Miniaturized Thermoelectric Cooler

2002 ◽  
Author(s):  
Luciana W. da Silva ◽  
Massoud Kaviany
Keyword(s):  
Electrical Contact ◽  
Electrical Circuit ◽  
Film Deposition ◽  
Coefficient Of Performance ◽  
Optimum Number ◽  
Thermoelectric Cooler ◽  
Seebeck Coefficients ◽  
Column Type ◽  
Operating Current ◽  
P Type

Vapor-deposited bismuth telluride (n-type) and antimony telluride (p-type) films are used in a micro, column-type, patterned thermoelectric cooler. The optimum number of thermoelectric pairs and operating current are predicted. Such devices contain a number of metal/thermoelectric and metal/elecrical-insulator interfaces. In the analysis, various interfacial resistances (phonon and electron boundary resistances and thermal and electrical contact resistances) have been included. The boundary resistances cause a reduction in the thermal conductivity (desirable) and a reduction in the Seebeck coefficient (undesirable) of the thermoelectric elements. The contact resistances reduce the overall device performance. In the fabrication, the stoichiometry of the deposited thermoelectric films, the patterned film deposition, and the selection of the conducting connectors, are discussed. The thermoelectric films are about 4 μm thick and are deposited on patterned platinum (first trial layer for connectors), which are in turn deposited on oxide coated silicon wafers. The top, suspended connectors that close the electrical circuit are bonded to the surface to be cooled. The non-uniformity of the composition in the thermoelectric films influences the measured Seebeck coefficients. The analysis shows that a coefficient of performance of 0.38 is obtainable for a wireless micro sensor application.

Three-Dimensional Analysis on the Performance of the Thermoelectric Micro-Cooler

2005 ◽  
Author(s):  
Kong Hoon Lee ◽  
Ook Joong Kim
Keyword(s):  
Temperature Difference ◽  
Three Dimensional ◽  
Coefficient Of Performance ◽  
Thermoelectric Cooler ◽  
Small Temperature ◽  
Small Current ◽  
Thermoelectric Element ◽  
Maximum Value ◽  
Column Type ◽  
P Type

Three-dimensional numerical analysis has been carried out using the FEMLAB software package to figure out the performance of the thermoelectric micro-cooler. A small-size and column-type thermoelectric cooler is considered and Bi2Te3 and Sb2Te3 are selected as the n- and p-type thermoelectric materials, respectively. The thickness of the thermoelectric element considered is 5 to 20 μm and the thickness affects the performance of the cooler. The effect of parameters such as the temperature difference, the current, and the thickness of the thermoelectric element on the performance of the cooler has also been investigated. The coefficient of performance (COP) is the primary factor to evaluate the performance of the cooler and the COP varies with the parameters. The COP has the maximum value at a certain current and the value decreases with the temperature difference or the thickness. The predicted results also show that the performance can be improved for thick thermoelectric element at the small temperature difference and small current.

Measured Performance of a Micro Thermoelectric Cooler

Volume 4 ◽  
2004 ◽  
Author(s):  
Luciana W. da Silva ◽  
Massoud Kaviany ◽  
Mehdi Asheghi
Keyword(s):  
Electrical Resistance ◽  
Infrared Camera ◽  
Surface Radiation ◽  
Thermoelectric Cooler ◽  
Cooling Load ◽  
Cooling Performance ◽  
Column Type ◽  
P Type ◽  
Surface Convection ◽  
Substrate Temperatures

The measured performance of a column-type micro thermoelectric cooler, fabricated using vapor deposited thermoelectric films and patterned using photolithography processes, is reported. The columns, made of p-type Sb2Te3 and n-type Bi2Te3 with an average thickness of 4.5 μm, are connected using Cr/Au/Ti/Pt layers at the hot junctions, and Cr/Au layers at the cold junctions. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films, which were deposited with a substrate temperature of 130°C, are −74 μV/K and 3.6×10−5Ω-m (n-type), and 97 μV/K and 3.1×10−5Ω-m (p-type). The cooling performance of devices with 60 thermoelectric pairs and a column width of 40 μm is evaluated under a minimal cooling load (thermobuoyant surface convection and surface radiation). The temperatures of the cold and hot surfaces are obtained with an infrared camera. The average cooling achieved is about 1 K. The measured overall electrical resistance ranges from 51 to 58 Ω. Current challenges include the reduction of the column width, implementation of higher substrate temperatures for optimum thermoelectric properties, and improvements of the top connector fabrication.

