scholarly journals Miniature Implantable Pressure Sensors for Medical Applications

2010 ◽  
Vol 4 (2) ◽  
Author(s):  
Robert Stone ◽  
FranÃois Gardien ◽  
Antoine Filipe ◽  
Christian Pisella ◽  
Alain Roggi ◽  
...  
Keyword(s):  
Power Consumption ◽  
Fluid Pressure ◽  
Pressure Sensors ◽  
Form Factors ◽  
Full Scale ◽  
Absolute Pressure ◽  
Sensing Element ◽  
Sigma Delta ◽  
Temperature Range ◽  
Trade Offs

Pressure sensors are requisite for many medical implantable devices to monitor physiological pressures or fluid pressure and flow from a subsystem. Size, power consumption, accuracy, sensitivity, stability, and biocompatibility are all key considerations in the design and fabrication of such sensors. Conventional designs, based on piezoresistive technologies, are power consuming with significant drift and temperature error, whereas capacitive solutions are often cumbersome when packaged for biocompatibility. Tronics Microsystems has developed absolute pressure sensors, which achieve the benefits of both technologies. Miniaturization is achieved using a MEMS sensing element and a multifunction ASIC with small form factors. Low power consumption, low drift, high resolution, and waveform capture capability are obtained by using a capacitive MEMS coupled with a sigma-delta, direct capacitance to digital converter. Biocompatibility is achieved with grade II titanium packaging in two form factors (“tubular” or “pancake”) for incorporation into various applications. These sensors have been fabricated, calibrated, and tested extensively over physiologic temperature ranges. The design has achieved power consumption lower than 500 ÂμW at 100 Hz and a drift lower than 0.5% full scale per year. An accuracy of +/−1% full scale, over the temperature range is obtained by on-ASIC nonlinearity and temperature compensation. The two packaging configurations allow analysis of the trade-offs on the temperature range, sensitivity, volume, sterilization, etc. Different feed-through materials permit optimization of the form factors for the tube and the flat sensor and wired or wireless communication.

scholarly journals Performance Evaluation of Honeywell Silicon Piezoresistive Pressure Transducers for Oceanographic and Limnological Measurements*

2005 ◽  
Vol 22 (12) ◽  
pp. 1933-1939 ◽  
Author(s):  
Vijay Kumar ◽  
Antony Joseph ◽  
R. G. Prabhudesai ◽  
S. Prabhudesai ◽  
Surekha Nagvekar ◽  
...  
Keyword(s):  
Temperature Sensitivity ◽  
Pressure Range ◽  
Effective Means ◽  
Pressure Sensors ◽  
Zero Point ◽  
Full Scale ◽  
Absolute Pressure ◽  
Pressure Transducers ◽  
Temperature Range ◽  
The Mean

Abstract Simultaneous calibrations of three temperature-compensated piezoresistive ruggedized precision “absolute” pressure transducers (Honeywell model PPTR0040AP5VB-BD), which have been designed specially for long-term coastal oceanographic and limnological measurements, have been carried out at four differing temperatures (10°, 20°, 30°, and 40°C) to evaluate their suitability for such applications. The full-scale pressure range of these shallow water absolute pressure sensors is ≈ 2800 hPa (equivalent to water depth of ≈ 18 m). Measurement results have been used to examine the transducers’ performance indicators, such as zero-point offset, accuracy, linearity, hysteresis, temperature sensitivity, and slope. Differing piezoresistive ruggedized precision absolute pressure transducers (PPTRs) exhibited differing zero-point offset values, ranging from 2 to −79 hPa. Temperature sensitivity of zero-point offset was ≈0.3 hPa over the temperature range 10°–40°C. The mean hysteresis over the full-scale absolute pressure range (≈2800 hPa) varied from approximately 2 to 8 hPa over the temperature range 10°–40°C. The slope of the least squares–fitted linear graph (taking the mean of ascending and descending pressures) was close to the ideal value of unity (deviation from 1 over the temperature range 10°–40°C was in the range of −0.001 to +0.005). Linearity was excellent, its mean over the entire pressure range being between ≈ −0.006% and 0.008% of full-scale (FS) over the above temperature range. The worst performance was exhibited at input pressures below ≈1500 hPa. Zero-point offset has played a significant role in deteriorating the accuracy of the PPTR, the mean accuracy (within ≈0.1% and −5%) having been exhibited by those transducers having offsets of 2 and −79 hPa, respectively. The mean accuracy exhibited temperature sensitivity of ≈1% in the range 10°–20°C and negligible sensitivity beyond 20°C. Use of a calibration equation significantly improved the mean static accuracy obtainable from the PPTR, to between −0.04% and 0.01% of FS. Evaluation results have indicated that a suitably calibrated temperature-compensated Honeywell PPTR provides an alternate cost-effective means for pressure measurements for coastal oceanographic and limnological studies.

