Mechanisms of ablation-rate decrease in multiple-pulse laser ablation

2001 ◽  
Vol 73 (2) ◽  
pp. 143-149 ◽  
Author(s):  
E.G. Gamaly ◽  
A.V. Rode ◽  
A. Perrone ◽  
A. Zocco
Keyword(s):  
Laser Ablation ◽  
Pulse Laser ◽  
Pulse Laser Ablation ◽  
Ablation Rate ◽  
Multiple Pulse ◽  
Rate Decrease

scholarly journals Direct observation of structure-assisted filament splitting during ultrafast multiple-pulse laser ablation

2019 ◽  
Vol 27 (7) ◽  
pp. 10050 ◽  
Author(s):  
Feifei Wang ◽  
Changji Pan ◽  
Jingya Sun ◽  
Qingsong Wang ◽  
Yongfeng Lu ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulse Laser ◽  
Direct Observation ◽  
Pulse Laser Ablation ◽  
Multiple Pulse

scholarly journals Study on real-time z-scanning of multiple-pulse laser ablation of metal applied in roll-printed electronics

2021 ◽  
Vol 11 (2) ◽  
pp. 509
Author(s):  
Le Phuong Hoang ◽  
Phuong Thao Nguyen ◽  
Thi Kim Cuc Nguyen ◽  
Toan Thang Vu ◽  
Xuan Binh Cao
Keyword(s):  
Laser Ablation ◽  
Real Time ◽  
Pulse Laser ◽  
Printed Electronics ◽  
Pulse Laser Ablation ◽  
Multiple Pulse

Size control of nanoparticles by multiple-pulse laser ablation

2017 ◽  
Vol 402 ◽  
pp. 330-335 ◽  
Author(s):  
Jiaxin Yu ◽  
Junyi Nan ◽  
Heping Zeng
Keyword(s):  
Laser Ablation ◽  
Pulse Laser ◽  
Pulse Laser Ablation ◽  
Size Control ◽  
Multiple Pulse

scholarly journals Microhole Drilling by Double Laser Pulses With Different Pulse Energies

2018 ◽  
Vol 140 (9) ◽  
Author(s):  
Ze Liu ◽  
Benxin Wu ◽  
Rong Xu ◽  
Kejie Zhao ◽  
Yung C. Shin
Keyword(s):  
Laser Ablation ◽  
Pulse Laser ◽  
Pulse Laser Ablation ◽  
Single Pulse ◽  
Ablation Rate ◽  
Laser Drilling ◽  
Double Pulse ◽  
Energy Pulse ◽  
Pulse Energies ◽  
Double Pulse Laser

Previous investigations on “double-pulse” nanosecond (ns) laser drilling reported in the literature typically utilize double pulses of equal or similar pulse energies. In this paper, “double-pulse” ns laser drilling using double pulses with energies differing by more than ten times has been studied, where both postprocess workpiece characterizations and in situ time-resolved shadowgraph imaging observations have been performed. A very interesting physical phenomenon has been discovered under the studied conditions: the “double-pulse” ns laser ablation process, where the low-energy pulse precedes the high-energy pulse (called “low-high double-pulse” laser ablation) by a suitable amount of time, can produce significantly higher ablation rates than “high-low double-pulse” or “single-pulse” laser ablation under a similar laser energy input. In particular, “low-high double-pulse” laser ablation at a suitable interpulse separation time can drill through a ∼0.93 mm thick aluminum 7075 workpiece in less than 200 pulse pairs, while “high-low double-pulse” or “single-pulse” laser ablation cannot drill through the workpiece even using 1000 pulse pairs or pulses, respectively. This indicates that “low-high double-pulse” laser ablation has led to a significantly enhanced average ablation rate that is more than five times those for “single-pulse” or “high-low double-pulse” laser ablation. The fundamental physical mechanism for the ablation rate enhancement has been discussed, and a hypothesized explanation has been given.

Silicon Thinning using Ultra-Short Pulse Laser Ablation

2004 ◽  
Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Sample Preparation ◽  
Pulse Laser ◽  
Pulse Laser Ablation ◽  
Short Pulse ◽  
Special Care ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.

Numerical modeling of ultrashort-pulse laser ablation of silicon

2009 ◽  
Vol 255 (17) ◽  
pp. 7605-7609 ◽  
Author(s):  
D.P. Korfiatis ◽  
K.-A. Th. Thoma ◽  
J.C. Vardaxoglou
Keyword(s):  
Numerical Modeling ◽  
Laser Ablation ◽  
Pulse Laser ◽  
Ultrashort Pulse ◽  
Pulse Laser Ablation ◽  
Ultrashort Pulse Laser
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