SILICON CARBIDE FORMATION FROM NATURAL WOODS

2015 ◽  
Vol 76 (3) ◽  
Author(s):  
Koay Mei Hyie ◽  
Siti Sajidah Muda ◽  
Husna Md Elias ◽  
Noor Leha Abdul Rahman ◽  
Anizah Kalam
Keyword(s):  
Silicon Carbide ◽  
Carbide Formation ◽  
Nitrogen Gas ◽  
Infiltration Process ◽  
Working Temperature ◽  
Carbon Template ◽  
Infiltration Temperature ◽  
Different Types ◽  
Sic Composites ◽  
Two Stages

Processing of cellular ceramics with anisotropic pore structure by using silicon infiltration into carbonized template was investigated. Biomorphic silicon carbide (bioSiC) was produced by using two different types of natural woods which are Kapur and Dark Red Meranti. Carbon template was produced from a pyrolysis process followed by an infiltration process of melting silicon to produce bioSiC. The samples were dried in an oven in order to remove the moisture of the samples. The pyrolysis was done in two stages at a temperature of 500°C followed by 850°C. This study was to investigate the effect of infiltration temperature in the formation of SiC composites. Two different infiltration temperatures of 1500°C and 1600°C were used with constant holding time of 1 hour. The characteristic of the biomorphic silicon carbide was analyzed using the TGA, FESEM and EDX analysis. A wide variety of microstructures, densities and porosities were found depending on the type of wood used. Instead of carbon, it was found that both woods also reacted with nitrogen gas, which reduced the formation of SiC. The density of samples was increased as the working temperature increased.  Dark Red Meranti was found to be denser and exhibit higher porosity than Kapur due to the higher formation of SiC.

Microstructure Characterization on Silicon Carbide Formation from Natural Wood

2015 ◽  
Vol 799-800 ◽  
pp. 179-182
Author(s):  
Noor Leha Abdul Rahman ◽  
Koay Mei Hyie ◽  
Anizah Kalam ◽  
W.D. Teng ◽  
Husna Elias
Keyword(s):  
Silicon Carbide ◽  
Thermo Gravimetric Analysis ◽  
Carbide Formation ◽  
Gravimetric Analysis ◽  
Free Atmosphere ◽  
Thermo Gravimetric ◽  
Infiltration Process ◽  
Carbon Template ◽  
Natural Wood ◽  
Decomposition Behavior

Dark red meranti and kapur,are two important types of wood in Malaysia were used as precursors to fabricate porous silicon carbide. A carbon template was produced by pyrolysis at 850oC in an oxygen free atmosphere. The carbon template was further subjected to infiltration process with silicon. The infiltration process was carried out in a tube furnace in argon flow at 1500oC with two different holding times; 2 hours and 3 hours. Thermo gravimetric analysis was done to investigate the decomposition behavior of the two species. The resulting silicon carbide was characterized by XRD. The formation of silicon carbide and also excess silicon were found. The microstructure was characterized by scanning electron microscope (SEM). An increase in holding time during infiltration increased the density as well as formation of silicon carbide (SiC). Dark red meranti precursor is likely suitable for production of silicon carbide compared to kapur due to the higher SiC

Effect of Infiltration Temperature on the Composition and Mechanical Property of RMI C/C-SiC Composite

2015 ◽  
Vol 816 ◽  
pp. 71-77
Author(s):  
Jing Wang ◽  
Ying Bin Cao ◽  
Dong Lin ◽  
Rong Jun Liu ◽  
Chang Rui Zhang
Keyword(s):  
Mechanical Properties ◽  
Mechanical Property ◽  
Infiltration Process ◽  
Infiltration Temperature ◽  
Interfacial Bonding Strength ◽  
Melt Infiltration ◽  
Different Temperatures ◽  
Sic Composites ◽  
Reactive Melt Infiltration ◽  
Reactive Melt

C/C-SiC composites were prepared by reactive melt infiltration process at different temperatures. The composition, microstructures and mechanical properties of the composites were investigated. The results showed that infiltration temperature could affect composite’s properties through regulating the chemical composition and interfacial bonding strength of the composites. The C/C-SiC composite prepared at 1650°C exhibited the relatively highest performance with density of 2.24 g·cm-3 and SiC content of 31.44 vol.%. The flexural strength and the fracture toughness were 238MPa and 10.04 MPa·m1/2, respectively.

