Automatic Defects Measurement on Silicon Wafer Surface by Laser Scattered Defect Pattern

2000 ◽  
Author(s):  
Satoru Takahashi ◽  
Takashi Miyoshi ◽  
Yasuhiro Takaya
Keyword(s):  
Silicon Wafer ◽  
Measurement Method ◽  
Optical Measurement ◽  
Experimental System ◽  
Wafer Surface ◽  
Objective Lens ◽  
Two Stage ◽  
Process Measurement ◽  
Defect Pattern ◽  
Wafer Surfaces

Abstract A new optical measurement method for evaluating the defects on silicon wafer surfaces quantitatively, applicable to in-process measurement, is presented. The experimental system for measuring the defects consists of a Fourier transform optical system using a high-power objective lens. In order to verify the feasibility of the applications of this method to automatic in-process measurement, a two-stage measurement for detecting and evaluating small particles, which are typical defects on silicon wafer surfaces, was carried out. The results showed that the proposed two-stage measurement method is effective for measuring small defects in the sub-micro meter scale size.

A Boost-Up Method of MEMS-Bulk-Micromachining towards C-MEMS Fabrication for Sensing and Manipulating Bioparticles

2011 ◽  
Vol 316-317 ◽  
pp. 59-67
Author(s):  
M. Rizwan Malik ◽  
Tie Lin Shi ◽  
Zi Rong Tang ◽  
M. Haseeb
Keyword(s):  
Silicon Wafer ◽  
Three Dimensional ◽  
Wafer Surface ◽  
Main Concern ◽  
Mems Fabrication ◽  
Technological Field ◽  
Broad Concept ◽  
Silicon Cantilever ◽  
Wafer Surfaces ◽  
Comprehensive Study

Much of the recent ongoing advanced research into the quest for improved etching techniques has brought forth a broad concept for the fabrication of micro/nano-electromechanical systems (MEMS/NEMS) having high accuracy, precision, efficiency, compatibility and through-put of metallic- as well as carbon-composition structural phases. This in turn leads towards a thorough understanding of the sensing, trapping, separating, controlling, positioning, directing, concentrating and manipulating of micro-nano-sized particles - predominantly biological particles - in the emerging MEMS/NEMS technological field. This paper focuses its attention on the easiest means of wet-etching {100}-type silicon wafer surfaces by guiding the choice of [<100> or <010>] orientation (at 45° to the normal orientation). This anisotropic etching is performed in KOH solution. Here, consideration is not concerned to a large extent with process parameters as in anodic oxidation, an intensely doped boron etching stops and silicon wafer surface back-etching. The main concern of the present practical application route involves a passivating material (silicon dioxide, SiO2) and two masking stages (for a two-step etching process). As a example of this method, silicon cantilever beams having vertical edges are produced. It is concluded that the method presented will be helpful in the comprehensive study of resonators, pressure/temperature sensors, three-dimensional carbon micro-electrodes, actuators and accelerometers for bioparticle applications.

A Displacement Measurement Method by Laser-Beam Scanning for Mapping the Interior Geometry of Pipes

1994 ◽  
Vol 116 (2) ◽  
pp. 188-192
Author(s):  
M. Mizunuma ◽  
S. Ogawa ◽  
C. Nishimura ◽  
H. Kuwano
Keyword(s):  
Laser Beam ◽  
Radial Displacement ◽  
Measurement Method ◽  
Optical Measurement ◽  
Experimental System ◽  
High Accuracy ◽  
Noncontact Mapping ◽  
Mapping System ◽  
Laser Beam Scanning ◽  
Automated Data Acquisition

This paper proposes a displacement measuring technique for detailed noncontact mapping of the interior geometry of pipes. The technique, which is based on optical measurement using triangulation, employs a laser-beam scanner to measure radial displacement. To achieve high precision, three different algorithms for calculating the displacement from sensor output are compared in experiments. One of them, which calculates the displacement by using several direction-dependent characteristic curves, gives high accuracy. The accuracy of our experimental system is ±0.2 mm for radii between 33 and 42 mm. A mapping system using this technique with automated data-acquisition and 3D rendering of the interior is also described. Its effectiveness is illustrated by the experimental results.

