A Nernst Effect Power Generator

1963 ◽  
Vol 85 (1) ◽  
pp. 41-48 ◽  
Author(s):  
S. W. Angrist
Keyword(s):  
Temperature Difference ◽  
Indium Antimonide ◽  
Energy Gap ◽  
Electrical Potential ◽  
Direct Conversion ◽  
Magnetic Flux Density ◽  
Nernst Effect ◽  
Small Energy ◽  
Power Generator ◽  
Effect Generator

The direct conversion of heat to electricity by means of the Nernst effect is analyzed. The Nernst effect is the creation of an electrical potential perpendicular to both an applied temperature difference and an applied magnetic field. The effect is pronounced in semiconductors which have large mobility, large mobility ratio, and relatively small energy gap. Indium antimonide exhibits theoretically the best performance to date. A Nernst effect generator using indium antimonide experiencing an applied temperature difference of 300 deg K and a magnetic flux density of 10 kilogauss would have a thermal efficiency of about 1.6 percent and a power density of 10 watts per cubic centimeter.

The Role of Rare Earths in Narrow Energy Gap Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
D.L. Partin ◽  
J. Heremans ◽  
D.T. Morelli ◽  
C.M. Thrush
Keyword(s):  
Rare Earth ◽  
Band Gap ◽  
Indium Antimonide ◽  
Energy Band ◽  
Energy Gap ◽  
Lattice Parameter ◽  
Molecular Beam Epitaxy Growth ◽  
Lead Chalcogenide ◽  
Energy Band Gap

ABSTRACTNarrow energy band gap semiconductors are potentially useful for various devices, including infrared detectors and diode lasers. Rare earth elements have been introduced into lead chalcogenide semiconductors using the molecular beam epitaxy growth process. Europium and ytterbium increase the energy band gap, and nearly lattice-matched heterojunctions have been grown. In some cases, valence changes in the rare earth element cause doping of the alloy. Some initial investigations of the addition of europium to indium antimonide will also be reported, including the variation of lattice parameter and optical transmission with composition and a negative magnetoresistance effect.

scholarly journals Two-photon-excited ultralong organic room temperature phosphorescence by dual-channel triplet harvesting

2019 ◽  
Vol 10 (31) ◽  
pp. 7352-7357 ◽  
Author(s):  
Zhu Mao ◽  
Zhan Yang ◽  
Chao Xu ◽  
Zongliang Xie ◽  
Long Jiang ◽  
...  
Keyword(s):  
Room Temperature ◽  
Energy Gap ◽  
Infrared Laser ◽  
Concentration Quenching ◽  
Ambient Conditions ◽  
Room Temperature Phosphorescence ◽  
Small Energy ◽  
Two Photon ◽  
Dual Channel ◽  
Triplet Harvesting

Small energy gap boosts dual-channel triplet harvesting via TADF and UOP, which suppresses long-lived triplet concentration quenching. An infrared laser (808 nm) is able to induce persistent emission under ambient conditions.

Thermal Effect on Microchannel Electro-osmotic Flow With Consideration of Thermodiffusion

2015 ◽  
Vol 137 (9) ◽  
Author(s):  
Yi Zhou ◽  
Yongqi Xie ◽  
Chun Yang ◽  
Yee Cheong Lam
Keyword(s):  
Charge Density ◽  
Thermal Effect ◽  
Temperature Difference ◽  
Electrical Potential ◽  
Ionic Concentration ◽  
Free Charge ◽  
Regular Perturbation ◽  
Osmotic Flow ◽  
Ionic Distribution ◽  
Electro Osmotic Flow

Electro-osmotic flow (EOF) is widely used in microfluidic systems. Here, we report an analysis of the thermal effect on EOF under an imposed temperature difference. Our model not only considers the temperature-dependent thermophysical and electrical properties but also includes ion thermodiffusion. The inclusion of ion thermodiffusion affects ionic distribution, local electrical potential, as well as free charge density, and thus has effect on EOF. In particular, we formulate an analytical model for the thermal effect on a steady, fully developed EOF in slit microchannel. Using the regular perturbation method, we solve the model analytically to allow for decoupling several physical mechanisms contributing to the thermal effect on EOF. The parametric studies show that the presence of imposed temperature difference/gradient causes a deviation of the ionic concentration, electrical potential, and electro-osmotic velocity profiles from their isothermal counterparts, thereby giving rise to faster EOF. It is the thermodiffusion induced free charge density that plays a key role in the thermodiffusion induced electro-osmotic velocity.

Delafossite Nanoparticle as New Functional Materials: Advances in Energy, Nanomedicine and Environmental Applications

2015 ◽  
Vol 832 ◽  
pp. 28-53 ◽  
Author(s):  
Hani Nasser Abdelhamid
Keyword(s):  
Active Sites ◽  
Energy Gap ◽  
Functional Materials ◽  
Oxidation States ◽  
Structure Modification ◽  
Small Energy ◽  
Bioactive Materials ◽  
Promising Application ◽  
Electrochemical Devices ◽  
Future Status

Recently, numerous delafossite oxides in nanoscale have been reported for diverse applications. The present review summarized the recent overall views of delafossite nanoparticles in diverse applications such as energy, catalysis, photocatalysis, nanomedicine, sensors, electrochemical devices and environmental concerns. Delafossite nanoparticles possess unique features such as different and wide chemical composition, large surface area, small energy gap, ability for further functionalization, possess dual-active sites with different oxidation states (A+and M3+), and eager for doping with various species with feasibility to undergo structure modification. Thus, they provided promising application such as solar cell, photocatalysis, hydrogen production, bioactive materials, separation purposes and others. Pros, cons, current and future status were also reviewed.

MERCURY-BASED SUPERCONDUCTORS WITH QUASI-NORMAL OCCUPANCY

1995 ◽  
Vol 09 (18) ◽  
pp. 1175-1184
Author(s):  
M. MORENO ◽  
R.M. MÉNDEZ-MORENO ◽  
S. OROZCO ◽  
M.A. ORTÍZ
Keyword(s):  
Transition Temperature ◽  
Fermi Surface ◽  
Weak Coupling ◽  
Cuprate Superconductors ◽  
Energy Gap ◽  
Oxide Superconductors ◽  
Coupling Constant ◽  
Effective Coupling ◽  
Small Energy ◽  
Copper Oxide Superconductors

A model with anomalous occupancy is applied to Hg-based cuprate superconductors. The anomaly consists of a small energy gap near the Fermi surface, the scale of the gap anomaly is of order of the cutoff (v.g. Debye) energy. Values of the anomalous occupancy parameters for Hg-based superconductors are obtained for different values of the ratio R and the effective coupling constant, within the weak coupling. As these materials have the highest transition temperature known for layered copper-oxide superconductors, they serve as a new testing ground for various proposed models.

Magnetic Impurity in Insulators with Small Energy Gap

1993 ◽  
Vol 62 (12) ◽  
pp. 4364-4372 ◽  
Author(s):  
Jun Ogura ◽  
Tetsuro Saso
Keyword(s):  
Energy Gap ◽  
Magnetic Impurity ◽  
Small Energy
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