Effects of Geometrical Parameters in the DS Method for the Growth of Large Sized Polycrystal Silicon

2007 ◽  
Author(s):  
Jung-Hoon Hwang ◽  
Youn-Jea Kim ◽  
Joong-Won Shur ◽  
Dae-Ho Yoon
Keyword(s):  
Directional Solidification ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Thermal Characteristics ◽  
Geometrical Parameters ◽  
Dynamics Model ◽  
Heat Transfer Characteristics ◽  
Short Cycle ◽  
Market Growth ◽  
Solidification Processes

Polycrystalline silicon (Si) wafers share more than 60% of the photovoltaic market due to its cost advantage compared to the mono-crystalline silicon wafers. Several solidification processes have been developed by industries, including casting, heat exchanger method and electromagnetic casting. However, the market growth using mono- and polycrystalline Si wafers might be saturated due to the shortage of Si feedstock. One of the methods to solve this issue is to make higher quality polycrystalline Si wafers which are capable of producing higher efficiency solar cells. In this work, the effects of changing several geometrical parameters were evaluated to improve the directional solidification (DS) method and to satisfy the above-mentioned main targets. The developed DS method has the advantages of the small heat loss, short cycle time and efficient directional solidification. Based on the fluid dynamics model, the numerical simulation was performed on the thermal characteristics during the DS process. Using a commercial CFD code, Fluent, the heat transfer characteristics in the DS system are calculated, and the results are graphically depicted.

Numerical Study on the Thermal Characteristics of Large Sized Silicon Polycrystal Growth by DS Method

2011 ◽  
Author(s):  
Hyeon-Seok Seo ◽  
Youn-Jea Kim
Keyword(s):  
Solar Cells ◽  
Directional Solidification ◽  
Numerical Study ◽  
Thermal Characteristics ◽  
Dynamics Model ◽  
Manufacturing Costs ◽  
Market Growth ◽  
Cooling Path ◽  
Solidification Processes ◽  
Solar Silicon

The development of the manufacturing processes of solar silicon ingot is one of the more important issues to guarantee the growth of the photovoltaic industry, because of the saving of manufacturing costs of ingots, wafers, solar cells and of solar modules. Several solidification processes have been developed by industries, including casting, heat exchanger method and electromagnetic casting. However, the market growth using mono- and polycrystalline Si wafers might be saturated due to the shortage of Si feedstock. One of the methods to solve this problem is to make higher quality polycrystalline Si wafers which are capable of producing higher efficiency solar cells. In this paper, the effects of changing several geometrical configurations of cooling path were evaluated to improve the directional solidification (DS) method and to achieve the main issues. The developed DS method has the advantages of the small heat loss, short cycle time and efficient directional solidification. Based on the CFD (computational fluid dynamics) model, the simulation was performed on the thermal characteristics during the DS process. Using a commercial CFD code, Fluent, the thermal characteristics in the DS system are calculated, and the results are graphically depicted.

scholarly journals Индий-индуцированная кристаллизация тонких пленок аморфного субоксида кремния

2020 ◽  
Vol 46 (12) ◽  
pp. 14
Author(s):  
А.О. Замчий ◽  
Е.А. Баранов ◽  
И.Е. Меркулова ◽  
Н.А. Лунев ◽  
В.А. Володин ◽  
...  
Keyword(s):  
Crystallization Temperature ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
High Vacuum ◽  
Stoichiometric Coefficient ◽  
Free Standing ◽  
Solid Phase Crystallization ◽  
Silicon Suboxide ◽  
Induced Crystallization

A novel fabrication method of polycrystalline silicon by indium-induced crystallization (InIC) of amorphous silicon suboxide thin films with a stoichiometric coefficient of 0.5 (a-SiO0.5) is proposed. It was shown that the use of indium in the annealing process of a SiO0.5 allowed to decrease the crystallization temperature to 600°С which was significantly lower than the solid-phase crystallization temperature of the material - 850°С. As a result of the high-vacuum InIC of a-SiO0.5, the formation of free-standing micron-sized crystalline silicon particles took place.

scholarly journals On the impact of twinning on the formation of the grain structure of multi-crystalline silicon for photovoltaic applications during directional solidification

2015 ◽  
Vol 418 ◽  
pp. 38-44 ◽  
Author(s):  
Thècle Riberi-Béridot ◽  
Nathalie Mangelinck-Noël ◽  
Amina Tandjaoui ◽  
Guillaume Reinhart ◽  
Bernard Billia ◽  
...  
Keyword(s):  
Directional Solidification ◽  
Crystalline Silicon ◽  
Grain Structure ◽  
Photovoltaic Applications ◽  
The Impact

Characterization of Crystalline Silicon via XRPD

2004 ◽  
Vol 443-444 ◽  
pp. 83-86
Author(s):  
Giovanni Berti ◽  
U. Bartoli ◽  
G. Basile ◽  
P. Becker ◽  
Andrew N. Fitch
Keyword(s):  
Grain Size ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Crystal Silicon ◽  
Conventional Radiation ◽  
Structural Contribution ◽  
Structural Arrangements

Three blocks of silicon have been crashed in this experiment in order to verify the crashing effects on specimens having distinct original micro-structural arrangements. One of them comes from a rod bar of mono-crystal silicon, two others were from polycrystalline silicon manufactured by two distinct manufacturers with distinct growing process. Several specimens of powders, differing in type and grain size, were obtained by treating these source samples. This paper reports on data collected from synchrotron and conventional radiation and the results show that powders obtained from mono-crystalline silicon provide diffraction profiles, where the structural contribution is smaller than for polycrystalline silicon specimens. The peaks from the 'mono-crystal powder' resulted even narrower than peaks from SRM Silicon 640b by NIST.

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