scholarly journals Fabry-Perot Pressure Sensors Based on Polycrystalline Diamond Membranes

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1780
Author(s):  
Sara Pettinato ◽  
Daniele Barettin ◽  
Vadim Sedov ◽  
Victor Ralchenko ◽  
Stefano Salvatori
Keyword(s):  
Diamond Film ◽  
Pressure Measurement ◽  
Microwave Plasma ◽  
Modulation Depth ◽  
Pressure Sensors ◽  
Chemical Properties ◽  
Film Surface ◽  
Full Scale ◽  
Sensing Element ◽  
Fabry Perot

Pressure sensors based on diamond membranes were designed and tested for gas pressure measurement up to 6.8 MPa. The diamond film (2” diameter, 6 μm thickness)—grown by microwave plasma chemical vapor deposition on a silicon substrate—was a starting material to produce an array of membranes with different diameters in the 130–400 μm range, in order to optimize the sensor performance. Each 5 mm × 5 mm sensing element was obtained by subsequent silicon slicing. The fixed film thickness, full-scale pressure range, and sensor sensitivity were established by a proper design of the diameter of diamond membrane which represents the sensing element for differential pressure measurement. The pressure-induced deflection of the membrane was optically measured using a Fabry-Pérot interferometer formed by a single mode optical fiber front surface and the deflecting diamond film surface. The optical response of the system was numerically simulated using geometry and the elastic properties of the diamond diaphragm, and was compared with the experiments. Depending on the diamond membrane’s diameter, the fabricated sensors displayed a good modulation depth of response over different full-scale ranges, from 3 to 300 bar. In view of the excellent mechanical, thermal, and chemical properties of diamond, such pressure sensors could be useful for performance in a harsh environment.

CMOS-MEMS Based Current Mirror MOSFET Embedded Pressure Sensor for Healthcare and Biomedical Applications

2013 ◽  
Vol 647 ◽  
pp. 315-320 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar
Keyword(s):  
Pressure Sensor ◽  
Biomedical Applications ◽  
Circuit Simulation ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Cmos Technology ◽  
Current Mirror ◽  
Sensing Element ◽  
Pressure Sensing ◽  
Cmos Mems

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.

scholarly journals A Sigma-Delta ADC for Signal Conditioning IC of Automotive Piezo-Resistive Pressure Sensors with over 80 dB SNR

Sensors ◽  
2018 ◽  
Vol 18 (12) ◽  
pp. 4199 ◽  
Author(s):  
Behnam Samadpoor Rikan ◽  
Sang-Yun Kim ◽  
Nabeel Ahmad ◽  
Hamed Abbasizadeh ◽  
Muhammad Riaz Ur Rehman ◽  
...  
Keyword(s):  
Input Signal ◽  
Flicker Noise ◽  
Signal To Noise Ratio ◽  
Pressure Sensors ◽  
High Gain ◽  
Cmos Process ◽  
Signal Conditioning ◽  
Sigma Delta ◽  
Cic Filter ◽  
Decimation Filter

This paper presents a second-order discrete-time Sigma-Delta (SD) Analog-to-Digital Converter (ADC) with over 80 dB Signal to Noise Ratio (SNR), which is applied in a signal conditioning IC for automotive piezo-resistive pressure sensors. To reduce the flicker noise of the structure, choppers are used in every stage of the high gain amplifiers. Besides, to reduce the required area and power, only the CIC filter structure is adopted as a decimation filter. This filter has a configurable structure that can be applied to different data rates and input signal bandwidths. The proposed ADC was fabricated and measured in a 0.18-µm CMOS process. Due to the application of only a CIC filter, the total active area of the SD-ADC and reference generator is 0.49 mm2 where the area of the decimation filter is only 0.075 mm2. For the input signal bandwidth of 1.22 kHz, it achieved over 80 dB SNR in a 2.5 MHz sampling frequency while consuming 646 µW power.

scholarly journals ECL-Based SiC Logic Circuits for Extreme Temperatures

2015 ◽  
Vol 821-823 ◽  
pp. 910-913 ◽  
Author(s):  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Mikael Östling ◽  
Carl Mikael Zetterling
Keyword(s):  
Power Consumption ◽  
Oscillation Frequency ◽  
Digital Circuits ◽  
Supply Voltage ◽  
Logic Circuits ◽  
Ring Oscillator ◽  
Extreme Temperatures ◽  
Temperature Range ◽  
Stable Noise ◽  
Gate Design

Integrated digital circuits, fabricated in a bipolar SiC technology, have been successfully tested up to 600 °C. Operated with-15 V supply voltage from 27 up to 600 °C OR-NOR gates exhibit stable noise margins of about 1 or 1.5 V depending on the gate design, and increasing delay-power consumption product in the range 100 - 200 nJ. In the same temperature range an oscillation frequency of about 1 MHz is also reported for an 11-stage ring oscillator.

