scholarly journals Liquid-Cooled Aluminum Silicon Carbide Heat Sinks for Reliable Power Electronics Packages

2019 ◽  
Vol 141 (4) ◽  
Author(s):  
Darshan G. Pahinkar ◽  
Lauren Boteler ◽  
Dimeji Ibitayo ◽  
Sreekant Narumanchi ◽  
Paul Paret ◽  
...  
Keyword(s):  
Heat Transfer ◽  
Silicon Carbide ◽  
Thermal Cycling ◽  
Power Electronics ◽  
Coefficient Of Thermal Expansion ◽  
Base Plate ◽  
Transfer Coefficients ◽  
Pin Fins ◽  
Aluminum Silicon Carbide ◽  
Aluminum Silicon

With recent advances in the state-of-the-art of power electronic devices, packaging has become one of the critical factors limiting the performance and durability of power electronics. To this end, this study investigates the feasibility of a novel integrated package assembly, which consists of copper circuit layer on an aluminum nitride (AlN) dielectric layer that is bonded to an aluminum silicon carbide (AlSiC) substrate. The entire assembly possesses a low coefficient of thermal expansion (CTE) mismatch which aids in the thermal cycling reliability of the structure. The new assembly can serve as a replacement for the conventionally used direct bonded copper (DBC)—Cu base plate—Al heat sink assembly. While improvements in thermal cycling stability of more than a factor of 18 has been demonstrated, the use of AlSiC can result in increased thermal resistance when compared to thick copper heat spreaders. To address this issue, we demonstrate that the integration of single-phase liquid cooling in the AlSiC layer can result in improved thermal performance, matching that of copper heat spreading layers. This is aided by the use of heat transfer enhancement features built into the AlSiC layer. It is found that, for a given pumping power and through analytical optimization of geometries, microchannels, pin fins, and jets can be designed to yield a heat transfer coefficients (HTCs) of up to 65,000 W m−2 K−1, which can result in competitive device temperatures as Cu-baseplate designs, but with added reliability.

Reliability Assessment of a New Power Electronics Packaging Material: Silver Diamond Composite

2013 ◽  
Vol 10 (2) ◽  
pp. 54-58 ◽  
Author(s):  
M. Faqir ◽  
J. W. Pomeroy ◽  
T. Batten ◽  
T. Mrotzek ◽  
S. Knippscheer ◽  
...  
Keyword(s):  
Thermal Cycling ◽  
Power Electronics ◽  
Structural Changes ◽  
Coefficient Of Thermal Expansion ◽  
Base Plate ◽  
Electronics Packaging ◽  
Case Scenario ◽  
Worst Case ◽  
New Material ◽  
Work Samples

A reliability analysis of silver diamond composites in terms of both thermal and mechanical properties is presented. This new material is an attractive solution for power electronics packaging, because an improvement of 50% in terms of thermal management and channel temperature can be obtained when using silver diamond composites as a base plate in packages compared with the more traditionally used materials such as CuW. However, to date, little is known about the reliability of this new material, such as changes induced in its properties by thermal cycling. Assessment of the reliability of silver diamond composites is the aim of this work. Samples were submitted to 10 thermal cycles from room temperature to 350°C, and subsequently, a further 500 cycles of thermal shock as well as thermal cycling from −55°C to 125°C following typical standards used in space and military applications. In the worst-case scenario, thermal conductivity only decreased from 830 W/m·K to ∼700 W/m·K. An increase in the coefficient of thermal expansion and a change in diamond stress, were also observed after thermal cycling. Some structural modifications at the silver-diamond interface were found to be the underlying reason for the observed material properties change. These structural changes take place after the initial thermal cycling, and are constant thereafter. Changes found in thermal properties are satisfactory for enabling a significant improvement to standard CuW packaging materials.

Comparison of Pressure Drop and Endwall Heat Transfer Measurements to Flow Visualization Testing of Solid and Porous Pin Fin Arrays

2009 ◽  
Author(s):  
Jared M. Pent ◽  
Jay S. Kapat ◽  
Mark Ricklick
Keyword(s):  
Heat Transfer ◽  
Pressure Drop ◽  
Flow Visualization ◽  
Local Heat Transfer ◽  
Ccd Camera ◽  
Local Heat ◽  
Transfer Coefficients ◽  
Porous Aluminum ◽  
Pin Fins ◽  
A Charge

This paper examines the local and averaged endwall heat transfer effects of a staggered array of porous aluminum pin fins with a channel blockage ratio (blocked channel area divided by open channel area) of 50%. Two sets of pins were used with pore densities of 0 (solid) and 10 pores per inch (PPI). The pressure drop through the channel was also determined for several flow rates using each set of pins. Local heat transfer coefficients on the endwall were measured using Thermochromatic Liquid Crystal (TLC) sheets recorded with a charge-coupled device (CCD) camera. Static and total pressure measurements were taken at the entrance and exit of the test section to determine the overall pressure drop through the channel and explain the heat transfer trends through the channel. The heat transfer and pressure data was then compared to flow visualization tests that were run using a fog generator. Results are presented for the two sets of pins with Reynolds numbers between 25000 and 130000. Local HTC (heat transfer coefficient) profiles as well as spanwise and streamwise averaged HTC plots are displayed for both pin arrays. The thermal performance was calculated for each pin set and Reynolds number. All experiments were carried out in a channel with an X/D of 1.72, a Y/D of 2.0, and a Z/D of 1.72.

scholarly journals Prediction of Strain Rate of Aluminum/Silicon Carbide Using Gray Level Run-Length Matrices

2017 ◽  
Vol 11 (5) ◽  
Author(s):  
Ahmad E. Eladawi ◽  
Saad A. A. Sayed ◽  
Hammad T. Elmetwally ◽  
Tamer O. Diab
Keyword(s):  
Silicon Carbide ◽  
Strain Rate ◽  
Gray Level ◽  
Run Length ◽  
Aluminum Silicon Carbide ◽  
Aluminum Silicon

H2O catalysis of aluminum carbide formation in the aluminum-silicon carbide system

1991 ◽  
Vol 6 (6) ◽  
pp. 1131-1134 ◽  
Author(s):  
Benji Maruyama ◽  
Fumio S. Ohuchi
Keyword(s):  
Silicon Carbide ◽  
Aluminum Carbide ◽  
Carbide Formation ◽  
Matrix Composites ◽  
Silicon Carbon ◽  
Aluminum Silicon Carbide ◽  
Silicone Carbide ◽  
Microelectronic Components ◽  
Carbide System ◽  
Aluminum Silicon

Aluminum carbide was found to form catalytically at aluminum-silicon carbide interfaces upon exposure to water vapor. Samples, composed of approximately 2 nm thick layers of Al on SiC, were fabricated and reacted in vacuo, and analyzed using XPS. Enhanced carbide formation was detected in samples exposed to 500 Langmuirs H2O and subsequently reacted for 600 s at 873 K. The cause of the catalysis phenomenon is hypothesized to be the weakening of silicon-carbon bonds caused by very strong bonding of oxygen atoms to the silicon carbide surface. Aluminum carbide formation is of interest because of its degrading effect on the mechanical properties of aluminum/silicone carbide reinforced metal matrix composites, as well as its effect on the electrical properties of aluminum metallizations on silicon carbide layers in microelectronic components.

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