Modeling and Analysis for Thermal Management in Gallium Nitride HEMTs Using Microfluidic Cooling

2016 ◽  
Vol 139 (1) ◽  
Author(s):  
Gunjan Agarwal ◽  
Thomas Kazior ◽  
Thomas Kenny ◽  
Dana Weinstein
Keyword(s):  
Gallium Nitride ◽  
Thermal Management ◽  
Transmission Lines ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Element Analysis ◽  
Modeling And Analysis ◽  
Cooling Channels ◽  
Rf Systems

In this paper, thermal management in GaN (gallium nitride) based microelectronic devices is addressed using microfluidic cooling. Numerical modeling is done using finite element analysis (FEA), and the results for temperature distribution are presented for a system comprising multiple cooling channels underneath GaN high-electron mobility transistors (HEMTs). The thermal stack modeled is compatible for heterogeneous integration with conventional silicon-based CMOS devices. Parametric studies for cooling performance are done over a range of geometric and flow factors to determine the optimal cooling configuration within the specified constraints. A power dissipation of 2–4 W/mm is modeled along each HEMT finger in the proposed configuration. The cooling arrangements modeled here hold promising potential for implementation in high-performance radio-frequency (RF) systems for power amplifiers, transmission lines, and other applications in defense and military.

Self-Screening of the polarized electric field in Wurtzite Gallium Nitride along [0001] direction

2021 ◽  
Author(s):  
Qiu-Ling Qiu ◽  
Shi-Xu Yang ◽  
Qian-Shu Wu ◽  
Cheng-Lang Li ◽  
Qi Zhang ◽  
...  
Keyword(s):  
Electric Field ◽  
Computer Aided Design ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Screening Effect ◽  
White Leds ◽  
Design And Optimization ◽  
Electron Mobility Transistors ◽  
Dimensional Electron Gas

Abstract The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-light-emitting diodes (white LEDs), high electron mobility transistors (HEMTs) and GaN Polarization SuperJunctions. However, the current researches on the polarization mechanism of GaN-based materials are not sufficient. In this paper, we studied the influence of polarization on electric field and energy band characteristics of Ga-face GaN bulk materials by using a combination of theoretical analysis and semiconductor technology computer-aided design (TCAD) simulation. The self-screening effect in Ga-face bulk GaN under ideal and non-ideal conditions is studied respectively. We believe that the formation of high-density two-dimensional electron gas (2DEG) in GaN is the accumulation of screening charges. So that, we also clarify the source and accumulation of the screening charges caused by the GaN self-screening effect in this paper and aim to guide the design and optimization of high-performance GaN-based devices.

Reliability issues of Gallium Nitride High Electron Mobility Transistors

2010 ◽  
Vol 2 (1) ◽  
pp. 39-50 ◽  
Author(s):  
Gaudenzio Meneghesso ◽  
Matteo Meneghini ◽  
Augusto Tazzoli ◽  
Nicolo' Ronchi ◽  
Antonio Stocco ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
Failure Modes ◽  
Deep Level ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Stress Tests ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts

In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The role of temperature in promoting GaN HEMT failure is controversial, and the accelerating degradation factors are largely unknown. The present paper proposes a methodology for the analysis of failure modes and mechanisms of GaN HEMTs, based on (i) DC and RF stress tests accompanied by an (ii) extensive characterization of traps using deep level transient spectroscopy and pulsed measurements, (iii) detailed analysis of electrical characteristics, and (iv) comparison with two-dimensional device simulations. Results of failure analysis using various microscopy and spectroscopy techniques are presented and failure mechanisms observed at the high electric field values typical of the operation of these devices are reviewed.

Wave approach for noise modeling of gallium nitride high electron-mobility transistors

2015 ◽  
Vol 30 (1) ◽  
pp. e2138 ◽  
Author(s):  
Vladica Đorđević ◽  
Zlatica Marinković ◽  
Giovanni Crupi ◽  
Olivera Pronić-Rančić ◽  
Vera Marković ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Noise Modeling ◽  
Wave Approach ◽  
Electron Mobility Transistors

High Performance CuMetallized GaAs HEMTs Processing and Reliability

1998 ◽  
Vol 535 ◽  
Author(s):  
T. Feng ◽  
A. Dimoulas ◽  
N. Strifas ◽  
A. Christou
Keyword(s):  
Elevated Temperature ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Comparable Performance ◽  
Gate Resistance

AbstractAlGaAs/GaAs based high electron mobility transistors (HEMTs) with Cu/Ti metallized gates have been fabricated. Copper gates were used to achieve low gate resistance and to minimize the hydrogen induced device degradation. The DC measurement of the processed AlGaAs/GaAs HEMTs with Cu/Ti gates shows comparable performance to similar Au based GaAs HEMTs. The Cu-based HEMTs were also subjected to elevated temperature testing under 5% H2 –N2 forming gas up to 250°C and 8 hours and no degradation due to hydrogen effects was found.

Guidelines for Reduced-Order Thermal Modeling of Multifinger GaN HEMTs

2020 ◽  
Vol 142 (2) ◽  
Author(s):  
Robert Pearson ◽  
Bikramjit Chatterjee ◽  
Samuel Kim ◽  
Samuel Graham ◽  
Alexander Rattner ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Heat Generation ◽  
Composite Layer ◽  
High Electron Mobility Transistors ◽  
Heat Fluxes ◽  
Analytical Models ◽  
High Electron ◽  
Reduced Order ◽  
Electron Mobility Transistors ◽  
Channel Temperature

Abstract The increasing demand for tightly integrated gallium nitride high electron mobility transistors (HEMT) into electronics systems requires accurate thermal evaluation. While these devices exhibit favorable electrical characteristics, the performance and reliability suffer from elevated operating temperatures. Localized device self-heating, with peak channel and die level heat fluxes of the order of 1 MW cm−2 and 1 kW cm−2, respectively, presents a need for thermal management that is reliant on accurate channel temperature predictions. In this publication, a high-fidelity multiphysics modeling approach employing one-way electrothermal coupling is validated against experimental results from Raman thermometry of a 60-finger gallium nitride (GaN) HEMT power amplifier under a set of direct current (DC)-bias conditions. A survey of commonly assumed reduced-order approximations, in the form of numerical and analytical models, are systematically evaluated with comparisons to the peak channel temperature rise of the coupled multiphysics model. Recommendations of modeling assumptions are made relating to heat generation, material properties, and composite layer discretization for numerical and analytical models. The importance of electrothermal coupling is emphasized given the structural and bias condition effect on the heat generation profile. Discretization of the composite layers, with temperature-dependent thermal properties that are physically representative, are also recommended.

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