Thermal and Electrical Properties of 3.2 nm Thin Gold Films Coated on Alginate Fiber

2017 ◽  
Vol 10 (1) ◽  
Author(s):  
Hua Dong ◽  
Ranran Chen ◽  
Yongqiang Mu ◽  
Shouting Liu ◽  
Jingkui Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Electron Scattering ◽  
Bulk Material ◽  
Gold Films ◽  
Metallic Thin Films ◽  
Lorenz Number ◽  
Electrical Conductivities ◽  
Thermal And Electrical Properties ◽  
Alginate Fiber

The thermal transport in metallic thin films can be reduced by the electron scattering and there are very little available knowledge that can be used to explain the mechanism. In this work, we characterized the thermal and electron transport of 3.2 nm thin gold films coated on alginate fiber by the transient electrothermal (TET) technique. The results reveal that the thermal and electrical conductivities are reduced significantly from the respective values of bulk material by 76.2% and 93.9%. At the same time, the Lorenz number is calculated as 8.66 × 10−8 W Ω K−2 and it is almost three times increased from the value of bulk material. The intrinsic thermal diffusivity of alginate fiber is 3.25 × 10−7 m2 s−1 and the thermal conductivity is 0.51 W m−1 K−1.

Large Enhancement of Thermal Conductivity and Lorenz Number in Topological Insulator Thin Films

ACS Nano ◽  
2018 ◽  
Vol 12 (2) ◽  
pp. 1120-1127 ◽  
Author(s):  
Zhe Luo ◽  
Jifa Tian ◽  
Shouyuan Huang ◽  
Mithun Srinivasan ◽  
Jesse Maassen ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Topological Insulator ◽  
Lorenz Number ◽  
Large Enhancement

Thermal Transport Properties of Various Thin Films for MEMS Applications

2006 ◽  
Vol 326-328 ◽  
pp. 293-296
Author(s):  
Sun Rock Choi ◽  
Dong Sik Kim ◽  
Sung Hoon Choa
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Transport Properties ◽  
Thermal Transport ◽  
Metallic Thin Films ◽  
Micro Electro Mechanical Systems ◽  
Thermal Transport Properties ◽  
Atomic Force Microscope Measurement ◽  
Evaporation Technique ◽  
Thermal Diffusivities

The thermal properties of thin films, such as thermal conductivity and diffusivity, are important in design and analysis of MEMS (micro electro mechanical systems), particularly in microscale thermal systems and high-power electronic/optoelectronic devices. In the present study, the thermal conductivity and diffusivity of a variety of thin film materials, which are commonly used in MEMS applications, are measured. The samples include Au, Sn, Mo, Al/Ti alloy, AlN, and SiC. The Au sample is deposited by the e-beam evaporation technique while the rest of the metallic samples are deposited by sputtering processes. The AlN and SiC films are also prepared by sputtering processes. In the experiment, the thermal diffusivities of metallic thin films are measured by two independent methods — the AC calorimetric method and photothermal mirage technique. The thermal conductivities of dielectric thin films are measured by the 3 omega technique. The results show that the thermal transport properties of some of the films are significantly smaller than those of the same material in bulk form. Especially, the AlN and SiC thin films exhibit pronounced thermal conductivity reduction because of the size effect. The electrical conductivities of the metallic thin films are measured as well. The results for Au and Sn are consistent with the thermal conductivity, confirming the Wiedmann-Franz law. However, Al/Ti and Mo thin films show considerable deviation from the law. The results are analyzed based on the XRD (X-Ray diffraction) and AFM (Atomic Force Microscope) measurement.

Specular electron scattering in metallic thin films

1999 ◽  
Vol 17 (4) ◽  
pp. 1702 ◽  
Author(s):  
W. F. Egelhoff ◽  
P. J. Chen ◽  
C. J. Powell ◽  
D. Parks ◽  
G. Serpa ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Scattering ◽  
Metallic Thin Films

Electron effective mean free path and thermal conductivity predictions of metallic thin films

2008 ◽  
Vol 92 (17) ◽  
pp. 171910 ◽  
Author(s):  
Jae Sik Jin ◽  
Joon Sik Lee ◽  
Ohmyoung Kwon
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Free Path ◽  
Mean Free Path ◽  
Metallic Thin Films

Thermal Conductivity Measurement of Cu Thin Films using Radiation Heat Exchange Method

2007 ◽  
Vol 1022 ◽  
Author(s):  
Sang Ryu ◽  
Youngman Kim ◽  
Woonam Juhng
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Bulk Material ◽  
Radiation Thermometry ◽  
Conductivity Measurement ◽  
Back Surface ◽  
Exchange Method ◽  
Temperature Distributions ◽  
Substrate Surfaces ◽  
Thermal Conductivities