Highly Sensitive and Wide Linear-Response Pressure Sensors Featuring Zero Standby Power Consumption under Bending Conditions

2020 ◽  
Vol 12 (17) ◽  
pp. 19563-19571 ◽  
Author(s):  
Chenghan Yi ◽  
Yuxin Hou ◽  
Ke He ◽  
Weimin Li ◽  
Nianci Li ◽  
...  
Keyword(s):  
Power Consumption ◽  
Linear Response ◽  
Pressure Sensors ◽  
Highly Sensitive ◽  
Standby Power ◽  
Response Pressure

High-performance zero-standby-power-consumption-under-bending pressure sensors for artificial reflex arc

Nano Energy ◽  
2020 ◽  
Vol 73 ◽  
pp. 104743 ◽  
Author(s):  
Ke He ◽  
Yuxin Hou ◽  
Chenghan Yi ◽  
Nianci Li ◽  
Fan Sui ◽  
...  
Keyword(s):  
Power Consumption ◽  
High Performance ◽  
Pressure Sensors ◽  
Reflex Arc ◽  
Standby Power

DESIGNING LOW POWER OF SIGMA DELTA MODULATOR FOR BIOMEDICAL APPLICATION

2005 ◽  
Vol 17 (04) ◽  
pp. 181-185 ◽  
Author(s):  
HO-YIN LEE ◽  
CHEN-MING HSU ◽  
SHENG-CHIA HUANG ◽  
YI-WEI SHIH ◽  
CHING-HSING LUO
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Biomedical Application ◽  
Loop Filter ◽  
Biomedical Signal ◽  
Sigma Delta Modulator ◽  
Sigma Delta ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Power Application

This paper discusses the design of micro power Sigma-delta modulator with oversampling technology. This Sigma-delta modulator design is paid special attention to its low power application of portable electronic system in digitizing biomedical signals such as Electro-cardiogram (ECG), Electroencephalogram (EEG) etc. [1]. A high performance, low power second order Sigma-delta modulator is more useful in analog signal acquisition system. Using Sigma-delta modulator can reduce the power consumption and cost in the whole system. The original biomedical signal can be reconstructed by simply applying the digital bit stream from the modulator output through a low-pass filter. The loop filter of this modulator has been implemented by using switch capacitor (SC) integrators and using simple circuitry consists of OpAmps, Comparator and DAC. In general, the resolution of modulator is about 10 bits for biomedical application. In this two order Sigma-delta modulator simulation results of the 1.8V sigma delta modulator show a 68 dB signal-to-noise-and-distortion ratio (SNDR) in 4 kHz biomedical signal bandwidth and a sampling frequency equal to 1 MHz in the 0.18 μ m CMOS technology. The power consumption is 400 μ W. It is very suitable for low power application of biomedical instrument design.

scholarly journals A 3.22–5.45 GHz and 199 dBc/Hz FoMT CMOS Complementary Class-C DCO

2018 ◽  
Vol 2018 ◽  
pp. 1-8
Author(s):  
Lei Ma ◽  
Na Yan ◽  
Sizheng Chen ◽  
Yangzi Liu ◽  
Hao Min
Keyword(s):  
Power Consumption ◽  
Tuning Range ◽  
Frequency Tuning ◽  
Frequency Resolution ◽  
Corner Frequency ◽  
Cmos Process ◽  
Sigma Delta Modulator ◽  
Sigma Delta ◽  
Class C ◽  
Digitally Controlled Oscillator

This paper implements a complementary Class-C digitally controlled oscillator (DCO) with differential transistor pairs. The transistors are dynamically biased by feedback loops separately benefiting the robust oscillation start-up with low power consumption. By optimizing three switched capacitor arrays and employing fractional capacitor array with sigma-delta modulator (SDM), the presented DCO operates from 3.22 GHz to 5.45 GHz with a 51.5% frequency tuning range and 0.1 ppm frequency resolution. The design was implemented in a 65 nm CMOS process with power consumption of 2.8 mA at 1.2 V voltage supply. Measurement results show that the phase noise is about −126 dBc/Hz at 3 MHz offset from a 5.054 GHz carrier frequency with the 1/f3 corner frequency of 260 KHz. The resulting FoMT achieves 199.4 dBc/Hz and varies less than 2 dB across the frequency tuning range.

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