Effect of the Back Surface Reflector and Passivated Rear Contacts With PERT Solar Cells

2015 ◽  
Vol 137 (5) ◽  
Author(s):  
Nordine Sahouane ◽  
Abdellatif Zerga ◽  
Zeggai Oussama
Keyword(s):  
Solar Cells ◽  
Light Trapping ◽  
Rear Surface ◽  
Surface Recombination ◽  
Single Layer ◽  
Back Surface ◽  
Physical Factors ◽  
Improved Performance ◽  
Rear Surface Recombination ◽  
Interface Passivation

We use Silvaco software (atlas tcad) simulation to investigate the effect of dielectric layer deposed on rear surface of solar cells passivated emitter and rear totally diffused (PERT). For an improved performance for this solar cell, several physical factors must be considered, such as the light trapping behavior, and the resulting passivation performance and rear surface recombination currents were investigated. Particular consideration will be given to the back surface reflector (BSR) impact on reflection surface, interface passivation, and on the I–V characteristics. Numerical simulations show that using a layer of two dielectrics (SiNx/SiO2) with optical indices and thickness optimized in combination with contacts located (optimized metallization fraction f) at the rear surface allow for energy conversion efficiencies of 21.26% compared to a single layer of dielectric SiN 21.01%.

The Effect of Al-BSF on Seff and Rb in Industrialized Mono-Silicon Solar Cells

2012 ◽  
Vol 472-475 ◽  
pp. 1846-1850
Author(s):  
Shan Shan Dai ◽  
Gao Jie Zhang ◽  
Xiang Dong Luo ◽  
Jing Xiao Wang ◽  
Wen Jun Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Spectral Response ◽  
Short Circuit ◽  
Rear Surface ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Silicon Solar Cells ◽  
Back Surface

In this work, the effect of aluminum back surface field formed by screen printed various amount of Al paste on the effective rear surface recombination velocity (Seff) and the internal rear reflectance coeffeicient (Rb) of commercial mono-silicon solar cells was investigated. We demonstrated the effect of Seffand Rbon the performance of Al-BSF solar cells by simulating them with PC1D. The simulated results showed that the lower Seffcould get higher open circuit voltage (Voc), at the same time, the larger Rbcould get higher short-circuit current (Isc). Experimentally, we investigated the Seffand Rbthrough depositing Al paste with various amount (3.7, 5, 6, and 8 mg/cm2) for fabricating Al-BSF mono-silicon solar cells. Four group cells were characterized by light I-V, spectral response, hemispherical reflectance and scanning electron microscope (SEM) measurements. It was found that, a minimum Seffof 350 cm/s was gotten from the cells with Al paste of 8 mg/cm2, which was extracted by matching quantum efficiency (QE) from 800 nm to 1200 nm with PC1D, and a maximum Rbof 53.5% was obtained from Al paste of 5 mg/cm2by calculating at 1105 nm with PC1D. When the amount of Al paste was higher than 5mg/cm2, there were less Seffand lower Rb. On the other hand, when Al amount was 3.7mg/cm2, it was too little to form a closed BSF. Based on the SEM graphs and simulations with PC1D, a simple explaination was proposed for the experimental results.

Exfoliated ∼25μm Si Foil for Solar Cells with Improved Light-Trapping

2013 ◽  
Vol 1493 ◽  
pp. 51-58 ◽  
Author(s):  
S. Saha ◽  
E. U. Onyegam ◽  
D. Sarkar ◽  
M. M. Hilali ◽  
R. A. Rao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Optical Absorption ◽  
Amorphous Silicon ◽  
Current Density ◽  
Surface Passivation ◽  
Light Trapping ◽  
Rear Surface ◽  
Front Surface ◽  
Absorption Enhancement ◽  
Back Surface

