Dual Pump Femtosecond Laser Induced Plasma

2008 ◽  
Author(s):  
Meg Mahat ◽  
Tae Y. Choi ◽  
Nasrasadani Seifolah ◽  
Arup Neogi
Keyword(s):  
Emission Intensity ◽  
Short Pulse ◽  
Single Pulse ◽  
Atomic Emission ◽  
Dielectric Materials ◽  
Pulse Excitation ◽  
Time Resolved ◽  
Breakdown Spectroscopy ◽  
Short Pulse Laser ◽  
Ultra Short Pulse

Laser-induced breakdown spectroscopy (LIBS) can provide a noncontact way of inspecting a specimen including distinct signature of atomic composition of the sample. Ultra-short pulse laser enables characterization of any materials by utilizing the multiphoton process, which is a dominant carrier generation mechanism for dielectric materials. Additionally, femtosecond LIBS yields low background and better defined atomic lines than the nanosecond LIBS. We have performed a time-resolved emission intensity measurement for an iron oxide (Fe3O4, magnetite). The emission intensity has the peak value at 100 ps time delay, signifying that the succeeding pump beam is interacting with the plasma generated in the vicinity of the sample by the preceding beam. The dual pulses significantly enhance the atomic emission as compared to single pulse excitation and enables ultrafast time-resolved spectroscopy.

Energy Dependence of Emission Intensity and Temperature in a LIBS Plasma Using Femtosecond Excitation

2001 ◽  
Vol 55 (3) ◽  
pp. 286-291 ◽  
Author(s):  
Kristine L. Eland ◽  
Dimitra N. Stratis ◽  
David M. Gold ◽  
Scott R. Goode ◽  
S. Michael Angel
Keyword(s):  
Emission Intensity ◽  
Laser Energy ◽  
Short Pulse ◽  
Line Emission ◽  
Plasma Temperature ◽  
Background Intensity ◽  
Pulse Excitation ◽  
Intensity Increase ◽  
Breakdown Spectroscopy ◽  
Laser Induced Breakdown

In this paper, we investigate the effect of laser energy on laser-induced breakdown emission intensity and average temperature in a short-pulse plasma generated by using 140 fs laser excitation. Both line emission and continuum background intensity and plasma temperature decrease very rapidly after excitation compared to the more conventional nanosecond pulse excitation. Both emission intensity and plasma temperature increase with increasing laser energy. However, the intensity increase appears to be mostly related to the amount of material ablated. Also, nongated laser-induced breakdown spectroscopy (LIBS) is demonstrated using a high-pulse (1 kHz) pulse repetition rate.

Silicon Thinning using Ultra-Short Pulse Laser Ablation

2004 ◽  
Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Sample Preparation ◽  
Pulse Laser ◽  
Pulse Laser Ablation ◽  
Short Pulse ◽  
Special Care ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.

Characterization of Amethysts from Sukamara, Central Kalimantan, Using Laser-Induced Breakdown Spectroscopy (LIBS)

2020 ◽  
Vol 1 (2) ◽  
pp. 5-8
Author(s):  
Komang Gde Suastika, Heri Suyanto, Gunarjo, Sadiana, Darmaji
Keyword(s):  
Emission Intensity ◽  
Laser Energy ◽  
Emission Spectra ◽  
Atomic Emission ◽  
Laser Induced Breakdown Spectroscopy ◽  
Chemical Formula ◽  
Central Kalimantan ◽  
Breakdown Spectroscopy ◽  
Laser Induced Breakdown

Abstract - Laser-Induced Breakdown Spectroscopy (LIBS) is one method of atomic emission spectroscopy using laser ablation as an energy source. This method is used to characterize the type of amethysts that originally come from Sukamara, Central Kalimantan. The result of amethyst characterization can be used as a reference for claiming the natural wealth of the amethyst. The amethyst samples are directly taken from the amethyst mining field in the District Gem Amethyst and consist of four color variations: white, black, yellow, and purple. These samples were analyzed by LIBS, using laser energy of 120 mJ, delay time detection of 2 μs and accumulation of 3, with and without cleaning. The purpose of this study is to determine emission spectra characteristics, contained elements, and physical characteristics of each amethyst sample. The spectra show that the amethyst samples contain some elements such as Al, Ca, K, Fe, Gd, Ba, Si, Be, H, O, N, Cl and Pu with various emission intensities. The value of emission intensity corresponds to concentration of element in the sample. Hence, the characteristics of the amethysts are based on their concentration value. The element with the highest concentration in all samples is Si, which is related to the chemical formula of SiO2. The element with the lowest concentration in all samples is Ca that is found in black and yellow amethysts. The emission intensity of Fe element can distinguish between white, purple, and yellow amethyst. If Fe emission intensity is very low, it indicates yellow sample. Thus, we may conclude that LIBS is a method that can be used to characterize the amethyst samples.Key words: amethyst, impurity, laser-induced, breakdown spectroscopy, characteristic, gemstones

The study of time dependent, broadband X-ray emission from ultra-short pulse laser produced plasmas

1994 ◽  
Author(s):  
Ronnie Shepherd ◽  
Rex Booth ◽  
Dwight Price ◽  
Rosemary Walling ◽  
Richard More ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Short Pulse ◽  
Time Dependent ◽  
X Ray ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

Ultra-short pulse laser safety - a challenge to materials science

2005 ◽  
Author(s):  
Andreas Hertwig ◽  
Sven Martin ◽  
Wolfgang Kautek ◽  
Jörg Krüger
Keyword(s):  
Pulse Laser ◽  
Materials Science ◽  
Short Pulse ◽  
Laser Safety ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

Optical Study of Localized and Delocalized States in GaAsN/GaAs

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Rapid Thermal Annealing ◽  
Short Pulse ◽  
Selective Excitation ◽  
Excitation Power ◽  
Pulse Excitation ◽  
Optical Study ◽  
Time Resolved ◽  
Exciton Localization ◽  
Time Resolved Photoluminescence

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

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