Laser Induced Implantation Doping of Glass Substrates

Author(s):  
Sepehr Sadeh ◽  
Kunal Mitra

Lasers are widely used as high-accuracy tools for material processing. Different types of lasers such as CO2, Nd:YAG, and excimer lasers are used in different operating modes such as continuous wave, pulsed or Q-switched. Volumes of materials and their composition, structure, and properties can be controlled or modified by varying laser pulses. In this research, by using laser as a material processing tool, an experimental method was developed for laser induced implantation doping of glass substrates with conductive metals. Experiments were performed on glass samples using Q-switched Nd:YAG lasers. Gold, silver, and copper were used as conductive dopant materials. Initial experiments were performed using nickel as a catalyst. Effect of the catalyst on the composition of implanted dopant material was observed using Large Area Rapid Imaging Analytical Tool (LARIAT). Through further experiment, the effect of several parameters such as beam fluence, scanning speed, pulse repetition frequency, wavelength, substrate temperature, dopant material, and glass substrate material on the morphology of heat affected zones were investigated by optical microscopy (OM). Depth of penetration in doped glass samples was measured for different substrate temperatures by means of a laser displacement sensor. The effect of beam fluence and glass substrate thickness on depth of penetration was investigated. The results of these non-destructive measurements were verified using scanning electron microscopy (SEM). Based on optical observations, morphological characteristics of the heat affected zone were assessed in order to obtain the best parameter settings in different experiments. These settings were defined by factors such as the number and size of cracks in glass substrates, and the quality of the distribution of dopant metal over the scanned pattern. While using a catalyst with substrates at room temperature, the best parameter settings were obtained at wavelength of 532 nm, pulse repetition frequency of 6 kHz, beam fluence of 0.36 J/cm2, and scanning speed of 0.10 m/s. By removing the catalyst, these settings were changed to 355 nm, 10 kHz, 0.09 J/cm2, and 0.01 m/s for gold sputtered soda-lime glass substrate at 500 °C. For beam fluence values ranging from 0.06 J/cm2 to 0.38 J/cm2, the obtained values for average depth of penetration were 255 μm and 187 μm in 1 mm and 3 mm thick soda-lime glass substrates respectively. Further development of this implantation method could lead to implantation of electronic circuits in transparent substrates, inspiring the evolution of transparent electronic devices such as transparent smart phones, smart windows and displays, and lighting products in the future.

1997 ◽  
Vol 471 ◽  
Author(s):  
Dawne M. Moffatt-Fairbanks ◽  
David L. Tennent

ABSTRACTThe glass substrate plays a crucial role in the successful performance of advanced flat panel displays (FPDs). These FPD technologies include active-matrix liquid crystal displays (AMLCD) and Plasma Displays (PDP). Although these displays are different in the way in which they operate, there are several common substrate requirements, all of which are determined by the process for making the entire display. These include issues relating to substrate size, thermal shrinkage, high temperature stability, and substrate surface quality.While AMLCD technology is moving toward larger sizes, PDPs are currently large size displays, requiring large glass substrates. The primary issue in using larger substrates is minimizing distortion of the glass during high temperature processes, both viscous sag and shrinkage. These are related to the high temperature thermal stability which, in turn, is largely determined by the strain point and thermal history of the substrate. Finally, thickness uniformity and surface flaws are critical to the performance of the final display.Coming's Code 1737 glass substrate meets the requirements for AMLCDs and has become the industry standard. Corning/Saint-Gobain Code CS25 glass is a new glass that has significant benefits over soda-lime glass for PDP applications. This paper will discuss these two glasses in terms of the above-mentioned issues.


Chemosensors ◽  
2020 ◽  
Vol 8 (2) ◽  
pp. 40
Author(s):  
Victor V. Petrov ◽  
Ekaterina M. Bayan ◽  
Soslan A. Khubezhov ◽  
Yuri N. Varzarev ◽  
Maria G. Volkova

ZnO–SnO2 films with a thickness of up to 120 nm have been prepared on glass substrates by pyrolysis at 550 °C of three spin-coated organic precursors films. Films of four compositions were obtained on glass substrates. The prepared films were characterized by SEM, XRD, and XPS analysis. Electrophysical studies have shown that the activation energy of the temperature conductivity for all films is equal to 0.75 eV. While the gas-sensitive characteristics by CO treatment in low concentrations at a temperature of 200–300 °C was studied, their rapid degradation was found. Studies using the XPS method have shown that ZnO–SnO2 films contain sodium, which is diffused from the soda-lime glass substrate during the film formation. Studies of XPS spectra after CO treatment have shown that the film surface is almost 50% composed of adsorbed water molecules and OH groups. OH groups are part of the sodium, tin, and zinc hydroxides formed on the surface. In addition, zinc hydrocarbonates are formed on the surface of the films. The detected insoluble compounds lead to the degradation of gas-sensitive properties of ZnO–SnO2 films.