AbstractA measurement method of thermal conductivities of Cu thin films was devised from the temperature distributions of substrate surfaces. The substrate was prepared to have a prismatic bar shape, and was deposited with Cu thin films using sputtering. Two metal coated surfaces of specimens were brought into contact to maintain the insulated boundary condition. Specimens were heated with constant temperature at both ends. The temperature distributions were measured from the back surface of substrate using a radiation thermometry.The thermal conductivities of Cu thin films were found to be much lower than those of bulk materials. Wiedemann-Franz law could be applied to thin films produced in this study. Thermal conductivity was also estimated from the resistivity of thin film and Lorenz number of bulk material.

Transient Thermoreflectance Measurement of Thermal Conductivity of Nanoscale Silicon Nitride Thin Films

2007 ◽  
Author(s):  
SuYuan Bai ◽  
ZhenAn Tang ◽  
ZhengXing Huang ◽  
JiaQi Wang
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Silicon Nitride ◽  
Bulk Material ◽  
Chemical Vapor ◽  
Interfacial Thermal Resistance ◽  
Silicon Nitride Films ◽  
Pressure Chemical ◽  
Material Values ◽  
Thermal Conductivities

The present work measured the thermal conductivities of the silicon nitride films prepared by lower pressure chemical vapor deposition (LPCVD) with thicknesses ranging from 100 nm to 200 nm. The measurements were made at room temperature using the transient photothermal reflectance technique, which is a non-contacting and non-destructive optical approach. The data measured were fitted by genetic algorithm to get the thermal conductivity of thin films and interfacial thermal resistance simultaneously. The results show that thermal conductivities of these films are lower than corresponding bulk material values. The interfacial thermal resistances are in the order of 10−8 m2K/W. It cannot be neglected for the very thin films. Some comparison and analysis for the results were discussed.

Thermal Conductivity Anisotropy in Phonon Transport of Bi2Te3/Bi0.5Sb1.5Te3 Superlattice Film

2020 ◽  
Vol 15 (4) ◽  
pp. 463-467
Author(s):  
Soo-Young Kang ◽  
No-Won Park ◽  
Won-Yong Lee ◽  
Min-Sung Kang ◽  
Gil-Sung Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Electron Scattering ◽  
Phonon Scattering ◽  
Phonon Transport ◽  
Temperature Dependent ◽  
Conductivity Anisotropy ◽  
Large Anisotropy ◽  
Temperature Dependent Thermal Conductivity ◽  
Thermal Conductivities

Nanoscale superlattice thin films generally exhibit larger phonon and electron scattering at the interface in the direction of the cross-plane of the samples. Therefore, it is very important to further detailed study of especially phonon transport of the superlattice films. Here, we report temperature dependent thermal conductivity anisotropy in phonon transport of Bi2 Te3 /Bi0.5 Sb1.5 Te3 superlattice thin films at 200–500 K. Thermal conductivity of these thin films for in- and cross-plane thermal conductivities were determined to be approximately 0.74 and 0.4 W m–1 K–1 at 200–500 K, respectively, clearly indicating ∼185% suppression in- and cross-plane thermal conductivities of the superlattice thin films with a large anisotropic behavior. Such large anisotropy in the thermal conductivity can be attributed to enhanced phonon scattering occurring at the interface of the Bi2Te3 and Bi0.5Sb1.5Te3 layer.

scholarly journals Synthesis and Characterization of Al- and SnO2-Doped ZnO Thermoelectric Thin Films

Materials ◽  
2021 ◽  
Vol 14 (22) ◽  
pp. 6929
Author(s):  
Giovanna Latronico ◽  
Saurabh Singh ◽  
Paolo Mele ◽  
Abdalla Darwish ◽  
Sergey Sarkisov ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Room Temperature ◽  
Bulk Material ◽  
Laser Deposition ◽  
Sno2 Thin Film ◽  
Order Of Magnitude ◽  
Doped Zno ◽  
Thermoelectric Thin Films

The effect of SnO2 addition (0, 1, 2, 4 wt.%) on thermoelectric properties of c-axis oriented Al-doped ZnO thin films (AZO) fabricated by pulsed laser deposition on silica and Al2O3 substrates was investigated. The best thermoelectric performance was obtained on the AZO + 2% SnO2 thin film grown on silica, with a power factor (PF) of 211.8 μW/m·K2 at 573 K and a room-temperature (300 K) thermal conductivity of 8.56 W/m·K. PF was of the same order of magnitude as the value reported for typical AZO bulk material at the same measurement conditions (340 μW/m·K2) while thermal conductivity κ was reduced about four times.

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