Optimized Design of Various Ag Decorated Sn-xAg-Cu0.7 Solder Bump on Cycling Fatigue Reliability for Wafer-Level Chip Scale Packaging

2021 ◽  
Author(s):  
Hwa-Teng Lee ◽  
Ching-Yuan Ho ◽  
Chao Chin Lee
Keyword(s):  
Eutectic Point ◽  
Optimized Design ◽  
Fatigue Reliability ◽  
Wafer Level ◽  
Fatigue Lifetime ◽  
Coexistence Phase ◽  
Ag Additions ◽  
Plastic Displacement ◽  
Solid Liquid ◽  
Solder Interface

Abstract Effects of Ag content (0 ~ 3 wt.%) in Sn-xAgCu0.7 solders on microstructure characteristics and low cycling fatigue at different temperature conditions are overall investigated. To increase Ag content, the solidus point 228.8 ? of Sn-Cu0.7 gradually decreases to 218.5 ? and temperature range of solid-liquid coexistence phase is also decrease. The Sn-Cu0.7 matrix consisted of small particles of Cu6Sn5 within ß-Sn equiaxial grains and did not significantly influence solder hardness. Moreover, much intermetallic compound of plate-like Ag3Sn and rod-like Cu6Sn5 existed in Sn-xAgCu0.7 solders enables to enhance the hardness due to dense network of Ag3Sn precipitation and near eutectic point. As a result of plastic displacement decreases with higher Ag additions, better fatigue lifetime could be achieved at Ag content to 1.5 wt.%. Besides, crack stemmed from thicker IMC layer in Sn-3.0Ag-Cu0.7 solder interface will decrease fatigue performance especially for 80 ? and 120 ?.

scholarly journals Wafer-Level AuSn/Pt Solid–Liquid Interdiffusion Bonding

2018 ◽  
Vol 8 (2) ◽  
pp. 169-176 ◽  
Author(s):  
Antti Rautiainen ◽  
Vesa Vuorinen ◽  
Hannele Heikkinen ◽  
Mervi Paulasto-Krockel
Keyword(s):  
Wafer Level ◽  
Solid Liquid

Void Formation and Bond Strength Investigated for Wafer-Level Cu-Sn Solid-Liquid Interdiffusion (SLID) Bonding

2014 ◽  
Vol 11 (1) ◽  
pp. 1-6
Author(s):  
Astrid-Sofie B. Vardøy ◽  
H. J. van de Wiel ◽  
Stian Martinsen ◽  
Greg R. Hayes ◽  
Hartmut R. Fischer ◽  
...  
Keyword(s):  
Shear Strength ◽  
Process Parameters ◽  
Storage Time ◽  
Void Formation ◽  
Wafer Level ◽  
Lower Range ◽  
Thermal Budget ◽  
Average Value ◽  
Application Analysis ◽  
Solid Liquid

Hermetic wafer-level Cu-Sn solid-liquid interdiffusion (SLID) bonding was investigated to explore the sensitivity of selected process parameters with regard to voiding and possible reduction of strength. Little or no variation was observed in the void density as a result of modifying the plated Sn thickness, the storage time between plating and bonding, the bonding tool pressure, or the thermal budget during bonding. All shear tested samples showed excellent shear strength, with an average value within 110–164 MPa. Some statistically significant differences in shear strength were found due to the variations of the process parameters. However, the differences were too small to be critical for the application. Analysis of fracture surfaces showed that the shear strengths in the lower range corresponded to fracture between the adhesion layer (TiW) and the silicon cap, while shear strengths in the higher range corresponded to fracture in the Cu3Sn formed during the bonding. The results indicate that the investigated bonding process is robust with regard to the studied process parameters.

HYDROGEN PEROXIDE AND ITS ANALOGUES: V. PHASE EQUILIBRIA IN THE SYSTEM D2O–D2O2

1954 ◽  
Vol 32 (5) ◽  
pp. 550-556 ◽  
Author(s):  
Paul A. Giguère ◽  
E. A. Secco
Keyword(s):  
Hydrogen Peroxide ◽  
Melting Point ◽  
Freezing Point ◽  
Eutectic Point ◽  
Cooling Curves ◽  
Addition Compound ◽  
Concentrated Solutions ◽  
Number Of Solutions ◽  
Point Curve ◽  
Solid Liquid

The cooling curves of a number of solutions of deuterium peroxide in heavy water in the concentration range 11% to 95% were measured in order to determine the solid-liquid phase diagram for that binary system. The apparatus of Herington and Handley, which uses a pulsing pressure for stirring the solutions, and a thermistor, was found to be particularly suitable for that purpose. As could be expected the freezing-point curve of the deuterated compounds is closely similar to that of the hydrogen compounds, being shifted up only by about 4° for water-rich solutions and by 2° for peroxide-rich solutions. The melting point of the addition compound, D2O.2D2O very nearly coincides with one of the eutectic points at 46.2% D2O2 and −51.5 °C.; the other eutectic point is at 60.5% D2O2 and −55.1 °C. By extrapolation the melting point of pure deuterium peroxide is found to be 1.5 °C. as compared with −0.43 °C. for hydrogen peroxide. Concentrated solutions of deuterium peroxide exhibit an extreme tendency to supercool, resulting sometimes in formation of glasses even at liquid-air temperature. The previous results of Foley and Giguère for the system H2O–H2O2 were confirmed, specially as regards the melting point of the addition compound H2O2•2H2O.