2004 ◽  
Vol 836 ◽  
Author(s):  
Ki-Hyun Kim ◽  
Young-Gab Chun ◽  
Byung-Ok Park ◽  
Kyung-Hoon Yoon

ABSTRACTCIGS nanoparticles for the CIGS absorber layer have been synthesized by low temperature colloidal routes. The CIGS absorber layers for solar cells have been prepared by spray deposition of CIGS nanoparticle precursors (∼20 nm) in glove box under inert atmosphere. An automatic air atomizing nozzle spray system with computer controlled X-Y step motor system was used to spray. The nanoparticle precursor CIGS film was deposited onto molybdenum-coated soda-lime glass substrates (2.5 cm × 5.0 cm) heated to 160°C. The film thickness in the range of 2 μm ± 0.3 μm was attained by spraying of 3 mM colloidal over an area of 12.5 cm2. The coalescence between particles was observed in the CIGS absorber layer under post-treatment of over 550 °C. This is related to the reactive sintering among the nanoparticles to reduce surface energy of the particles. The CuxSe thin film, formed on Mo film by evaporation, improved adhesion between CIGS and Mo layers and enhanced the coalescence of the particles in the CIGS layer. These are closely related to the fluxing of Cu2Se phase which has relatively low melting temperature. The CdS buffer layer was deposited on the CIGS/Mo/soda-lime glass substrate by chemical bath deposition. The CIGS nanoparticles-based absorber layers were characterized by using energy dispersive spectroscopy (EDS), x-ray diffraction (XRD) and high-resolution scanning electron microscopy (HRSEM).


2005 ◽  
Vol 865 ◽  
Author(s):  
P. D. Paulson ◽  
S. H. Stephens ◽  
W. N. Shafarman

AbstractVariable angle spectroscopic ellipsometry has been used to characterize Cu(InGa)Se2 thin films as a function of relative Ga content and to study the effects of Cu off-stoichiometry. Uniform Cu(InGa)Se2 films were deposited on Mo-coated soda lime glass substrates by elemental evaporation with a wide range of relative Cu and Ga concentrations. Optical constants of Cu(InGa)Se2 were determined over the energy range of 0.75–C4.6 eV for films with 0 ≤ Ga/(In+Ga) ≤ 1 and used to determine electronic transition energies. Further, the changes in the optical constants and electronic transitions as a function of Cu off-stoichiometry were determined in Cu-In-Ga-Se films with Cu atomic concentration varying from 10 to 25 % and Ga/(In+Ga) = 0.3. Films with Cu in the range 16–24 % are expected to contain 2 phases so an effective medium approximation is used to model the data. This enables the relative volume fractions of the two phases, and hence composition, to be determined. Two distinctive features are observed in the optical spectra as the Cu concentration decreases. First, the fundamental bandgaps are shifted to higher energies. Second, the critical point features at higher energies become broader suggesting degradation of the crystalline quality of the material.


2011 ◽  
Vol 22 (20) ◽  
pp. 205602 ◽  
Author(s):  
Young Joon Hong ◽  
Yong-Jin Kim ◽  
Jong-Myeong Jeon ◽  
Miyoung Kim ◽  
Jun Hee Choi ◽  
...  

2014 ◽  
Vol 1670 ◽  
Author(s):  
Antony Jan ◽  
Yesheng Yee ◽  
Bruce M. Clemens

ABSTRACTThin-film absorber layers for photovoltaics have attracted much attention for their potential for low cost per unit power generation, due both to reduced material consumption and to higher tolerance for defects such as grain boundaries. Cu2ZnGeSe4 (CZGSe) comprises one such material system which has a near-optimal direct band gap of 1.6 eV for absorption of the solar spectrum, and is made primarily from earth-abundant elements.CZGSe metallic precursor films were sputtered from Cu, Zn, and Ge onto Mo-coated soda lime glass substrates. These were then selenized in a two-zone close-space sublimation furnace using elemental Se as the source, with temperatures in the range of 400 to 500 C, and at a variety of background pressures. Films approximately 1-1.5 µm thick were obtained with the expected stannite crystal structure.Next, Cu2ZnSnSe4 (CZTSe), which has a direct band gap of 1.0 eV, was prepared in a similar manner and combined with CZGSe as either compositionally homogeneous or layered absorbers. The compositional uniformity of selenide absorbers made by selenizing compositionally homogeneous Cu-Zn-Ge-Sn precursor layers was determined and the band gap as a function of composition was investigated in order to demonstrate that the band gap is tuneable for a range of compositions. For layered Cu-Zn-Ge/Cu-Zn-Sn precursor films, the composition profile was measured before and after selenization to assess the stability of the layered structure, and its applicability for forming a band-gap-graded device for improved current collection.


2014 ◽  
Vol 63 ◽  
pp. 11-18 ◽  
Author(s):  
Daniel Nieto ◽  
Tamara Delgado ◽  
María Teresa Flores-Arias

2013 ◽  
Vol 716 ◽  
pp. 325-327
Author(s):  
Xiao Yan Dai ◽  
Cheng Wu Shi ◽  
Yan Ru Zhang ◽  
Min Yao

In this paper, CdTe thin films were deposited on soda-lime glass substrates using CdTe powder as a source by close-spaced sublimation at higher source temperature of 700°C. The influence of the deposition time and the source-substrate distance on the chemical composition, crystal phase, surface morphology and optical band gap of CdTe thin films was systemically investigated by energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscope and the ultraviolet-visible-near infrared absorption spectra, respectively. At the deposition time of 60 min and the source-substrate distance of 5 mm, the CdTe thin films had pyramid appearance with the grain size of 15 μm.


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