High Temperature Performance Evaluation and Life Prediction for Titanium Modified Silicone Used in Light-Emitting Diodes Chip Scale Packages

2020 ◽  
Vol 142 (2) ◽  
Author(s):  
Si Yu ◽  
Zhen Wang ◽  
Jiajie Fan ◽  
Cheng Qian ◽  
Zhentao Deng ◽  
...  
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Heat Dissipation ◽  
Light Emitting Diodes ◽  
Temperature Stability ◽  
Cost Effective ◽  
Practical Significance ◽  
Light Sources ◽  
High Temperature Stability ◽  
Light Emitting

Abstract Light-emitting diodes (LED) chip scale packages (CSPs) have been promoted as a new light source with many advantages in smaller package size, lower material and process cost, and better heat dissipation effect. However, as it is exposed in harsh environments such as high temperature, high humidity, and high blue light irradiation, silicone material used in LED CSPs always suffers deterioration, which will seriously affect the LED's reliability and working life. Thus, the preparation of high reliable silicone has practical significance to promote the application of LED CSPs in lighting. In this research, titanium was introduced into the molecular chain of phenyl silicone by using the hydrolysis condensation method. A high temperature aging test was then performed to the prepared silicone before and after modification, and their optical, thermomechanical, and dielectric properties were characterized to evaluate their reliabilities. The results show that: (1) the Arrhenius function with the dielectric property as an aging characterization can be used as a temperature accelerated life model to predict the service life of the prepared silicone and (2) the titanium modified silicone can advance the high temperature stability on optical properties, thermomechanical, and dielectric properties and enhance the life expectancy. The major contributions of this study are to support the improvement of the novel LED CSP packaging materials and processes, and also to provide the technical guidance on the fast, accurate, and cost-effective reliability assessment for high-quality LED light sources.

High-Temperature Spin-On Adhesives for Temporary Wafer Bonding

2007 ◽  
Vol 4 (3) ◽  
pp. 105-111 ◽  
Author(s):  
S. Pillalamarri ◽  
R. Puligadda ◽  
C. Brubaker ◽  
M. Wimplinger ◽  
S. Pargfrieder
Keyword(s):  
High Temperature ◽  
Wafer Bonding ◽  
Heat Dissipation ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Performance Requirements ◽  
Wide Range ◽  
Bonding Properties ◽  
Partial List ◽  
Wafer Thinning

Wafer thinning has been effectively used to improve heat dissipation in power devices and to fabricate flexible substrates, small chip packages, and multiple chips in a package. Wafer handling has become an important issue due to the tendency of thinned wafers to warp and fold. Thinned wafers need to be supported during the backgrinding process, lithography, deposition, etc. Temporary wafer bonding using removable adhesives provides a feasible route to wafer thinning. Existing adhesives meet only a partial list of performance requirements. They do not meet the requirements of high-temperature stability combined with ease of removal. This paper reports on the development of a wide range of temporary adhesives to be used in wafer thinning applications that use both novel and conventional bonding and debonding methods. We have developed a series of novel removable high-temperature spin-on adhesives with excellent bonding properties and a wide range of operating temperatures for bonding and/or debonding to achieve a better processing window.

scholarly journals Enhanced efficiency and high temperature stability of hybrid quantum dot light-emitting diodes using molybdenum oxide doped hole transport layer

RSC Advances ◽  
2019 ◽  
Vol 9 (28) ◽  
pp. 16252-16257 ◽  
Author(s):  
Jinyoung Yun ◽  
Jaeyun Kim ◽  
Byung Jun Jung ◽  
Gyutae Kim ◽  
Jeonghun Kwak
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Molybdenum Oxide ◽  
Temperature Stability ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Transport Layer ◽  
Stable Operation ◽  
High Temperature Stability ◽  
Light Emitting

QLEDs introducing a p-doped HTL exhibit stable operation at high temperature up to 400 K.

TEMPERATURE-INDEPENDENT DIELECTRIC PROPERTIES OF 0.82[0.94Bi0.5Na0.5TiO3–0.06BaTiO3]–0.18K0.5Na0.5NbO3 CERAMICS

2012 ◽  
Vol 02 (01) ◽  
pp. 1250006 ◽  
Author(s):  
YANG LIU ◽  
ZHUO XU ◽  
YUJUN FENG
Keyword(s):  
High Temperature ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Annealing Treatment ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Average Value ◽  
Pure Perovskite Phase ◽  
Ceramic Capacitor ◽  
Sintered Temperature