ABSTRACTInvestigation of optical absorption in ∼25μm thick, monocrystalline silicon (Si) substrates obtained from a novel exfoliation technique is done by fabricating solar cells with single heterojunction architecture (without using intrinsic amorphous silicon layer) with diffused back junction and local back contact. The ease of process flow and the rugged and flexible nature of the substrates due to thick metal backing enables use of various light-trapping and optical absorption enhancement schemes traditionally practiced in the industry for thicker (>120μm) substrates. Optical measurement of solar cells using antireflective coating, texturing on both surfaces, and back surface dielectric/metal stack as mirror to reflect the long wavelength light from the back surface show a very low front surface reflectance of 4.6% in the broadband spectrum (300nm-1200nm). The illuminated current voltage (IV) and external quantum efficiency (EQE) measurement of such solar cell shows a high integrated current density of 34.4mA/cm2, which implies significant internal photon reflection. Our best cell with intrinsic amorphous silicon (i-a-Si) layer with only rear surface textured shows an efficiency of 14.9%. EQE data shows improved blue response and current density due to better front surface passivation. Simulations suggest that with optimized light trapping and surface passivation, such thin c-Si cells can reach efficiencies >20%.

scholarly journals Dependence of the Photocurrent of a Schottky-Barrier Solar Cell on the Back Surface Recombination Velocity and Suggestion for a Structure with Improved Performance

2015 ◽  
Vol 2015 ◽  
pp. 1-4 ◽  
Author(s):  
Avigyan Chatterjee ◽  
Ashim Kumar Biswas ◽  
Amitabha Sinha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Schottky Barrier ◽  
Spectral Response ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Back Surface ◽  
Carrier Distribution ◽  
Improved Performance ◽  
Recombination Velocity

Though Schottky-barrier solar cells have been studied extensively previously, not much work has been done recently on these cells, because of the fact that conventional p-n junction silicon solar cells have much higher efficiency and have attracted the attention of most of the researchers. However, the Schottky-barrier solar cells have the advantage of simple and economical fabrication process. In this paper, the effect of back surface recombination velocity on the minority carrier distribution and the spectral response of a Schottky-barrier silicon solar cell have been investigated and, based on this study, a new design of the cell with a back surface field has been suggested, which is expected to give much improved performance.

Enhanced light-trapping in laser-crystallised silicon thin-film solar cells on glass by optimised back surface reflectors

Solar Energy ◽  
2017 ◽  
Vol 150 ◽  
pp. 477-484 ◽  
Author(s):  
Mohd Zamir Pakhuruddin ◽  
Jialiang Huang ◽  
Jonathan Dore ◽  
Sergey Varlamov
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Light Trapping ◽  
Thin Film Solar Cells ◽  
Back Surface ◽  
Silicon Thin Film

Fabrication of silicon nanowire based solar cells using TiO2/Al2O3 stack thin films

MRS Advances ◽  
2018 ◽  
Vol 3 (25) ◽  
pp. 1419-1426 ◽  
Author(s):  
Yasuyoshi Kurokawa ◽  
Ryota Nezasa ◽  
Shinya Kato ◽  
Hisashi Miyazaki ◽  
Isao Takahashi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Silicon Nanowire ◽  
Surface Recombination ◽  
Single Layer ◽  
Minority Carrier Lifetime ◽  
Atomic Layer ◽  
Open Circuit ◽  
Surface Reflectance ◽  
Surface Recombination Rate

ABSTRACTTo improve conversion efficiency of silicon nanowire (SiNW) solar cells, it is very important to reduce the surface recombination rate on the surface of SiNWs, since SiNWs have a large surface area. We tried to cover SiNWs with aluminum oxide (Al2O3) and titanium oxide (TiO2) by atomic layer deposition (ALD), since Al2O3 grown by ALD provides an excellent level of surface passivation on silicon wafers and TiO2 has a higher refractive index than Al2O3, leading to the reduction of surface reflectance. The effective minority carrier lifetime in SiNW arrays embedded in a TiO2/Al2O3 stack layer of 94 μsec was obtained, which was comparable to an Al2O3 single layer. The surface reflectance of SiNW solar cells was drastically decreased below around 5% in all of the wavelength range using the Al2O3/TiO2/Al2O3 stack layer. Heterojunction SiNW solar cells with the structure of ITO/p-type hydrogenated amorphous silicon (a-Si:H)/n-type SiNWs embedded in Al2O3 and TiO2 stack layer for passivation/n-type a-Si:H/back electrode was fabricated, and a typical rectifying property and open-circuit voltage of 356 mV were successfully obtained.

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