Thermal Boundary Conductance Between Thin Metal Films and Graphite Substrates

2011 ◽  
Author(s):  
Justin L. Smoyer ◽  
John C. Duda ◽  
Pamela M. Norris ◽  
Arthur W. Lichtenberger
Keyword(s):  
Thin Films ◽  
Adhesion Force ◽  
Thermal Conductance ◽  
Metallic Thin Films ◽  
Temperature Dependent ◽  
Carbon Structure ◽  
Thermal Boundary Conductance ◽  
Surrounding Structure ◽  
Intrinsic Thermal Conductivity

Due to the high intrinsic thermal conductivity of graphitic structures, much interest has developed in incorporating these materials into modern nano-devices for improved thermal abatement. In order to be integrated successfully, thermal energy must be able to transport efficiently through the graphitic materials and into the surrounding structure, most commonly a metal. However, thermal boundary conductance at metal-graphite interfaces is traditionally poor in comparison to non-graphitic substrates, due in large part to the weak van der Waals adhesion force between the metal and underlying carbon structure. To be applicable as thermal abatement materials, an enhanced understanding of the role of the metal-carbon interface is required. This paper reports the changes to phononic thermal transport across the interface between metallic thin films and highly oriented pyrolitic graphite (HOPG) substrates due to changes in interface structure and chemistry. The temperature dependent thermal boundary conductance is measured using transient thermoreflectance from 100 K to 400 K. It is found that the differences in metal-carbon bonding and structure at the interface have a significant impact on the thermal conductance between the metallic thin films and the HOPG substrates.

Temperature Dependent Current-Voltage Characteristics in Thin SiO2 Films

1989 ◽  
Vol 159 ◽  
Author(s):  
Jin Zhao ◽  
N. M. Ravindra
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Temperature Dependent ◽  
Sio2 Films ◽  
Breakdown Electric Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Nordheim Tunneling

ABSTRACTAn analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature dependent current-voltage characteristics, of very thin films of SiO2 on silicon, is presented. The final results are believed to provide the most complete examination of FN emission theory and predict the breakdown electric field in thin SiO2 films. The role of the roughness, at the Si-SiO2 interface, in determining the FNT current in these structures is also discussed.

scholarly journals Large-Area Nanocrystalline Caesium Lead Chloride Thin Films: A Focus on the Exciton Recombination Dynamics

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 434
Author(s):  
Naomi Falsini ◽  
Nicola Calisi ◽  
Giammarco Roini ◽  
Andrea Ristori ◽  
Francesco Biccari ◽  
...  
Keyword(s):  
Thin Films ◽  
Quantitative Information ◽  
Lead Chloride ◽  
Large Area ◽  
Temperature Dependent ◽  
Time Resolved ◽  
White Leds ◽  
Halide Perovskites ◽  
Recombination Dynamics

Caesium lead halide perovskites were recently demonstrated to be a relevant class of semiconductors for photonics and optoelectronics. Unlike CsPbBr3 and CsPbI3, the realization of high-quality thin films of CsPbCl3, particularly interesting for highly efficient white LEDs when coupled to converting phosphors, is still a very demanding task. In this work we report the first successful deposition of nanocrystalline CsPbCl3 thin films (70–150 nm) by radio frequency magnetron sputtering on large-area substrates. We present a detailed investigation of the optical properties by high resolution photoluminescence (PL) spectroscopy, resolved in time and space in the range 10–300 K, providing quantitative information concerning carriers and excitons recombination dynamics. The PL is characterized by a limited inhomogeneous broadening (~15 meV at 10 K) and its origin is discussed from detailed analysis with investigations at the micro-scale. The samples, obtained without any post-growth treatment, show a homogeneous PL emission in spectrum and intensity on large sample areas (several cm2). Temperature dependent and time-resolved PL spectra elucidate the role of carrier trapping in determining the PL quenching up to room temperature. Our results open the route for the realization of large-area inorganic halide perovskite films for photonic and optoelectronic devices.

Expanded Thermochromic Color Changes in VO2 Thin Film Devices Using Structured Plasmonic Metal Layers

2013 ◽  
Vol 1494 ◽  
pp. 171-177
Author(s):  
Yan Wang ◽  
John F. Muth
Keyword(s):  
Thin Films ◽  
Near Infrared ◽  
Color Change ◽  
Large Change ◽  
Metallic Phase ◽  
Metallic Thin Films ◽  
Color Changes ◽  
Surface Plasmas ◽  
Metal Layers

ABSTRACTWe investigate metallic thin films on VO2 and show that the magnitude of the reflected color change in that visible portion of the spectrum as VO2 undergoes the insulating to metallic phase transition can be controlled by changing the type of metal, the thickness of the metal and by patterning the metal at the nano scale. We consider the role of surface plasmas in the metal film and show that in the near infrared, the magnitude of the reflectivity increase for metal coated VO2 films, but decrease for uncoated VO2 thin films. This is explained in the context of Fresnel equations and considering the large change in the imaginary part of the dielectric constant as the VO2 changes state from the insulating to metallic phase.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Rocking Beam Microarea Diffraction Applied to Metallic thin Films

1976 ◽  
Vol 34 ◽  
pp. 396-397
Author(s):  
R. H. Geiss
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Small Area ◽  
Objective Lens ◽  
Electron Optics ◽  
Metallic Thin Films ◽  
Transmission Electron Diffraction ◽  
Transmission Electron ◽  
Sample Height ◽  
Scanning Transmission

The theory and practical limitations of micro area scanning transmission electron diffraction (MASTED) will be presented. It has been demonstrated that MASTED patterns of metallic thin films from areas as small as 30 Åin diameter may be obtained with the standard STEM unit available for the Philips 301 TEM. The key to the successful application of MASTED to very small area diffraction is the proper use of the electron optics of the STEM unit. First the objective lens current must be adjusted such that the image of the C2 aperture is quasi-stationary under the action of the rocking beam (obtained with 40-80-160 SEM settings of the P301). Second, the sample must be elevated to coincide with the C2 aperture image and its image also be quasi-stationary. This sample height adjustment must be entirely mechanical after the objective lens current has been fixed in the first step.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

Sign in / Sign up

Export Citation Format

Share Document