In order to explore the high temperature stability of ceramic capacitor, we present temperature-independent dielectric properties of 0.82[0.94Bi0.5Na0.5TiO3–0.06BaTiO3]–0.18K0.5Na0.5NbO3 (BNT–BT–18KNN) ceramics. For different sintered temperature and annealing treatment, the pseudoternary system showed a εr of 2265 at 1 kHz at 35°C with a normalized permittivity ε/ε35°C varying less than ±15% from 11°C to 382°C. This pure perovskite phase with slimmer and heat proof P–E loops possessed energy density of 0.616 J/cm3 with a tolerance of about ±3% in a temperature interval ranging from 20°C to 120°C, which is higher and more temperature stable than most ceramic capacitors, such as PLZST and 0.89BNT–0.06BT–0.05KNN. This relaxor ferroelectric (at room temperature) with parabolic bipolar strain–electric (S(E)) curve showed a quite low temperature dependence of positive strain with less than ±6.5% tolerance from the average value of 0.091% between 20°C and 120°C, which is also more temperature stable than the same composition Zhang et al. reported. These merits demonstrate that the newly produced BNT–BT–18KNN ceramics should be a promising candidate for the development of high-temperature capacitor and actuator materials.

UNS N06455

Alloy Digest ◽  
1989 ◽  
Vol 38 (1) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Stress Corrosion Cracking ◽  
Temperature Stability ◽  
Heat Treating ◽  
High Ductility ◽  
High Temperature Stability ◽  
Nickel Chromium ◽  
Long Time ◽  
Resistance To Stress

Abstract UNS NO6455 is a nickel-chromium-molybdenum alloy with outstanding high-temperature stability as shown by high ductility and corrosion resistance even after long-time aging in the range 1200-1900 F. The alloy also has excellent resistance to stress-corrosion cracking and to oxidizing atmospheres up to 1900 F. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Ni-367. Producer or source: Nickel and nickel alloy producers.

UNS R54620

Alloy Digest ◽  
1987 ◽  
Vol 36 (7) ◽  
Keyword(s):  
Titanium Alloy ◽  
High Temperature ◽  
Time Use ◽  
Temperature Stability ◽  
High Strength ◽  
Heat Treating ◽  
High Temperature Stability ◽  
Beta Titanium Alloy ◽  
Beta Titanium ◽  
Long Time

Abstract UNS No. R54620 is an alpha-beta titanium alloy. It has an excellent combination of tensile strength, creep strength, toughness and high-temperature stability that makes it suitable for service to 1050 F. It is recommended for use where high strength is required. It has outstanding advantages for long-time use at temperatures to 800 F. This datasheet provides information on composition, physical properties, elasticity, tensile properties, and bend strength as well as creep. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: Ti-86. Producer or source: Titanium alloy mills.

scholarly journals Application of Light-Emitting Diodes for Improving the Nutritional Quality and Bioactive Compound Levels of Some Crops and Medicinal Plants

Molecules ◽  
2021 ◽  
Vol 26 (5) ◽  
pp. 1477
Author(s):  
Woo-Suk Jung ◽  
Ill-Min Chung ◽  
Myeong Ha Hwang ◽  
Seung-Hyun Kim ◽  
Chang Yeon Yu ◽  
...  
Keyword(s):  
Plant Growth ◽  
In Vitro Culture ◽  
Light Emitting Diodes ◽  
Photosynthetic Pigment ◽  
Antioxidant Properties ◽  
Light Sources ◽  
Light Emitting ◽  
Cell Defense ◽  
Led Irradiation

Light is a key factor that affects phytochemical synthesis and accumulation in plants. Due to limitations of the environment or cultivated land, there is an urgent need to develop indoor cultivation systems to obtain higher yields with increased phytochemical concentrations using convenient light sources. Light-emitting diodes (LEDs) have several advantages, including consumption of lesser power, longer half-life, higher efficacy, and wider variation in the spectral wavelength than traditional light sources; therefore, these devices are preferred for in vitro culture and indoor plant growth. Moreover, LED irradiation of seedlings enhances plant biomass, nutrient and secondary metabolite levels, and antioxidant properties. Specifically, red and blue LED irradiation exerts strong effects on photosynthesis, stomatal functioning, phototropism, photomorphogenesis, and photosynthetic pigment levels. Additionally, ex vitro plantlet development and acclimatization can be enhanced by regulating the spectral properties of LEDs. Applying an appropriate LED spectral wavelength significantly increases antioxidant enzyme activity in plants, thereby enhancing the cell defense system and providing protection from oxidative damage. Since different plant species respond differently to lighting in the cultivation environment, it is necessary to evaluate specific wavebands before large-scale LED application for controlled in vitro plant growth. This review focuses on the most recent advances and applications of LEDs for in vitro culture organogenesis. The mechanisms underlying the production of different phytochemicals, including phenolics, flavonoids, carotenoids, anthocyanins, and antioxidant enzymes, have also been discussed.

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