Enhanced Laser Shock by an Active Liquid Confinement—Hydrogen Peroxide

Author(s):  
Yiliang Liao ◽  
Yingling Yang ◽  
Gary J. Cheng

This letter investigates a unique process to generate enhanced laser shock by applying an active liquid confinement—hydrogen peroxide (H2O2). The mechanism of fast chemical etching-assisted laser ablation is proposed. As a result, comparing with utilizing water as confinement, the efficiency of laser shock peening (LSP) of aluminum alloy 6061 with an active liquid confinement is improved by 150%, and the ablation rate of pulse laser ablation (PLA) of zinc is enhanced by 300%. This method breaks the major limitation of underwater pulsed laser processing caused by the breakdown plasma, with additional mechanisms to generate higher ablation rate and shock pressure under the same laser intensities.

Author(s):  
Yiliang Liao ◽  
Gary J. Cheng

This letter investigates a unique process to generate the enhanced laser shock with a higher pressure by applying an active liquid confinement — hydrogen peroxide (H2O2). The mechanism of fast chemical etching-assisted laser ablation is proposed. As a result, comparing with utilizing water as confinement, the efficiency of underwater laser shock peening of aluminum alloy 6061 is improved by 150%, and the ablation rate of pulse laser ablation of zinc is enhanced by 300%. This method breaks the major limitation of underwater pulsed laser processing caused by the breakdown plasma.


Author(s):  
Xing Zhang ◽  
Bo Mao ◽  
Rebecca Histed ◽  
Yiliang Liao

Abstract Pulsed laser ablation (PLA) under active liquid confinement, also known as chemical etching enhanced pulsed laser ablation (CE-PLA), has emerged as a novel laser processing methodology, which breaks the current major limitation in underwater PLA caused by the breakdown plasma and effectively improves the efficiencies of underwater PLA-based processes, such as laser-assisted nano-/micro-machining and laser shock processing. Despite of experimental efforts, little attention has been paid on CE-PLA process modeling. In this study, an extended two-temperature model is proposed to predict the temporal/spatial evolution of the electron-lattice temperature and the ablation rate in the CE-PLA process. The model is developed with considerations on the temperature-dependent electronic thermal properties and optical properties of the target material. The ablation rate is formulated by incorporating the mutual promotion between ablation and etching processes. The simulation results are validated by the experimental data of CE-PLA of zinc under the liquid confinement of hydrogen peroxide.


2001 ◽  
Vol 73 (2) ◽  
pp. 143-149 ◽  
Author(s):  
E.G. Gamaly ◽  
A.V. Rode ◽  
A. Perrone ◽  
A. Zocco

2019 ◽  
Vol 21 (34) ◽  
pp. 18636-18651 ◽  
Author(s):  
Mark-Robert Kalus ◽  
Riskyanti Lanyumba ◽  
Nerea Lorenzo-Parodi ◽  
Maik A. Jochmann ◽  
Klaus Kerpen ◽  
...  

The decomposition of water and the formation of molecular hydrogen, oxygen, and hydrogen peroxide during laser ablation of redox-active materials is systematically studied and related to the ablation rate and oxidation degree of the nanoparticles.


2020 ◽  
Vol 52 (4) ◽  
Author(s):  
I. Shiganov ◽  
D. Melnikov ◽  
A. Misyurov ◽  
M. Melnikova ◽  
D. Shtereveria ◽  
...  

2016 ◽  
Vol 57 (10) ◽  
pp. 1776-1783 ◽  
Author(s):  
Tomoki Takata ◽  
Manabu Enoki ◽  
Pornthep Chivavibul ◽  
Akinori Matsui ◽  
Yuji Kobayashi

Author(s):  
Ze Liu ◽  
Benxin Wu ◽  
Rong Xu ◽  
Kejie Zhao ◽  
Yung C. Shin

Previous investigations on “double-pulse” nanosecond (ns) laser drilling reported in the literature typically utilize double pulses of equal or similar pulse energies. In this paper, “double-pulse” ns laser drilling using double pulses with energies differing by more than ten times has been studied, where both postprocess workpiece characterizations and in situ time-resolved shadowgraph imaging observations have been performed. A very interesting physical phenomenon has been discovered under the studied conditions: the “double-pulse” ns laser ablation process, where the low-energy pulse precedes the high-energy pulse (called “low-high double-pulse” laser ablation) by a suitable amount of time, can produce significantly higher ablation rates than “high-low double-pulse” or “single-pulse” laser ablation under a similar laser energy input. In particular, “low-high double-pulse” laser ablation at a suitable interpulse separation time can drill through a ∼0.93 mm thick aluminum 7075 workpiece in less than 200 pulse pairs, while “high-low double-pulse” or “single-pulse” laser ablation cannot drill through the workpiece even using 1000 pulse pairs or pulses, respectively. This indicates that “low-high double-pulse” laser ablation has led to a significantly enhanced average ablation rate that is more than five times those for “single-pulse” or “high-low double-pulse” laser ablation. The fundamental physical mechanism for the ablation rate enhancement has been discussed, and a hypothesized explanation has been given.


Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


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