Depolarization electric field and poling voltage‐modulated Pb,La(Zr,Ti)O 3 ‐based self‐powered ultraviolet photodetectors

2020 ◽  
Vol 104 (2) ◽  
pp. 928-935
Author(s):  
Ying Zhang ◽  
Jian Chen ◽  
Yixing Cai ◽  
Qingfeng Zhang ◽  
Yinmei Lu ◽  
...  
Keyword(s):  
Electric Field ◽  
Self Powered ◽  
Poling Voltage ◽  
Ultraviolet Photodetectors

scholarly journals Self-Powered Ultraviolet Photodetectors Driven by Built-In Electric Field

Small ◽  
2017 ◽  
Vol 13 (45) ◽  
pp. 1701687 ◽  
Author(s):  
Longxing Su ◽  
Wei Yang ◽  
Jian Cai ◽  
Hongyu Chen ◽  
Xiaosheng Fang
Keyword(s):  
Electric Field ◽  
Self Powered ◽  
Ultraviolet Photodetectors

A simple, repeatable and highly stable self-powered solar-blind photoelectrochemical-type photodetector using amorphous Ga2O3 films grown on 3D carbon fiber paper

2021 ◽  
Author(s):  
Lijuan Huang ◽  
Zhengrui Hu ◽  
Hong Zhang ◽  
Yuanqiang Xiong ◽  
Shiqiang Fan ◽  
...  
Keyword(s):  
Carbon Fiber ◽  
Gallium Oxide ◽  
Three Dimensional ◽  
Next Generation ◽  
Solar Blind ◽  
Carbon Fiber Paper ◽  
Deep Ultraviolet ◽  
Self Powered ◽  
Ultraviolet Photodetectors

Gallium oxide (Ga2O3) has been extensively studied in recent years because it is a natural candidate material for next-generation solar-blind deep ultraviolet photodetectors (PDs). Herein, a three dimensional (3D) amorphous...

Surface photo-charge effect in doped-ZnO nanorods for high-performance self-powered ultraviolet photodetectors

Nanoscale ◽  
2017 ◽  
Vol 9 (13) ◽  
pp. 4536-4543 ◽  
Author(s):  
Buddha Deka Boruah ◽  
Shanmukh Naidu Majji ◽  
Abha Misra
Keyword(s):  
High Performance ◽  
Zno Nanorods ◽  
Charge Effect ◽  
Doped Zno ◽  
Self Powered ◽  
Ultraviolet Photodetectors

Self-powered GaN ultraviolet photodetectors with p-NiO electrode grown by thermal oxidation

2018 ◽  
Vol 76 ◽  
pp. 61-64 ◽  
Author(s):  
Liuan Li ◽  
Zhangcheng Liu ◽  
Lei Wang ◽  
Baijun zhang ◽  
Yang Liu ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Self Powered ◽  
Ultraviolet Photodetectors

scholarly journals Enhanced photoresponse in ZnO nanorod array/p-GaN self-powered ultraviolet photodetectors via coupling with CuO nanostructures

2020 ◽  
Vol 7 (1) ◽  
pp. 015063 ◽  
Author(s):  
Qiu-Ming Fu ◽  
Zhi-Chao Yao ◽  
Ji-Liang Peng ◽  
Hong-Yang Zhao ◽  
Zhi-Bin Ma ◽  
...  
Keyword(s):  
Nanorod Array ◽  
Zno Nanorod ◽  
Zno Nanorod Array ◽  
Self Powered ◽  
Ultraviolet Photodetectors

Self-Powered, Self-Healed, and Shape-Adaptive Ultraviolet Photodetectors

2020 ◽  
Vol 12 (8) ◽  
pp. 9755-9765 ◽  
Author(s):  
Meng-Shian Tsai ◽  
Tien-Lin Shen ◽  
Hsing-Mei Wu ◽  
Yu-Ming Liao ◽  
Yu-Kuang Liao ◽  
...  
Keyword(s):  
Self Powered ◽  
Ultraviolet Photodetectors

scholarly journals Fabrication of GaN nano-towers based self-powered UV photodetector

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Lalit Goswami ◽  
Neha Aggarwal ◽  
Pargam Vashishtha ◽  
Shubhendra Kumar Jain ◽  
Shruti Nirantar ◽  
...  
Keyword(s):  
High Performance ◽  
Volume Ratio ◽  
Fast Time ◽  
Trap States ◽  
Barrier Heights ◽  
Photocurrent Generation ◽  
Lower Strain ◽  
Self Powered ◽  
Aln Buffer ◽  
Ultraviolet Photodetectors

AbstractThe fabrication of unique taper-ended GaN-Nanotowers structure based highly efficient ultraviolet photodetector is demonstrated. Hexagonally stacked, single crystalline GaN nanocolumnar structure (nanotowers) grown on AlN buffer layer exhibits higher photocurrent generation due to high quality nanotowers morphology and increased surface/volume ratio which significantly enhances its responsivity upon ultraviolet exposure leading to outstanding performance from the developed detection device. The fabricated detector display low dark current (~ 12 nA), high ILight/IDark ratio (> 104), fast time-correlated transient response (~ 433 µs) upon ultraviolet (325 nm) illumination. A high photoresponsivity of 2.47 A/W is achieved in self-powered mode of operation. The reason behind such high performance could be attributed to built-in electric field developed from a difference in Schottky barrier heights will be discussed in detail. While in photoconductive mode, the responsivity is observed to be 35.4 A/W @ − 3 V along with very high external quantum efficiency (~ 104%), lower noise equivalent power (~ 10–13 WHz−1/2) and excellent UV–Vis selectivity. Nanotower structure with lower strain and dislocations as well as reduced trap states cumulatively contributed to augmented performance from the device. The utilization of these GaN-Nanotower structures can potentially be useful towards the fabrication of energy-efficient ultraviolet photodetectors.

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