Axiomatic Design of a Chemical Mechanical Polishing (CMP) Wafer Carrier With Zoned Pressure Control

2002 ◽  
Author(s):  
Jason W. Melvin ◽  
Nam P. Suh
Keyword(s):  
Silicon Wafer ◽  
Design Process ◽  
Chemical Mechanical Polishing ◽  
Axiomatic Design ◽  
Normal Pressure ◽  
Pressure Control ◽  
Mechanical Polishing ◽  
Functional Requirement ◽  
Retaining Ring ◽  
Successful Design

Axiomatic Design was used to develop a complete platform for chemical mechanical polishing (CMP) of silicon wafers. A functional requirement of the machine emerging from the axiomatic design process is the control of the wafer-scale polishing uniformity. Mechanisms to maintain control of the uniformity were designed, and integrated into a wafer carrier, which holds the wafer during polishing and applies normal pressure to the polishing interface. The wafer carrier is capable of controlling the pressure in four annular zones on a 200 mm wafer, as well as the pressure of the surrounding retaining ring. Initial testing of the wafer carrier indicates a successful design, offering removal non-uniformity of 1.7% after polishing 5,700 Å of SiO2 from the surface of a silicon wafer.

Modeling and Analyzing on Nonuniformity of Material Removal in Chemical Mechanical Polishing of Silicon Wafer

2004 ◽  
Vol 471-472 ◽  
pp. 26-31 ◽  
Author(s):  
Jian Xiu Su ◽  
Dong Ming Guo ◽  
Ren Ke Kang ◽  
Zhu Ji Jin ◽  
X.J. Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Mechanical Polishing ◽  
Wafer Surface ◽  
Removal Mechanism ◽  
Particle Movement ◽  
Material Removal Mechanism ◽  
The Relationship ◽  
Nonuniform Material

Chemical mechanical polishing (CMP) has already become a mainstream technology in global planarization of wafer, but the mechanism of nonuniform material removal has not been revealed. In this paper, the calculation of particle movement tracks on wafer surface was conducted by the motion relationship between the wafer and the polishing pad on a large-sized single head CMP machine. Based on the distribution of particle tracks on wafer surface, the model for the within-wafer-nonuniformity (WIWNU) of material removal was put forward. By the calculation and analysis, the relationship between the motion variables of the CMP machine and the WIWNU of material removal on wafer surface had been derived. This model can be used not only for predicting the WIWNU, but also for providing theoretical guide to the design of CMP equipment, selecting the motion variables of CMP and further understanding the material removal mechanism in wafer CMP.

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