Elasticity Analysis to Aid in Extracting Thin Film Elastic Moduli From Continuous Indentation Data

1990 ◽  
Vol 112 (1) ◽  
pp. 41-46 ◽  
Author(s):  
D. S. Stone
Keyword(s):  
Thin Film ◽  
Elastic Moduli ◽  
Small Computer ◽  
Elasticity Analysis ◽  
Sodium Borosilicate Glass ◽  
Projected Area ◽  
Elasticity Solutions ◽  
Unloading Compliance ◽  
Continuous Indentation

This article provides elasticity solutions to the indentation of a bilayer by three-sided and four-sided indentors. These solutions aid characterization of thin film elastic moduli through continuous indentation techniques. The solutions are expressed in closed-form, and can be numerically evaluated on a small computer; additionally, graphs of some of the solutions are provided to aid in rapid data analysis. Simulations of unloading compliance, C, versus 1/A1/2 (A = projected area of indent) are compared with experimental data. The data are taken from measurements of single crystal Si, polycrystalline Al, and 1 μm Al deposited on Si. The elasticity analysis is used in the measurement of the elastic modulus of a sodium borosilicate glass, and the same glass but with a damaged surface layer introduced by suspension in an acid solution.

Indentation Technique to Investigate Elastic Moduli of Thin Films on Substrates

1988 ◽  
Vol 130 ◽  
Author(s):  
D. S. Stone ◽  
T. W. Wu ◽  
P.-S. Alexopoulos ◽  
W. R. Lafontaine
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Thin Films ◽  
Closed Form ◽  
Elastic Moduli ◽  
Depth Sensing ◽  
Indentation Technique ◽  
Average Displacement ◽  
Elasticity Solutions ◽  
Poor Adhesion

AbstractClosed-form elasticity solutions are introduced, that predict the average displacement beneath square and triangular, uniformly loaded areas at the surface of a bilayer. The solutions aid in the application of depth-sensing indentation techniques for measuring thin film elastic moduli. The elasticity solutions agree closely with experimental data of Al, Si, 1 μm Al on Si, and 2 μm Cr on Si. The case of poor adhesion between the film and substrate is briefly examined.

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Microstructural and fractographic characterization of B4C-Al cermets tested under dynamic and static loading

1989 ◽  
Vol 47 ◽  
pp. 562-563
Author(s):  
Gyeung Ho Kim ◽  
Mehmet Sarikaya ◽  
D. L. Milius ◽  
I. A. Aksay
Keyword(s):  
Thin Film ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Static Loading ◽  
Carbon Deposition ◽  
Full Density ◽  
Unique Combination ◽  
Strong Component ◽  
Reaction Products

Cermets are designed to optimize the mechanical properties of ceramics (hard and strong component) and metals (ductile and tough component) into one system. However, the processing of such systems is a problem in obtaining fully dense composite without deleterious reaction products. In the lightweight (2.65 g/cc) B4C-Al cermet, many of the processing problems have been circumvented. It is now possible to process fully dense B4C-Al cermet with tailored microstructures and achieve unique combination of mechanical properties (fracture strength of over 600 MPa and fracture toughness of 12 MPa-m1/2). In this paper, microstructure and fractography of B4C-Al cermets, tested under dynamic and static loading conditions, are described.The cermet is prepared by infiltration of Al at 1150°C into partially sintered B4C compact under vacuum to full density. Fracture surface replicas were prepared by using cellulose acetate and thin-film carbon deposition. Samples were observed with a Philips 3000 at 100 kV.

Combinatorial Fabrication and High-Throughput Characterization of Thin Film Metal Oxide Libraries for Solar water Splitting

2018 ◽  
Author(s):  
Alfred Ludwig ◽  
Mona Nowak ◽  
Swati Kumari ◽  
Helge S. Stein ◽  
Ramona Gutkowski ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Water Splitting ◽  
High Throughput ◽  
Solar Water ◽  
Solar Water Splitting
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