Sizing of Pellets in Thermoelectric Modules (TEMs)

2005 ◽  
Author(s):  
Marc Hodes
Keyword(s):  
Electrical Contact ◽  
Coefficient Of Performance ◽  
Total Power ◽  
Operating Voltage ◽  
Electrical Contact Resistance ◽  
Cross Sectional ◽  
Thermoelectric Modules ◽  
Total Power Consumption ◽  
Generation Mode ◽  
Operating Current

Sizing the height and cross sectional area of the pellets within thermoelectric modules (TEMs) used to cool, heat and generate power is necessary to optimize their efficiency and/or performance. Here the heat flux that a TEM can accommodate, its coefficient of performance, and its operating current and voltage in refrigeration mode are provided as a function of pellet geometry. This enables designers to, for example, size pellets to refrigerate a load such that the total power consumption of a TEM and a power supply (that converts available voltage to that required by the TEM) is minimized. In generation mode, power output, conversion efficiency and operating voltage and current are provided as a function of pellet geometry and the electrical resistance of a load connected to a TEM. Finally, the effects of electrical contact resistance at the pellet interconnects on the aforementioned parameters are addressed.

scholarly journals Band degeneracy enhanced thermoelectric performance in layered oxyselenides by first-principles calculations

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Ning Wang ◽  
Menglu Li ◽  
Haiyan Xiao ◽  
Zhibin Gao ◽  
Zijiang Liu ◽  
...  
Keyword(s):  
Density Functional ◽  
Transport Theory ◽  
Relaxation Times ◽  
Wide Band ◽  
Type Systems ◽  
Model Systems ◽  
Boltzmann Transport ◽  
Seebeck Coefficients ◽  
Boltzmann Transport Theory ◽  
P Type

AbstractBand degeneracy is effective in optimizing the power factors of thermoelectric (TE) materials by enhancing the Seebeck coefficients. In this study, we demonstrate this effect in model systems of layered oxyselenide family by the density functional theory (DFT) combined with semi-classical Boltzmann transport theory. TE transport performance of layered LaCuOSe and BiCuOSe are fully compared. The results show that due to the larger electrical conductivities caused by longer electron relaxation times, the n-type systems show better TE performance than p-type systems for both LaCuOSe and BiCuOSe. Besides, the conduction band degeneracy of LaCuOSe leads to a larger Seebeck coefficient and a higher optimal carrier concentration than n-type BiCuOSe, and thus a higher power factor. The optimal figure of merit (ZT) value of 1.46 for n-type LaCuOSe is 22% larger than that of 1.2 for n-type BiCuOSe. This study highlights the potential of wide band gap material LaCuOSe for highly efficient TE applications, and demonstrates that inducing band degeneracy by cations substitution is an effective way to enhance the TE performance of layered oxyselenides.

scholarly journals Strain Effects on the Electronic and Thermoelectric Properties of n(PbTe)-m(Bi2Te3) System Compounds

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4086
Author(s):  
Weiliang Ma ◽  
Marie-Christine Record ◽  
Jing Tian ◽  
Pascal Boulet
Keyword(s):  
Density Functional ◽  
Lattice Thermal Conductivity ◽  
Compressive Strain ◽  
Van Der Waals Interactions ◽  
Functional Theory ◽  
Band Engineering ◽  
Seebeck Coefficients ◽  
The Density Functional Theory ◽  
P Type ◽  
Narrow Band Gap Semiconductors

