Cost-Effective Measurements of Piezoelectric Coefficient d33 of Thin-Film PZT Using a Mini Force Hammer

2011 ◽  
Author(s):  
Qing Guo ◽  
G. Z. Cao ◽  
I. Y. Shen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Piezoelectric Coefficient ◽  
New Method ◽  
Specimen Thickness ◽  
Film Material ◽  
Impulsive Force ◽  
Pzt Thin Films ◽  
Aspect Ratios ◽  
Pzt Thin Film

Lead Zirconate Titanate (PbZrxTi1−xO3 or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. One major challenge encountered is accurate measurement of piezoelectric coefficients of PZT thin films. In this paper, we present a simple, low-cost, and effective method to measure piezoelectric coefficient d33 of PZT thin films through use of basic principles in mechanics of vibration. We use a small impact hammer with a tiny tip to generate an impulsive force acting perpendicularly to the surface of a PZT film. In the meantime, we measure the impulsive force via a load cell and the responding charge of the PZT thin film via a charge amplifier. Then the piezoelectric coefficient d33 is obtained from the measured force and charge based on piezoelectricity and a finite element modeling. We also conduct a thorough parametric study to understand the sensitivity of this method on various parameters, such as substrate material, boundary conditions, specimen size, specimen thickness, thickness ratio, and PZT thin-film material. To demonstrate the feasibility, we calibrate the new method via a PZT thick film disk resonator with a known d33. Experimental results show that d33 measured via this method is as accurate as those from the manufacturer’s specifications within its tolerance. We then apply the new method to PZT thin films deposited on silicon substrate, and successfully measure the corresponding piezoelectric coefficient d33.

Measurements of Piezoelectric Coefficient d33 of Lead Zirconate Titanate Thin Films Using a Mini Force Hammer

2013 ◽  
Vol 135 (1) ◽  
Author(s):  
Qing Guo ◽  
G. Z. Cao ◽  
I. Y. Shen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Coefficient ◽  
Lead Zirconate ◽  
New Method ◽  
Impulsive Force ◽  
Pzt Thin Films ◽  
Zirconate Titanate ◽  
Pzt Thin Film

Lead zirconate titanate (PbZrxTi1-xO3, or PZT) is a piezoelectric material widely used as sensors and actuators. For microactuators, PZT often appears in the form of thin films to maintain proper aspect ratios. One major challenge encountered is accurate measurement of piezoelectric coefficients of PZT thin films. In this paper, we present a simple, low-cost, and effective method to measure piezoelectric coefficient d33 of PZT thin films through use of basic principles in mechanics of vibration. A small impact hammer with a tiny tip acts perpendicularly to the PZT thin-film surface to generate an impulsive force. In the meantime, a load cell at the hammer tip measures the impulsive force and a charge amplifier measures the responding charge of the PZT thin film. Then the piezoelectric coefficient d33 is obtained from the measured force and charge based on piezoelectricity and a finite element modeling. We also conduct a thorough parametric study to understand the sensitivity of this method on various parameters, such as substrate material, boundary conditions, specimen size, specimen thickness, thickness ratio, and PZT thin-film material. Two rounds of experiments are conducted to demonstrate the feasibility and accuracy of this new method. The first experiment is to measure d33 of a PZT disk resonator whose d33 is known. Experimental results show that d33 measured via this method is as accurate as that from the manufacturer's specifications within its tolerance. The second experiment is to measure d33 of PZT thin films deposited on silicon substrates. With the measured d33, we predict the displacement of PZT thin-film membrane microactuators. In the meantime, the actuator displacement is measured via a laser Doppler vibrometer. The predicted and measured displacements agree very well validating the accuracy of this new method.

