scholarly journals Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers

2017 ◽  
Vol 268 (3) ◽  
pp. 288-297 ◽  
Author(s):  
D.J. NORRIS ◽  
M. MYRONOV ◽  
D.R. LEADLEY ◽  
T. WALTHER
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Silicon Wafers ◽  
Cross Sectional ◽  
Transmission Electron

Cross-sectional Transmission Electron Microscope Studies on Intrinsic Breakdown Spots of Thin Gate Oxides

1997 ◽  
Vol 36 (Part 1, No. 5A) ◽  
pp. 2561-2564 ◽  
Author(s):  
Satoshi Ikeda ◽  
Masao Okihara ◽  
Hidetsugu Uchida ◽  
Norio Hirashita
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Cross Sectional ◽  
Gate Oxides ◽  
Transmission Electron

Si1-XGeX Selective Etchant for Gate-All-Around Transistors

2021 ◽  
Vol 314 ◽  
pp. 71-76
Author(s):  
Ken Harada ◽  
Tatsunobu Suzuki ◽  
Tomohiro Kusano ◽  
Kan Takeshita ◽  
Yusuke Oniki ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Selective Etching ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Etch Rates

3 formulated etchants were prepared and their etch rates were measured using blanket wafers in order to confirm that the etching reactions on Si1-XGeX and Si are controllable. Si1-XGeX selective etching with those formulations was also verified using the wafers which had Si1-XGeX and Si multi-stacked structures. Cross-sectional transmission electron microscope (TEM) images suggested that the formulations were usable for Si1-XGeX selective etching processes.

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