Owing to their low lattice thermal conductivity, many compounds of the n(PbTe)-m(Bi2Te3) homologous series have been reported in the literature with thermoelectric (TE) properties that still need improvement. For this purpose, in this work, we have implemented the band engineering approach by applying biaxial tensile and compressive strains using the density functional theory (DFT) on various compounds of this series, namely Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5. All the fully relaxed Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5 compounds are narrow band-gap semiconductors. When applying strains, a semiconductor-to-metal transition occurs for all the compounds. Within the range of open-gap, the electrical conductivity decreases as the compressive strain increases. We also found that compressive strains cause larger Seebeck coefficients than tensile ones, with the maximum Seebeck coefficient being located at −2%, −6%, −3% and 0% strain for p-type Bi2Te3, PbBi2Te4, PbBi4Te7 and Pb2Bi2Te5, respectively. The use of the quantum theory of atoms in molecules (QTAIM) as a complementary tool has shown that the van der Waals interactions located between the structure slabs evolve with strains as well as the topological properties of Bi2Te3 and PbBi2Te4. This study shows that the TE performance of the n(PbTe)-m(Bi2Te3) compounds is modified under strains.

Study on Phases and Thermoelectric Properties of Bulk Fe4Sb12 and Fe3CoSb12 Prepared by Milling and Sintering

2011 ◽  
Vol 121-126 ◽  
pp. 1526-1529
Author(s):  
Ke Gao Liu ◽  
Jing Li
Keyword(s):  
Thermoelectric Properties ◽  
Impurity Phase ◽  
Semiconductor Materials ◽  
Thermal Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Seebeck Coefficients ◽  
Maximum Value ◽  
Type Semiconductor ◽  
P Type

Bulk Fe4Sb12 and Fe3CoSb12 were prepared by sintering at 600 °C. The phases of samples were analyzed by X-ray diffraction and their thermoelectric properties were tested by electric constant instrument and laser thermal constant instrument. Experimental results show that, the major phases of bulk samples are skutterudite with impurity phase FeSb2. The electric resistivities of the samples increase with temperature rising at 100~500 °C. The bulk samples are P-type semiconductor materials. The Seebeck coefficients of the bulk Fe4Sb12 are higher than those of bulk Fe3CoSb12 samples at 100~200 °C but lower at 300~500 °C. The power factor of the bulk Fe4Sb12 samples decreases with temperature rising while that of bulk Fe3CoSb12 samples increases with temperature rising at 100~500 °C. The thermal conductivities of the bulk Fe4Sb12 samples are relatively higher than those of and Fe3CoSb12, which maximum value is up to 0.0974 Wm-1K-1. The ZT value of bulk Fe3CoSb12 increases with temperature rising at 100~500 °C, the maximum value is up to 0.031.The ZT values of the bulk Fe4Sb12 samples are higher than those of bulk Fe3CoSb12 at 100~300 °C while lower at 400~500 °C.

scholarly journals Pressure Sensor with New Electrical Circuit Utilizing Bipolar Junction Transistor

2021 ◽  
Author(s):  
Mikhail
Keyword(s):  
Theoretical Model ◽  
Pressure Sensor ◽  
High Sensitivity ◽  
Wheatstone Bridge ◽  
Electrical Circuit ◽  
Sensor Chip ◽  
Chip Size ◽  
Junction Transistor ◽  
Developed Pressure ◽  
P Type

High sensitivity MEMS pressure sensor chip for different ranges (1 to 60 kPa) utilizing the novel electrical circuit of piezosensitive differential amplifier with negative feedback loop (PDA-NFL) is developed. Pressure sensor chip PDA-NFL utilizes two bipolar-junction transistors (BJT) with vertical n-p-n type structure (V-NPN) and eight piezoresistors (p-type). Both theoretical model of sensor response to pressure and temperature and experimental data are presented. Data confirms the applicability of theoretical model. Introduction of the amplifier allows for decreasing chip size while keeping the same sensitivity as a chip with classic Wheatstone bridge circuit.

Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition

2020 ◽  
Vol 20 (8) ◽  
pp. 4884-4891
Author(s):  
Rawiwan Chaleawpong ◽  
Nathaporn Promros ◽  
Peerasil Charoenyuenyao ◽  
Phongsaphak Sittimart ◽  
Satoshi Takeichi ◽  
...  
Keyword(s):  
Plasma Deposition ◽  
Electrical Circuit ◽  
Circuit Model ◽  
Arc Plasma ◽  
Equivalent Electrical Circuit ◽  
Type Silicon ◽  
Ultrananocrystalline Diamond ◽  
Electrical Circuit Model ◽  
Equivalent Electrical Circuit Model ◽  
P Type

Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature in order to calculate the requisite junction parameters using the Cheung and Norde approaches. For the calculation based on the Cheung approach, the series resistance (Rs), ideality factor (n) and barrier height (Φb) were 4.58 kΩ, 2.82 and 0.75 eV, respectively. The values of Rs and Φb were in agreement with those calculated using the Norde approach. Their characteristics for alternative current impedance at different frequency values were measured and analyzed as a function of the voltage (V) values ranging from 0 V to 0.5 V. Appearance of the real (Z′) and imaginary (Z″) characteristics for all V values presented single semicircles. The centers of the semicircular curves were below the Z′ axis and the diameter of the semicircles decreased with increments of the V value. The proper equivalent electrical circuit model for the manufactured heterojunction behavior was comprised of Rs combined with the parallel circuit of resistance and constant phase element.

Spray-on thermoelectric energy harvester

MRS Advances ◽  
2018 ◽  
Vol 4 (15) ◽  
pp. 851-855 ◽  
Author(s):  
Robert E. Peale ◽  
Seth Calhoun ◽  
Nagendra Dhakal ◽  
Isaiah O. Oladeji ◽  
Francisco J. González
Keyword(s):  
Thin Films ◽  
Power Generation ◽  
Energy Harvester ◽  
Waste Heat ◽  
Spray Deposition ◽  
Electrical Energy ◽  
Seebeck Coefficients ◽  
Thermoelectric Energy ◽  
P Type ◽  
Energy From Waste

AbstractThermoelectric (TE) thin films have promise for harvesting electrical energy from waste heat. We demonstrate TE materials and thermocouples deposited by aqueous spray deposition on glass. The n-type material was CdO doped with Mn and Sn. Two p-type materials were investigated, namely PbS with co-growth of CdS and doped with Na and Na2CoO4. Seebeck coefficients, resistivity, and power generation for thermocouples were characterized.

Thermoelectric properties control of Half-Heusler compounds by lattice defects and interfaces introduced based on the close relationship with Heusler compounds

2015 ◽  
Vol 1760 ◽  
Author(s):  
Yoshisato Kimura ◽  
Yaw-Wang Chai ◽  
Toshinori Oniki ◽  
Takahiko Itagaki ◽  
Shinya Otani
Keyword(s):  
Seebeck Coefficient ◽  
Lattice Defects ◽  
Heusler Compounds ◽  
Nano Structure ◽  
Heusler Phase ◽  
Site Occupation ◽  
Seebeck Coefficients ◽  
Close Relationship ◽  
Vacancy Site ◽  
P Type

ABSTRACTHalf-Heusler MNiSn (M=Ti, Zr, Hf) compounds are well-known, excellent n-type thermoelectric materials. The n-type Seebeck coefficients of ZrNiSn are reduced because of the precipitation of the metallic Heusler ZrNi2Sn phase. An excellent n-type Seebeck coefficient can be converted to p-type based on the vacancy site occupation by the solute Co atoms in the half-Heusler TiNiSn phase as well as ZrNiSn. The Heusler phase precipitates, including their precursor nano-structure in the half-Heusler matrix and the vacancy site occupation of the half-Heusler phase, are regarded as lattice defects based on the crystallographically and thermodynamically close relationship between half-Heusler and Heusler phases.

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