A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Energy Harvester ◽  
Sol Gel ◽  
Pure Perovskite Structure ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates ◽  
Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

Effect of Annealing Treatment on PZT Thin Fiilm Properties Using Oxygen 18 Depth Profiling Technique

1998 ◽  
Vol 541 ◽  
Author(s):  
F. Ayguavives ◽  
B. Ea-Kim ◽  
B. Agius ◽  
I. Vickridge ◽  
A. I. Kingon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Plasma Deposition ◽  
Annealing Treatment ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Pzt Thin Films ◽  
Pzt Thin Film ◽  
Metallic Target

AbstractLead zirconate titanate (PZT) thin films have been deposited in a reactive argon/oxygen gas mixture from a metallic target of nominal composition Pb1.1(Zr0.4Ti0.6)O3 by rf magnetron sputtering on Si substrates and RuO2/SiO2/Si structures. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements clearly show a correlation between the evolution of characteristic atomic emission line intensities and the thin film composition determined by simultaneous Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA). As a result, the cathode surface state can be monitored by OES to ensure a good compositional transferability from the target to the film and reproducibility of thin film properties for given values of deposition parameters. Electrical properties and crystallization have been optimized with a 90 nm PZT thin film grown on RuO2 electrodes. These PZT films, annealed with a very modest thermal budget (550°C) are fatigue-free and show very low leakage currents (J=2.10−8 A/cm2 at 1 V). The use of a metallic target allows us to control the oxygen incorporation in the PZT thin film and also, using 18O as a tracer, to study the oxygen vacancy migration which plays a key role in fatigue, leakage current, and electrical degradation/breakdown in PZT thin films.

The Microstructure, Phase and Ferroelectric Properties of PZT Thin Films on Oriented Multilayer Electrodes

1999 ◽  
Vol 596 ◽  
Author(s):  
Tingkai Li ◽  
Sheng Teng Hsu ◽  
Yufei Gao ◽  
Mark Engelhard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hysteresis Loop ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Experimental Results ◽  
Butyl Ether ◽  
Pzt Thin Films ◽  
Pzt Thin Film

AbstractThree kinds of oriented electrodes of Pt, Ir and Pt/Ir electrodes were prepared using electron beam evaporation techniques for deposition of PZT thin films. An oxide MOCVD reactor with liquid delivery system was used for the growth of PZT thin films. [Pb(thd)2], Zr(TMHD)4 and Ti(IPO)4 were dissolved in a mixed solvent of tetrahydrofuran or butyl ether, isopropanol and tetraglyme to form a precursor source. The deposition temperature and pressure were 500 - 650°C and 5 - 10 Torr, respectively. The experimental results showed PZT thin film deposited on various electrodes had different phase formation, microstructure and ferroelectric property. The X-ray patterns showed the perovskite phase of PZT was formed on both Ir and Pt/Ir electrodes at 550°C. The grain size of the PZT thin film increases after a further, higher temperature annealing. The as-deposited PZT thin film on Pt electrode exhibits pyrochlore phase at 550°C. The phase is transformed to perovskite phase after 650°C annealing. The experimental results also indicated that the MOCVD PZT thin film on Pt/Ir exhibits better ferroelectric and electrical properties compared to those deposited on Pt and Ir electrodes. A 300 nm thick PZT thin film on Pt/Ir electrode has a square, well saturated, and symmetrical hysteresis loop with 2Pr value of 40 μC/cm2 and 2Ec of 73 kV/cm at an applied voltage of 5 V. The hysteresis loop of the PZT thin film is almost saturated at 2 V. The leakage current of the film is 6.16 × 10−7 A/cm2 at 100 KV/cm. The electrode effects on ferroelectric properties of PZT thin films also have been investigated.

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

Measuring Fatigue in PZT Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
D. J. Johnson ◽  
D. T. Amm ◽  
E. Griswold ◽  
K. Sreenivas ◽  
G. Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Permittivity ◽  
Dielectric Response ◽  
Remanent Polarization ◽  
Small Signal ◽  
Large Signal ◽  
Pzt Thin Films ◽  
Pzt Thin Film

ABSTRACTSmall signal dielectric response is reported for a variety of PZT thin film samples. Small and large signal responses, recorded simultaneously during the fatiguing of PZT thin films, are used to identify distinct fatigue mechanisms. Microcracking or electrode delamination less than 100 Å is sufficient to explain the high correlation between the dielectric permittivity and remanent polarization during fatigue.

