The Role of Rare Earths in Narrow Energy Gap Semiconductors

1990 ◽  
Vol 216 ◽  
Author(s):  
D.L. Partin ◽  
J. Heremans ◽  
D.T. Morelli ◽  
C.M. Thrush
Keyword(s):  
Rare Earth ◽  
Band Gap ◽  
Indium Antimonide ◽  
Energy Band ◽  
Energy Gap ◽  
Lattice Parameter ◽  
Molecular Beam Epitaxy Growth ◽  
Lead Chalcogenide ◽  
Energy Band Gap

ABSTRACTNarrow energy band gap semiconductors are potentially useful for various devices, including infrared detectors and diode lasers. Rare earth elements have been introduced into lead chalcogenide semiconductors using the molecular beam epitaxy growth process. Europium and ytterbium increase the energy band gap, and nearly lattice-matched heterojunctions have been grown. In some cases, valence changes in the rare earth element cause doping of the alloy. Some initial investigations of the addition of europium to indium antimonide will also be reported, including the variation of lattice parameter and optical transmission with composition and a negative magnetoresistance effect.

The Role of Samarium Ion in Optical Properties of Magnesium Tellurite Glass Embedded with Silver Nanoparticles

2015 ◽  
Vol 1107 ◽  
pp. 460-465
Author(s):  
M.Y. Nurulhuda ◽  
M.R. Sahar
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Tellurite Glass ◽  
Urbach Energy ◽  
Energy Band Gap ◽  
Optical Energy ◽  
Optical Energy Band Gap ◽  
Absorption Studies ◽  
Uv Visible

A series of tellurite glass based on composition (89.6-x)TeO2-10MgO-xSm2O3-0.4AgCl where 0.2x1.0 have successfully been prepared by melt-quenching technique. The optical behaviour has been examined as a function of Sm2O3 content by using UV-Visible Spectroscopy in the range of 200-900 nm. The absorption studies revealed that the indirect and direct optical energy band gap is in the range of 2.81-3.11 eV and 3.16-3.45 eV, respectively. Meanwhile, Urbach energy, E is in between 0.18-0.24 eV. The increasing in samarium ion up to 0.4 mol% of Sm2O3 result in an increment of optical energy band gap, but gradually decreases beyond 0.4 mol%. All the results will be discussed with respect to Sm2O3 content.

The effect of elastic strain on energy band gap and lattice parameter in III‐V compounds

1978 ◽  
Vol 49 (11) ◽  
pp. 5523-5529 ◽  
Author(s):  
G. H. Olsen ◽  
C. J. Nuese ◽  
R. T. Smith
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Elastic Strain ◽  
Lattice Parameter ◽  
Energy Band Gap

scholarly journals Electronic Properties of WS2/WSe2 Heterostructure Containing Te Impurity: The Role of Substituting Position

2019 ◽  
Vol 18 (03n04) ◽  
pp. 1940007
Author(s):  
A. V. Krivosheeva ◽  
V. L. Shaposhnikov ◽  
V. E. Borisenko ◽  
J.-L. Lazzari
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Energy Band ◽  
Two Dimensional ◽  
Energy Band Gap ◽  
Theoretical Simulation ◽  
Impurity Position

An impact of positions of Te atoms substituting W atoms in two-dimensional WS2/WSe2 heterostructures on their electronic properties is investigated by theoretical simulation. The substitution of W by Te tends to reduce the energy band gap and can lead to metallic properties depending on the impurity position and concentration.

scholarly journals Temperature dependence of the energy band gap of CuSi2P3 semiconductor using PSOPW method

2018 ◽  
Vol 36 (4) ◽  
pp. 553-562 ◽  
Author(s):  
T.G. Abdullah ◽  
S.A. Sami ◽  
M.S. Omar
Keyword(s):  
Temperature Dependence ◽  
Temperature Effect ◽  
Band Gap ◽  
Energy Band ◽  
Energy Gap ◽  
Lattice Vibration ◽  
Energy Band Gap ◽  
Linear Region ◽  
Total Temperature ◽  
Lattice Dilation