Void formation and bond strength investigated for wafer-level Cu-Sn solid-liquid interdiffusion (SLID) bonding

2013 ◽  
Vol 2013 (1) ◽  
pp. 000717-000722
Author(s):  
Astrid-Sofie B. Vardøy ◽  
H.J. van de Wiel ◽  
Stian Martinsen ◽  
Greg R. Hayes ◽  
Hartmut R. Fischer ◽  
...  
Keyword(s):  
Shear Strength ◽  
Process Parameters ◽  
Storage Time ◽  
Void Formation ◽  
Wafer Level ◽  
Adhesion Layer ◽  
Lower Range ◽  
Thermal Budget ◽  
Application Analysis ◽  
Solid Liquid

A hermetic wafer-level Cu-Sn solid-liquid interdiffusion (SLID) bonding was investigated to explore the sensitivity of selected process parameters with regard to voiding and possible reduction of strength. Little or no variation was observed in the void density as a result of modifying the plated Sn-thickness, the storage time between plating and bonding, the bonding tool pressure, or the thermal budget during bonding. All shear tested samples showed excellent shear strength, with an average of 110 - 164 MPa. Some statistically significant differences in shear strength were found between the varied process parameters. However, the differences were too small to be critical for the application. Analysis of fracture surfaces showed that shear strengths in the lower range corresponded to fracture between the adhesion layer (TiW) and the silicon cap, while shear strengths in the higher range corresponded to fracture in the Cu3Sn formed during the bonding. The results indicate that the bonding process is robust with regard to the studied process parameters.

Wafer-Level Solid-Liquid Interdiffusion Bonding

2012 ◽  
pp. 181-214 ◽  
Author(s):  
Nils Hoivik ◽  
Knut Aasmundtveit
Keyword(s):  
Wafer Level ◽  
Solid Liquid

scholarly journals Wafer Level Solid Liquid Interdiffusion Bonding: Formation and Evolution of Microstructures

2020 ◽  
Author(s):  
V. Vuorinen ◽  
H. Dong ◽  
G. Ross ◽  
J. Hotchkiss ◽  
J. Kaaos ◽  
...  
Keyword(s):  
Microelectromechanical Systems ◽  
Bonding Temperature ◽  
Transient Liquid Phase ◽  
Wafer Level ◽  
Simultaneous Formation ◽  
Die Attach ◽  
Local Stresses ◽  
Formation And Evolution ◽  
Solid Liquid ◽  
Global And Local

Abstract Wafer-level solid liquid interdiffusion (SLID) bonding, also known as transient liquid-phase bonding, is becoming an increasingly attractive method for industrial usage since it can provide simultaneous formation of electrical interconnections and hermetic encapsulation for microelectromechanical systems. Additionally, SLID is utilized in die-attach bonding for electronic power components. In order to ensure the functionality and reliability of the devices, a fundamental understanding of the formation and evolution of interconnection microstructures, as well as global and local stresses, is of utmost importance. In this work a low-temperature Cu-In-Sn based SLID bonding process is presented. It was discovered that by introducing In to the traditional Cu-Sn metallurgy as an additional alloying element, it is possible to significantly decrease the bonding temperature. Decreasing the bonding temperature results in lower CTE induced global residual stresses. However, there are still several open issues to be studied regarding the effects of dissolved In on the physical properties of the Cu-Sn intermetallics. Additionally, partially metastable microstructures were observed in bonded samples that did not significantly evolve during thermal annealing. This indicates the Cu-In-Sn SLID bond microstructure is extremely stable.

scholarly journals Solid-Liquid Phase Diagram of the Binary System Octadecanoic Acid and Octadecanol and the Thermal Chemical Property of the Composition at Eutectic Point

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Can Liu ◽  
Kaiyu Zhao ◽  
Yafei Guo ◽  
Liping Guo ◽  
Tianlong Deng
Keyword(s):  
Phase Diagram ◽  
Liquid Phase ◽  
Binary System ◽  
Phase Change ◽  
Mass Fraction ◽  
Eutectic Point ◽  
Octadecanoic Acid ◽  
Phase Change Temperature ◽  
Change Temperature ◽  
Solid Liquid

Phase diagram is a powerful tool to guide the exploitation of thermal energy materials. Heat storage technology of phase-change material (PCM) was widely used to solve major energy utilization problems on large energy consumption and low utilization efficiency. In this work, a novel solid-liquid phase diagram of the binary system octadecanoic acid (C18-acid) + octadecanol (C18-OH) was investigated using the differential scanning calorimeter (DSC). The phase-change temperature and phase-change enthalpies against the composition of C18-acid and C18-OH were determined experimentally, and then the binary phase diagram of T–X (X expresses the mass fraction of C18-OH in the two components of C18-acid and C18-OH) was established for the first time. The phase diagram belongs to a binary simple system with one eutectic point, and the content of C18-OH at eutectic point is 0.4 in mass fraction. Neither solid solution nor copolymer was formed. The thermal chemical properties on the phase-change latent heat (Q), phase-change temperature (Tp), and the thermal conductivity (λ) for the composition at the eutectic point of the binary system are 198.7 J·g−1, 44.2°C, and 0.2352 W·m−1·K−1, respectively. This result indicates that the material at eutectic point has a great potential to be used as energy storage material for supply of heat and scouring bath.

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