Development of Multi-Layered Composite PZT Thin Films for Active Sliders in Hard Disk Drives

2002 ◽  
Author(s):  
Norio Tagawa ◽  
Ken-ichi Kitamura ◽  
Atsunobu Mori
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Hard Disk Drives ◽  
Hard Disk ◽  
Layered Composite ◽  
The Novel ◽  
Disk Drives ◽  
Pzt Thin Films ◽  
Pzt Thin Film

This paper describes the development of novel PZT thin films for active sliders in hard disk drives. So far, it is common that single-layered thin films are used as micro-actuators for conventional PZT thin films such as sol-gel or sputtered thin films. In this study, however, the novel composite PZT thin films are developed. The feature is that sol-gel PZT thin film is deposited on sputtered PZT thin film fabricated on Pt/Ti bottom electrode. These multilayered composite PZT thin films are found to have the higher (111) preferred orientation as well as better P-E hysteresis loop characteristics than not only sol-gel PZT thin films but also sputtered PZT thin films. Furthermore, the piezoelectric strain constant d31 for the novel PZT thin films is identified to be 189 × 10−12m/V. This value is 2.0 times higher than that for conventional PZT thin films and it is found that the novel PZT thin films have good piezoelectric properties.

X-Ray Diffraction Method for Determining Textured Volume Fractions in PZT Thin Films

1998 ◽  
Vol 541 ◽  
Author(s):  
G.R. Fox
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Critical Role ◽  
New Method ◽  
Electrical Performance ◽  
Constant Thickness ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Volume Fractions

AbstractThe crystallographic texture of PZT thin films has been proven to play a critical role in the electrical performance of PZT used in non-volatile FRAM. During both development and production of FRAM, PZT texture must be monitored to assure ferroelectric performance. A common method for monitoring texture is to use normalized intensities collected from X-ray diffraction 2-theta scans. Although this method can reveal thin film texture, it does not give a quantitative measure of the volume of textured and/or random material. In addition, this method can only be used to compare films with constant thickness since differences in X-ray absorption are not taken into account. A new method for calculating the volume fractions of textured and randomly oriented material in PZT thin films has been developed. This new method for calculating textured volume fractions still utilizes integrated intensities from 2-theta scans, but the calculations include corrections for film thickness and geometrical factors. The calculated volume fractions obtained from this new method of data analysis can be used directly for physical evaluation of PZT thin film ferroelectric performance.

scholarly journals Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Cui Yan ◽  
Yao Minglei ◽  
Zhang Qunying ◽  
Chen Xiaolong ◽  
Chu Jinkui ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Grain Sizes ◽  
Pzt Thin Film ◽  
Average Residual

Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O3(PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

Preparation of sub-100nm Thickness PZT thin Films with Chemical Solution Deposition Method for low Voltage Operation

2000 ◽  
Vol 655 ◽  
Author(s):  
Yong Kyun Lee ◽  
June Key Lee ◽  
Chang Jung Kim ◽  
Insook Yi ◽  
Ilsub Chung
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Seed Layer ◽  
Low Voltage ◽  
Nucleation Density ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method ◽  
Low Voltage Operation ◽  
Pzt Thin Film ◽  
Hysteretic Properties

AbstractPZT thin films with a thickness of 70 nm were successfully fabricated using a modified solution combined with PbTiO3 seed layer. Throughout various approaches, we found that the microstructure of PZT thin film plays an important role in determining the electrical properties such as hysteretic properties and leakage currents, particularly when the thickness is below 100 nm. We modified the precursor system to improve the microstructure in PZT thin film. In addition, we also adopted a thin PbTiO3 seed layer to enhance the initial nucleation density. Finally, we could obtain good electric properties similar to those obtained from 240 nm thick PZT film. The hysteretic properties is excellent enough to operate at a low voltage (2V) for a high density FRAM application.

Sign in / Sign up

Export Citation Format

Share Document