AbstractTheoretical formalism based on the orthogonalized plane wave method supplemented by a potential scaling scheme was used to predict the temperature dependence of energy gap of CuSi2P3 semiconductor. A computer code in Pascal was used to perform the variation of fundamental energy gap with temperature in the range of 150 K to 800 K. The dependence of energy gap on temperature for lattice dilation contribution, lattice vibration contribution and total temperature effect were performed separately. The results revealed that, as temperature increases, the top of the valence band and the bottom of the conduction band increase, while the energy band gap decreases. Generally, at low temperatures, the energy gap varies slowly and exhibits a nonlinear dependence and approaches linearity as temperature increases. The calculated energy gap of CuSi2P3 at T = 300 K is 0.4155 eV. The temperature coefficients in the linear region due to lattice dilation contribution, lattice vibration contribution and total temperature effect were calculated as –1.101 × 10−5 eV/K, –1.637 × 10−4 eV/K and –1.7523 × 10−4 eV/K, respectively. Also, the ratio of temperature coefficient of the energy gap due to LV contribution to its value and LD contribution in the linear region is equal to 14.868. That ratio is compared to those of CuGe2P3 and III-V compounds, where those of the latter show a systematic change with Eg. Moreover, the Eg of all the compounds shows a quadratic dependence on the inverse of mean bond length.

Lattice parameter and energy band gap of cubic AlxGayIn1−x−yN quaternary alloys

2003 ◽  
Vol 83 (5) ◽  
pp. 890-892 ◽  
Author(s):  
M. Marques ◽  
L. K. Teles ◽  
L. M. R. Scolfaro ◽  
J. R. Leite ◽  
J. Furthmüller ◽  
...  
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Lattice Parameter ◽  
Energy Band Gap ◽  
Quaternary Alloys

Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

2009 ◽  
Vol 610-613 ◽  
pp. 598-603
Author(s):  
Lan Zhao ◽  
Zheng Xiong Lu ◽  
Cai Jing Cheng ◽  
De Gang Zhao ◽  
Jian Jun Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Energy Band ◽  
Lattice Strain ◽  
Energy Gap ◽  
Lattice Mismatch ◽  
Lattice Relaxation ◽  
Epitaxial Thin Films ◽  
Energy Band Gap ◽  
Bowing Parameter

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

Breaking through the "3.0 eV wall" of energy band gap in mid-infrared nonlinear optical rare earth chalcogenides by charge-transfer engineering

2021 ◽  
Author(s):  
Dajiang Mei ◽  
Wangzhu Cao ◽  
Naizheng Wang ◽  
Xing-Xing Jiang ◽  
Jun Zhao ◽  
...  
Keyword(s):  
Rare Earth ◽  
Charge Transfer ◽  
Band Gap ◽  
Energy Band ◽  
Nonlinear Optical ◽  
Molecular Design ◽  
Energy Band Gap ◽  
Mid Infrared ◽  
Challenging Issue ◽  
Nlo Response

Increasing the energy band gap under the premise to maintain a large nonlinear optical (NLO) response is a challenging issue for the exploration and molecular design of mid-infrared nonlinear optical...

scholarly journals No Resistive Normal Electrons in Beginning Superconducting States

Mathematics ◽  
2020 ◽  
Vol 8 (9) ◽  
pp. 1512
Author(s):  
Changho Seo ◽  
Seongsoo Cho ◽  
Je Huan Koo
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap

We investigate why normal electrons in superconductors have no resistance. Under the same conditions, the band gap is reduced to zero as well, but normal electrons at superconducting states are condensed into this virtual energy band gap.

Energy Band Gap Studies of CdS Nanomaterials

2008 ◽  
Vol 3 ◽  
pp. 97-102 ◽  
Author(s):  
Dinu Patidar ◽  
K.S. Rathore ◽  
N.S. Saxena ◽  
Kananbala Sharma ◽  
T.P. Sharma
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Energy Band ◽  
Chemical Method ◽  
Optical Absorption Spectroscopy ◽  
Cds Nanoparticles ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
X Ray ◽  
Simple Chemical

The CdS nanoparticles of different sizes are synthesized by a simple chemical method. Here, CdS nanoparticles are grown through the reaction of solution of different concentration of CdCl2 with H2S. X-ray diffraction pattern confirms nano nature of CdS and has been used to determine the size of particle. Optical absorption spectroscopy is used to measure the energy band gap of these nanomaterials by using Tauc relation. Energy band gap ranging between 3.12 eV to 2.47 eV have been obtained for the samples containing the nanoparticles in the range of 2.3 to 6.0 nm size. A correlation between the band gap and size of the nanoparticles is also established.

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