Temperature‐dependent electrical transport behavior and structural evolution in hollandite‐type titanium‐based oxide

2019 ◽  
Vol 102 (11) ◽  
pp. 6741-6750 ◽  
Author(s):  
Tao Feng ◽  
Liping Li ◽  
Zhe Lv ◽  
Baoyun Li ◽  
Yuelan Zhang ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Structural Evolution ◽  
Temperature Dependent ◽  
Transport Behavior

scholarly journals Influence of ion irradiation on temperature dependent electrical transport behavior of thin graphite flakes

2016 ◽  
Vol 34 (2) ◽  
pp. 399-403 ◽  
Author(s):  
Jabril A. Khamaj
Keyword(s):  
Electrical Transport ◽  
Ion Irradiation ◽  
Graphite Flake ◽  
Type I ◽  
Temperature Dependent ◽  
Linear Type ◽  
Metallic Behavior ◽  
Transport Behavior ◽  
Irradiated Graphite ◽  
Current Voltage

AbstractIn this article, the influence of ion irradiation on temperature dependent electrical transport characteristics of thin graphite flakes was investigated. Thin graphite flakes were exfoliated by mechanical exfoliation method. Scanning electron microscopy was used to study surface morphology of the graphite flakes. The resistance versus temperature studies revealed that the graphite flake not subjected to Ga+ ion-irradiation showed a perfect metallic behavior, while the graphite flake after ion-irradiation showed a semiconducting behavior. The current-voltage (I-V) characteristics of bare and ion-irradiated graphite flakes were investigated. The bare graphite flake showed an ohmic-type I-V characteristics representing metallic behavior, while the ion-irradiated graphite flake showed a non-linear type diode-like characteristics. The temperature-dependent conductance measurements of ion-irradiated graphite flake were also performed and discussed in detail. The effect of Ga+ ions on the electronic transport behavior of thin graphite flakes has been discussed based on the investigation results.

Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

2011 ◽  
Vol 109 (4) ◽  
pp. 044502-044502-5 ◽  
Author(s):  
Basanta Roul ◽  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Mahesh Kumar ◽  
Neeraj Sinha ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Transport Behavior ◽  
Gan Heterostructure

Temperature dependent magnetic ordering and electrical transport behavior of nano zinc ferrite from 20 to 800K

2014 ◽  
Vol 590 ◽  
pp. 184-192 ◽  
Author(s):  
B. Daruka Prasad ◽  
H. Nagabhushana ◽  
K. Thyagarajan ◽  
B.M. Nagabhushana ◽  
D.M. Jnaneshwara ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Zinc Ferrite ◽  
Magnetic Ordering ◽  
Temperature Dependent ◽  
Transport Behavior ◽  
Nano Zinc

Temperature dependent electrical transport behavior of (100-x)Bi2O3-x(BaTiO3) glass system

2021 ◽  
Vol 121 ◽  
pp. 106749
Author(s):  
Seema Thakur ◽  
Vanita Thakur ◽  
Anumeet Kaur ◽  
Lakhwant Singh
Keyword(s):  
Electrical Transport ◽  
Glass System ◽  
Temperature Dependent ◽  
Transport Behavior

La Doping Effect on Temperature-Dependent Carrier Transport Behavior of Zn1–xLaxO Nanocrystalline Films

2015 ◽  
Vol 12 (5) ◽  
pp. 780-785
Author(s):  
San-Lin Young ◽  
Ming-Cheng Kao ◽  
Hone-Zern Chen ◽  
Neng-Fu Shih ◽  
Chung-Yuan Kung ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Doping Effect ◽  
Nanocrystalline Films ◽  
Temperature Dependent ◽  
La Doping ◽  
Transport Behavior

Temperature Dependent Structural Evolution of Graphene Layers on 4H-SiC(0001)

2011 ◽  
Vol 679-680 ◽  
pp. 797-800 ◽  
Author(s):  
Sushant Sonde ◽  
Carmelo Vecchio ◽  
Filippo Giannazzo ◽  
Corrado Bongiorno ◽  
Salvatore di Franco ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Structural Evolution ◽  
Morphological Transformation ◽  
Temperature Dependent ◽  
Microscopy Imaging ◽  
Graphene Layers ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Mode Atomic Force Microscopy

In this study we examined the structural evolution of graphene grown on 8° off-axis 4H-SiC(0001) substrates at temperatures from 1600°C to 1700°C in Ar ambient. Morphological transformation of SiC substrate after annealing was examined by Tapping Mode Atomic Force Microscopy. Moreover, by etching-out graphene layers from graphitized SiC substrates in selective trenches we determined the number of graphene layers. Numbers of graphene layers were then independently confirmed by Transmission Electron Microscopy imaging.

Temperature dependent electrical transport of disordered reduced graphene oxide

2D Materials ◽  
2014 ◽  
Vol 1 (1) ◽  
pp. 011008 ◽  
Author(s):  
Baleeswaraiah Muchharla ◽  
T N Narayanan ◽  
Kaushik Balakrishnan ◽  
Pulickel M Ajayan ◽  
Saikat Talapatra
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Electrical Transport ◽  
Temperature Dependent ◽  
Reduced Graphene

Porous graphene network from graphene oxide: Facile self-assembly and temperature dependent structural evolution

2021 ◽  
Vol 26 ◽  
pp. 101930
Author(s):  
Anusuya T. ◽  
Prakash J. ◽  
Devesh K. Pathak ◽  
Kapil Saxena ◽  
Rajesh Kumar ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Self Assembly ◽  
Structural Evolution ◽  
Temperature Dependent ◽  
Porous Graphene
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