Electrical Resistance and Acoustic Emission During Fatigue Testing of Pristine and High Velocity Impact SiC/SiC Composites at Room and Elevated Temperature

2016 ◽  
Author(s):  
Zipeng Han ◽  
Gregory N. Morscher ◽  
Emmanuel Maillet ◽  
Manigandan Kannan ◽  
Sung R. Choi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Acoustic Emission ◽  
Cyclic Loading ◽  
Electrical Resistance ◽  
Fatigue Testing ◽  
Early Stage ◽  
Loading Conditions ◽  
Initial Attempt ◽  
Matrix Cracks ◽  
Sic Composites

Electrical resistance (ER) is a relatively new approach for real-time monitoring and evaluating damage in SiC/SiC composites for a variety of loading conditions. In this study, ER of woven silicon carbide fiber-reinforced silicon carbide composite systems in their pristine and impacted state were measured under cyclic loading conditions at room and high temperature (1200C). In addition, modal acoustic emission (AE) was also monitored, which can reveal the occasion of matrix cracks and fiber. ER measurement and AE technique are shown in this study to be useful methods to monitor damage and indicate the failure under cyclic loading. Based on the slope of the ER evolution, an initial attempt has been made to develop a method allowing a critical damage phase to be identified. While the physical meaning of the critical point is not yet clear, it has the potential to allow the failure to be indicated at its early stage.

Silicon carbide formation by methane plasma immersion ion implantation into silicon

2003 ◽  
Vol 21 (4) ◽  
pp. 1375 ◽  
Author(s):  
Zhenghua An ◽  
Ricky K. Y. Fu ◽  
Peng Chen ◽  
Weili Liu ◽  
Paul K. Chu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Carbide Formation ◽  
Plasma Immersion Ion Implantation

Argon incorporation and silicon carbide formation during low energy argon‐ion bombardment of Si(100)

1996 ◽  
Vol 79 (6) ◽  
pp. 2934-2941 ◽  
Author(s):  
J. S. Pan ◽  
A. T. S. Wee ◽  
C. H. A. Huan ◽  
H. S. Tan ◽  
K. L. Tan
Keyword(s):  
Silicon Carbide ◽  
Ion Bombardment ◽  
Low Energy ◽  
Carbide Formation ◽  
Argon Ion Bombardment ◽  
Argon Ion

A novel two-stage method of plant seedlings classification based on deep learning

2021 ◽  
pp. 1-11
Author(s):  
Tianhong Dai ◽  
Shijie Cong ◽  
Jianping Huang ◽  
Yanwen Zhang ◽  
Xinwang Huang ◽  
...  
Keyword(s):  
Deep Learning ◽  
Learning Technology ◽  
Two Stage ◽  
Second Stage ◽  
Stage Classification ◽  
Different Types ◽  
Two Stages ◽  
Plant Seedlings

In agricultural production, weed removal is an important part of crop cultivation, but inevitably, other plants compete with crops for nutrients. Only by identifying and removing weeds can the quality of the harvest be guaranteed. Therefore, the distinction between weeds and crops is particularly important. Recently, deep learning technology has also been applied to the field of botany, and achieved good results. Convolutional neural networks are widely used in deep learning because of their excellent classification effects. The purpose of this article is to find a new method of plant seedling classification. This method includes two stages: image segmentation and image classification. The first stage is to use the improved U-Net to segment the dataset, and the second stage is to use six classification networks to classify the seedlings of the segmented dataset. The dataset used for the experiment contained 12 different types of plants, namely, 3 crops and 9 weeds. The model was evaluated by the multi-class statistical analysis of accuracy, recall, precision, and F1-score. The results show that the two-stage classification method combining the improved U-Net segmentation network and the classification network was more conducive to the classification of plant seedlings, and the classification accuracy reaches 97.7%.

Model and Results of a Study of the Synthesis of Finely Dispersed Silicon Carbide in an Electro-Thermal Reactor

2021 ◽  
Vol 316 ◽  
pp. 147-152
Author(s):  
V.S. Kuzevanov ◽  
S.S. Zakozhurnikov ◽  
Galina S. Zakozhurnikova
Keyword(s):  
Silicon Carbide ◽  
Fluidized Bed ◽  
Process Model ◽  
Operation Mode ◽  
Specific Energy Consumption ◽  
Thermal Reactor ◽  
Carbide Formation ◽  
Level Of Automation ◽  
High Temperature Synthesis ◽  
Basic Equations

The high-temperature synthesis of silicon carbide (SiC) in an electro-thermal fluidized bed reactor (EFB) has advantages, in comparison with the production in resistance furnaces, in terms of specific energy consumption, productivity and the level of automation of the technological process. The basic equations of the fluidized-bed carbide formation process model are presented in the paper. The results of calculating the synthesis parameters of finely dispersed SiC in the stationary operation mode of the EFB reactor are also presented. The correspondence between the calculated and available experimental results on the output of the final product is shown.

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