High-Efficiency Transient Temperature Calculations for Applications in Dynamic Thermal Management of Electronic Devices

2013 ◽  
Vol 135 (3) ◽  
Author(s):  
Maxat N. Touzelbaev ◽  
Josef Miler ◽  
Yizhang Yang ◽  
Gamal Refai-Ahmed ◽  
Kenneth E. Goodson

The highly nonuniform transient power densities in modern semiconductor devices present difficult performance and reliability challenges for circuit components, multiple levels of interconnections and packaging, and adversely impact overall power efficiencies. Runtime temperature calculations would be beneficial to architectures with dynamic thermal management, which control hotspots by effectively optimizing regional power densities. Unfortunately, existing algorithms remain computationally prohibitive for integration within such systems. This work addresses these shortcomings by formulating an efficient method for fast calculations of temperature response in semiconductor devices under a time-dependent dissipation power. A device temperature is represented as output of an infinite-impulse response (IIR) multistage digital filter, processing a stream of sampled power data; this method effectively calculates temperatures by a fast numerical convolution of the sampled power with the modeled system's impulse response. Parameters such as a steady-state thermal resistance or its extension to a transient regime, a thermal transfer function, are typically used with the assumption of a linearity and time-invariance (LTI) to form a basis for device thermal characterization. These modeling tools and the time-discretized estimates of dissipated power make digital filtering a well-suited technique for a run-time temperature calculation. A recursive property of the proposed algorithm allows a highly efficient use of an available computational resource; also, the impact of all of the input power trace is retained when calculating a temperature trace. A network identification by deconvolution (NID) method is used to extract a time-constant spectrum of the device temperature response. We verify this network extraction procedure for a simple geometry with a closed-form solution. In the proposed technique, the amount of microprocessor clock cycles needed for each temperature evaluation remains fixed, which results in a linear relationship between the overall computation time and the number of temperature evaluations. This is in contrast to time-domain convolution, where the number of clock cycles needed for each evaluation increases as the time window expands. The linear dependence is similar to techniques based on FFT algorithms; in this work, however, use of z-transforms significantly decreases the amount of computations needed per temperature evaluation, in addition to much reduced memory requirements. Together, these two features result in vast improvements in computational throughput and allow implementations of sophisticated runtime dynamic thermal management algorithms for all high-power architectures and expand the application range to embedded platforms for use in a pervasive computing environment.

2008 ◽  
Vol 7 (2) ◽  
pp. 60
Author(s):  
H. Zhao ◽  
J. A. Souza ◽  
J. C. Ordonez

This paper presents a 3D model for the determination of the temperature field in an electromagnetic launcher. The large amounts of energy that are dissipated into the structure of an electromagnetic launcher during short periods of time lead to a complicated thermal management situation. Effective thermal management strategies are necessary in order to maintain temperatures under acceptable limits. This paper constitutes an attempt to determine the temperature response of the launcher. A complete three-dimensional model has been developed. It combines rigid body movement, electromagnetic effects and heat diffusion together. The launcher consists of two parallel rectangular rails and an armature moving between them. Preliminary results show the current distribution on the rail cross-section, the localized resistive heating, and the rail transient temperature response. The simulation results are compared to prior work presented for a 2D geometry by Powell and Zielinski (2008).


Author(s):  
Shane P. Siebenaler ◽  
Gary R. Walter

Leaks from hazardous liquid pipelines can have significant impacts on safety and the environment. The detection of such leaks in their infancy is important to the overall integrity management of pipelines. The traditional means of detecting leaks on this infrastructure typically involve visual inspection or computational monitoring. However, such methods are often inadequate for detecting and locating small discharges that can result in damage to the environment. One potential alternative technology is distributed temperature sensing (DTS). The analytical work in this paper details near-field thermal effects surrounding the pipeline, seasonal and diurnal impacts on temperature as a function of buried depth, and the impact of transient temperature response from batch product operations. The analysis demonstrated that DTS employed on a buried transmission line would be immune from many of these effects and would not generate numerous false alarms due to these conditions. Laboratory testing was conducted on both Brillouin and Raman-based DTS systems; a total of four different manufacturer’s products were utilized. The testing characterized any limitations of such systems as a function of wetted length. The testing demonstrated that such technology could accurately detect small temperature fluctuations over distances exceeding 12 km (7.5 mi) to a location with a resolution of one meter. In addition to sensitivity testing of the systems, the automated alarm systems were tested to ensure that the systems could detect leaks without generating numerous false alarms.