Iron Deposition From SC-1 on Silicon Wafer Surfaces

1995 ◽  
Vol 386 ◽  
Author(s):  
S. Dhanda ◽  
C. R. Helms ◽  
P. Gupta ◽  
B. B. Triplett ◽  
M. Tran
Keyword(s):  
Oxide Film ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Room Temperature ◽  
Native Oxide ◽  
Wafer Surface ◽  
Initial Surface ◽  
Thermal Oxide ◽  
Wide Range ◽  
Wafer Surfaces

ABSTRACTThis work examines the extent of the deposition of iron on the wafer from (iron) contaminated SC-1 solutions on silicon wafer surfaces, models this effect, and also predicts the chemical state of the iron thus deposited on the wafer surface. The deposition of iron from SC-1 on three different wafer surface terminations was studied. The surfaces were characterized by: (i) the presence of ∼10 Å of native oxide, (ii) by relatively little native oxide and (iii) by a thick thermal oxide. Experiments were performed at room temperature using a 1:1:5 SC-1 (NH4 OH-H2O2-H2O) solution, and also at 80°C with a more dilute composition (0.25:0.5:5). We found that irrespective of the initial surface termination, the amount of iron deposited on the silicon surface from SC-1 exhibited remarkably little deviation over a wide range of spiking levels, leading to the conclusion that in all cases an initial rapid oxidation of the silicon took place, followed by the preferential oxidation of the iron and its inclusion as the oxide into the oxide film. Finally, the model developed predicts that lower temperatures and more concentrated chemistries are more effective in keeping the iron in solution.

scholarly journals The use of atomic force microscopy to assess the quality of cleaning and tribometric properties of a silicon wafer surface

2019 ◽  
Vol 43 (3) ◽  
pp. 507-511
Author(s):  
I.D. Mikheev ◽  
F.Kh. Vakhitov
Keyword(s):  
Silicon Wafer ◽  
Relative Magnitude ◽  
Wafer Surface ◽  
Friction Forces ◽  
Small Areas ◽  
Force Microscopy ◽  
Atomic Force ◽  
Wafer Surfaces ◽  
Adhesive Forces

Differences in the values of adhesive forces of interaction between the probe tip of an atomic force microscope and the cleaned surfaces of silicon wafers during their treatment with isopropyl alcohol and distilled water were investigated experimentally. It was shown that the presence of water molecules on the surface of the substrates leads to a significant (approximately 5 times) change in the value of these forces. It was found that the use of AFM allows the relative magnitude of friction forces in small areas of silicon wafer surfaces to be estimated.

Application of Synchrotron Radiation to Analysis of Both Contamination and Structure of Silicon Surfaces and Interfaces

1998 ◽  
Vol 4 (S2) ◽  
pp. 346-347
Author(s):  
P. Pianetta ◽  
S. Brennan
Keyword(s):  
Synchrotron Radiation ◽  
Integrated Circuits ◽  
Silicon Wafer ◽  
Silicon Surfaces ◽  
Wafer Surface ◽  
X Ray ◽  
Enhanced Diffusion ◽  
Surfaces And Interfaces ◽  
X Ray Scattering ◽  
Wafer Surfaces

Synchrotron Radiation has become an important tool for the analysis of silicon surfaces in both fundamental and applied problems with techniques ranging from x-ray scattering to fluorescence. Applications that have been studied include the analysis of ultra-low levels of impurities on silicon wafer surfaces using the total external x-ray fluorescence technique (TXRF), measurement of silicon wafer surface roughness using crystal truncation rod scattering, measurement of the stress and defects associated with isolation trenches used in the fabrication of integrated circuits, and the study of transient enhanced diffusion in implanted silicon using x-ray diffuse scattering.As the dimensions of integrated circuits become smaller and smaller, the thickness of the gate oxide is being reduced to a level where it has become necessary to control the process to virtually atomic levels. With oxide thicknesses less than 100 Angstroms, surface impurities can have deleterious affects on the oxide properties.

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