A Mechanics of Materials Model for the Creping Process

2011 ◽  
Vol 133 (5) ◽  
Author(s):  
Melur K. Ramasubramanian ◽  
Zhaohui Sun ◽  
Guang Chen
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Shear Strength ◽  
Low Density ◽  
High Quality ◽  
Mechanics Of Materials ◽  
Angle Data ◽  
Materials Failure ◽  
Drying Cylinder ◽  
Adhesive Shear Strength

The manufacture of low density paper such as tissue and towel utilizes the creping process that consists of adhesively bonding the paper in wet state onto the surface of a smooth drying cylinder and scraping it off with a blade once dried. In this paper, a mechanics of materials description of the creping process is presented. Based upon previous experimental observations, the mechanism of this creping process is proposed as a periodic debonding with a strength-of-materials failure criterion applied and buckling sequence of an elastic thin film. Numerical calculations show results consistent with experimental data and known industrial observations. Crepe wavelength versus creping angle data from experiments can be satisfactorily reproduced by a reasonable set of values for input parameters to the model. Parametric study shows the adhesive shear strength and the sheet stiffness most significantly affect the crepe wavelength and the creping force. The model provides guidance in understanding and optimizing the creping process to produce high quality products.

Scanning Tunneling Microscopy Study of Single Domain β-SiC(100) Surfaces: Growth and Morphology

1998 ◽  
Vol 05 (01) ◽  
pp. 207-211 ◽  
Author(s):  
F. Semond ◽  
L. Douillard ◽  
P. Soukiassian ◽  
A. Mayne ◽  
G. Dujardin ◽  
...  
Keyword(s):  
Thin Film ◽  
Scanning Tunneling Microscopy ◽  
Microscopy Study ◽  
Single Domain ◽  
Scanning Tunneling ◽  
Low Density ◽  
Tunneling Microscopy ◽  
High Quality ◽  
Scanning Tunneling Microscopy Study

We investigate single domain β-SiC(100) thin film surfaces epitaxially grown on a vicinal (4°) Si(100) surface by atom-resolved (filled and empty states) scanning tunneling microscopy (STM). Contrary to previous beliefs, we observe high quality surfaces having a low density of defects. The β-SiC(100)-(3×2) surface, which is a Si-rich surface, is achieved by sequences of Si deposition and surface annealings. This results in the growth and coalescence of large Si islands and/or vacancies islands having the 3×2 array. Our results indicate the formation of asymmetric Si-Si dimers all tilted in the same direction and forming rows in a 3×2 arrangement at a 1/3 Si mon/layer coverage.

Quantitative defect studies in semiconductor TEM samples prepared by low angle ion milling

1995 ◽  
Vol 53 ◽  
pp. 512-513
Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf
Keyword(s):  
Sample Preparation ◽  
Milling Time ◽  
High Density ◽  
Low Density ◽  
Ion Milling ◽  
High Quality ◽  
Variable Angle ◽  
Major Disadvantage ◽  
Induced Defects

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).

scholarly journals Current Noise in Thick and Thin Film Resistors

1983 ◽  
Vol 10 (2-3) ◽  
pp. 81-85 ◽  
Author(s):  
S. Demolder ◽  
A. Van Calster ◽  
M. Vandendriessche
Keyword(s):  
Thin Film ◽  
Thick Film ◽  
Measured Data ◽  
Measuring Circuit ◽  
Current Noise ◽  
High Quality ◽  
Thin Film Resistors

In this paper a sensitive measuring circuit is described for the measurement of current noise on high quality thin and thick film resistors. Measured data on resistors are presented and analysed.

Solid-state reaction process for high-quality organometallic halide perovskite thin film

2021 ◽  
Vol 227 ◽  
pp. 111014
Author(s):  
Chien-Chung Hsu ◽  
Sheng-Min Yu ◽  
Kun-Mu Lee ◽  
Chuan-Jung Lin ◽  
Hao-Chien Cheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reaction ◽  
Reaction Process ◽  
High Quality ◽  
Halide Perovskite

Parametric study of multi-story, perforated, partially grouted masonry walls subjected to in-plane cyclic actions

2020 ◽  
Author(s):  
Klaus Medeiros ◽  
Kyle Chavez ◽  
Fernando S. Fonseca ◽  
Guilherme Parsekian ◽  
Nigel G. Shrive
Keyword(s):  
Experimental Data ◽  
Shear Strength ◽  
Aspect Ratio ◽  
Load Capacity ◽  
Axial Stress ◽  
Reinforcement Ratio ◽  
Masonry Walls ◽  
Finite Element Models ◽  
Initial Stiffness ◽  
Vertical Reinforcement

Finite element models were developed to assess the influence of several parameters on the load capacity, deflection, and initial stiffness of multi-story, partially grouted masonry walls with openings. The base model was validated with experimental data from three walls. The analyses indicated that the load capacity of masonry walls was considerably sensitive to the ungrouted and grouted masonry strengths and mortar shear strength; moderately sensitive to the vertical reinforcement ratio and aspect ratio; slightly sensitive to the axial stress; and almost insensitive to the opening size, reinforcement spacing, and horizontal reinforcement ratio. The deflection of the walls had well-defined correlations with the masonry strength, vertical reinforcement, axial stress and aspect ratio. The initial stiffness was especially sensitive to the axial stress and the aspect ratio, but weakly correlated with the opening size, and the spacing and size of the reinforcement.

Indentation Technique to Investigate Elastic Moduli of Thin Films on Substrates

1988 ◽  
Vol 130 ◽  
Author(s):  
D. S. Stone ◽  
T. W. Wu ◽  
P.-S. Alexopoulos ◽  
W. R. Lafontaine
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Thin Films ◽  
Closed Form ◽  
Elastic Moduli ◽  
Depth Sensing ◽  
Indentation Technique ◽  
Average Displacement ◽  
Elasticity Solutions ◽  
Poor Adhesion

AbstractClosed-form elasticity solutions are introduced, that predict the average displacement beneath square and triangular, uniformly loaded areas at the surface of a bilayer. The solutions aid in the application of depth-sensing indentation techniques for measuring thin film elastic moduli. The elasticity solutions agree closely with experimental data of Al, Si, 1 μm Al on Si, and 2 μm Cr on Si. The case of poor adhesion between the film and substrate is briefly examined.

Detection Limit of Large Area Id Thin Film Position Sensitive Detectors Based in a-Si:H P.I.N. Diodes

1995 ◽  
Vol 377 ◽  
Author(s):  
R. Martins ◽  
G. Lavareda ◽  
F. Soares ◽  
E. Fortunato
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Steady State ◽  
Detection Limit ◽  
Large Area ◽  
Position Sensitive ◽  
Position Sensitive Detectors

ABSTRACTThe aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H ID Thin Film Position Sensitive Detectors (ID TFPSD). The experimental data recorded in ID TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

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