Author(s):  
Peng Wang ◽  
Michael Manno ◽  
Avram Bar-Cohen

Wide bandgap semiconductor technology is expected to have a dramatic impact on radar and communications systems. To take full advantage of the power capabilities and small device sizes of wide bandgap semiconductors, new and novel thermal management solutions, especially for high power density, monolithic microwave integrated circuits (MMICs) are in high demand. In this paper, a quantum-well Si/SiC self-cooling concept for hot spot thermal management at the multi-fingered GaN high electron mobility transistor (HEMTs) in the GaN-on-SiC package is proposed and investigated using a three dimensional (3-D) thermal-electric coupling simulation. The impact of electric current, cooler size, Si/SiC substrate thickness, Si/SiC thermal conductivity, and interfacial parasitic effect on the hot spot cooling is examined and discussed. The preliminary modeling results strongly suggest that self-cooling phenomenon inherent in the quantum-well Si/SiC substrate can be used to remove local high heat flux hot spot on the semiconductor devices.


Author(s):  
Yizhang Yang ◽  
Sridhar Sundaram ◽  
Gamal Refai-Ahmed ◽  
Maxat Touzelbaev

Increase of non-uniform power density and high switching frequency has presented new challenges in predicting transient temperature response to fast-changing power inputs in advanced electronic devices. While the computational effort with direct calculation through the finite element model (FEM) is expensive, various methods of model reduction with drastically improved computing speed have been developed for calculation of dynamic thermal responses of the electronic systems. However, those methods’ still-considerable computational time consumption inhibits their practices in real-time temperature prediction and dynamic thermal management (DTM) applications. This work presents a fast algorithm for predicting temperature evolution in electronic devices subjected to multiple heat source excitations. It utilizes the equivalent thermal RC network for model reductions, and adopts recursive infinite impulse response (IIR) digital filters for accelerated computation in discrete time-domain. The algorithm is validated by comparison to existing convolution integral methods, yielding excellent agreement with several orders of magnitude improvement in computation efficiency. Due to its simplicity in implementation, the algorithm is very suitable for run-time evaluation of temperature response for dynamic power management applications.


2011 ◽  
Vol 24 (21) ◽  
pp. 5521-5537 ◽  
Author(s):  
Lauren E. Padilla ◽  
Geoffrey K. Vallis ◽  
Clarence W. Rowley

Abstract In this paper, the authors address the impact of uncertainty on estimates of transient climate sensitivity (TCS) of the globally averaged surface temperature, including both uncertainty in past forcing and internal variability in the climate record. This study provides a range of probabilistic estimates of the TCS that combine these two sources of uncertainty for various underlying assumptions about the nature of the uncertainty. The authors also provide estimates of how quickly the uncertainty in the TCS may be expected to diminish in the future as additional observations become available. These estimates are made using a nonlinear Kalman filter coupled to a stochastic, global energy balance model, using the filter and observations to constrain the model parameters. This study verifies that model and filter are able to emulate the evolution of a comprehensive, state-of-the-art atmosphere–ocean general circulation model and to accurately predict the TCS of the model, and then apply the methodology to observed temperature and forcing records of the twentieth century. For uncertainty assumptions best supported by global surface temperature data up to the present time, this paper finds a most likely present-day estimate of the transient climate sensitivity to be 1.6 K, with 90% confidence the response will fall between 1.3 and 2.6 K, and it is estimated that this interval may be 45% smaller by the year 2030. The authors calculate that emissions levels equivalent to forcing of less than 475 ppmv CO2 concentration are needed to ensure that the transient temperature response will not exceed 2 K with 95% confidence. This is an assessment for the short-to-medium term and not a recommendation for long-term stabilization forcing; the equilibrium temperature response to this level of CO2 may be much greater. The flat temperature trend of the last decade has a detectable but small influence on TCS. This study describes how the results vary if different uncertainty assumptions are made and shows they are robust to variations in the initial prior probability assumptions.


2010 ◽  
Vol 17 (2) ◽  
Author(s):  
Eduardo Pinheiro ◽  
Octavian Postolache ◽  
Pedro Girão

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tingting Du ◽  
Zixin Xiong ◽  
Luis Delgado ◽  
Weizhi Liao ◽  
Joseph Peoples ◽  
...  

AbstractThermal switches have gained intense interest recently for enabling dynamic thermal management of electronic devices and batteries that need to function at dramatically varied ambient or operating conditions. However, current approaches have limitations such as the lack of continuous tunability, low switching ratio, low speed, and not being scalable. Here, a continuously tunable, wide-range, and fast thermal switching approach is proposed and demonstrated using compressible graphene composite foams. Large (~8x) continuous tuning of the thermal resistance is achieved from the uncompressed to the fully compressed state. Environmental chamber experiments show that our variable thermal resistor can precisely stabilize the operating temperature of a heat generating device while the ambient temperature varies continuously by ~10 °C or the heat generation rate varies by a factor of 2.7. This thermal device is promising for dynamic control of operating temperatures in battery thermal management, space conditioning, vehicle thermal comfort, and thermal energy storage.


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