Determination of Accommodation Coefficients for N2 at Disk-Drive Air-Bearing Surfaces

1997 ◽  
Vol 119 (3) ◽  
pp. 588-589 ◽  
Author(s):  
C. T. Rettner

Thermal and tangential momentum accommodation coefficients have been obtained for N2 colliding with various surfaces of relevance to the disk-drive air bearing using molecular beam scattering techniques. Analysis of the velocity and angular distributions of scattered species indicates that N2 is essentially fully accommodated at the relevant surfaces for energies characteristic of room temperature gas.

1993 ◽  
Vol 334 ◽  
Author(s):  
Chaochin Su ◽  
Zi-Guo Dai ◽  
Hui-Qi Hou ◽  
Ming Xi ◽  
Matthew F. Vernon ◽  
...  

AbstractResults in the literature indicate that C12 etches GaAs at room temperature but HCl etches GaAs at a measurable rate only at temperatures above ∼670 K. In this work, molecular beam scattering and surface analysis techniques have been applied to address the fundamental kinetic differences between these two systems. The results indicate that the onset of GaAs etching by C12 is determined by the kinetics of Ga-removal as GaC13 while etching by HCl is limited by As evaporation as As2. The results also suggest that HCl selectively etches gallium from GaAs at temperatures between 600 and 650 K.


1974 ◽  
Vol 61 (12) ◽  
pp. 5381-5388 ◽  
Author(s):  
G. Aniansson ◽  
R. P. Creaser ◽  
W. D. Held ◽  
L. Holmlid ◽  
J. P. Toennies

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