reactions, a special friction measuring system was designed in this paper. The system could measure the local friction to reduce the error caused by resultant force. The effects of rotational speed, polishing pressure and the concentration of oxidant on friction and material removal rate were investigated. The results showed that the system could accurately measure the friction of small area diamond film in CMP process. The frictional system was in a mixed lubrication state since the value of the friction coefficient located in the range of 0.060~0.065.

Experimental Study of Material Removal Rate for Rotary Curved Surface Workpieces of Si3N4 in Chemical-Mechanical Polishing Using Taguchi Technique

2012 ◽  
Vol 497 ◽  
pp. 273-277
Author(s):  
Lin Lin Wan ◽  
Zhao Hui Deng ◽  
Sheng Chao Li ◽  
Piao Long
Keyword(s):  
Process Parameters ◽  
Material Removal Rate ◽  
Feed Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Removal Rate ◽  
Wheel Speed ◽  
Mechanical Polishing ◽  
Numerical Control ◽  
Slurry Concentration

By applying chemical-mechanical polishing (CMP) technique to high precision processing of rotary surface workpieces of silicon nitride (Si3N4) ceramic, a CMP experimental device was established on a numerical control (NC) jig grinder. The polyurethane wheel and nonwoven cloth wheel was adoped. The CeO2abrasive was applied to configure the water base polishing solution. Using Taguchi robust design method, through S/N ratios and analysis of variance, the influence of slurry concentration, polishing wheel speed and polishing wheel feed rate on material removal rate (MRR) were analyzed. With the increase of polishing wheel speed and polishing wheel feed rate, the MRR decreased. There was a balance concentration leading to the largest MRR. The best process parameters were selected: the slurry concentration of 20%, polishing wheel speed of 6000r/min, polishing wheel feed rate of 2.29mm/min, The result showed the descending order of selected process parameters impacting on MRR was polishing wheel speed, polishing wheel feed rate and slurry concentration.

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