Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes

2011 ◽  
Vol 109 (4) ◽  
pp. 044502-044502-5 ◽  
Author(s):  
Basanta Roul ◽  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Mahesh Kumar ◽  
Neeraj Sinha ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Transport Behavior ◽  
Gan Heterostructure

scholarly journals Influence of ion irradiation on temperature dependent electrical transport behavior of thin graphite flakes

2016 ◽  
Vol 34 (2) ◽  
pp. 399-403 ◽  
Author(s):  
Jabril A. Khamaj
Keyword(s):  
Electrical Transport ◽  
Ion Irradiation ◽  
Graphite Flake ◽  
Type I ◽  
Temperature Dependent ◽  
Linear Type ◽  
Metallic Behavior ◽  
Transport Behavior ◽  
Irradiated Graphite ◽  
Current Voltage

AbstractIn this article, the influence of ion irradiation on temperature dependent electrical transport characteristics of thin graphite flakes was investigated. Thin graphite flakes were exfoliated by mechanical exfoliation method. Scanning electron microscopy was used to study surface morphology of the graphite flakes. The resistance versus temperature studies revealed that the graphite flake not subjected to Ga+ ion-irradiation showed a perfect metallic behavior, while the graphite flake after ion-irradiation showed a semiconducting behavior. The current-voltage (I-V) characteristics of bare and ion-irradiated graphite flakes were investigated. The bare graphite flake showed an ohmic-type I-V characteristics representing metallic behavior, while the ion-irradiated graphite flake showed a non-linear type diode-like characteristics. The temperature-dependent conductance measurements of ion-irradiated graphite flake were also performed and discussed in detail. The effect of Ga+ ions on the electronic transport behavior of thin graphite flakes has been discussed based on the investigation results.

Temperature dependent magnetic ordering and electrical transport behavior of nano zinc ferrite from 20 to 800K

2014 ◽  
Vol 590 ◽  
pp. 184-192 ◽  
Author(s):  
B. Daruka Prasad ◽  
H. Nagabhushana ◽  
K. Thyagarajan ◽  
B.M. Nagabhushana ◽  
D.M. Jnaneshwara ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Zinc Ferrite ◽  
Magnetic Ordering ◽  
Temperature Dependent ◽  
Transport Behavior ◽  
Nano Zinc

Temperature dependent current transport behavior of improved low noise NiGe schottky diodes for low leakage Ge-MOSFET

2019 ◽  
Vol 34 (3) ◽  
pp. 035026 ◽  
Author(s):  
Wasi Uddin ◽  
Mohd Saleem Pasha ◽  
Veerendra Dhyani ◽  
Sarmistha Maity ◽  
Samaresh Das
Keyword(s):  
Schottky Diodes ◽  
Low Noise ◽  
Current Transport ◽  
Temperature Dependent ◽  
Transport Behavior ◽  
Low Leakage

Temperature dependent electrical transport behavior of (100-x)Bi2O3-x(BaTiO3) glass system

2021 ◽  
Vol 121 ◽  
pp. 106749
Author(s):  
Seema Thakur ◽  
Vanita Thakur ◽  
Anumeet Kaur ◽  
Lakhwant Singh
Keyword(s):  
Electrical Transport ◽  
Glass System ◽  
Temperature Dependent ◽  
Transport Behavior

Temperature‐dependent electrical transport behavior and structural evolution in hollandite‐type titanium‐based oxide

2019 ◽  
Vol 102 (11) ◽  
pp. 6741-6750 ◽  
Author(s):  
Tao Feng ◽  
Liping Li ◽  
Zhe Lv ◽  
Baoyun Li ◽  
Yuelan Zhang ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Structural Evolution ◽  
Temperature Dependent ◽  
Transport Behavior

scholarly journals Barrier Inhomogeneity and Electrical Properties of InN Nanodots/Si Heterojunction Diodes

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Mahesh Kumar ◽  
Basanta Roul ◽  
Thirumaleshwara N. Bhat ◽  
Mohana K. Rajpalke ◽  
A. T. Kalghatgi ◽  
...  
Keyword(s):  
Barrier Height ◽  
Electrical Transport ◽  
Schottky Diodes ◽  
Indium Nitride ◽  
Effective Area ◽  
Temperature Dependent ◽  
Si Substrates ◽  
Correct Determination ◽  
Barrier Inhomogeneity ◽  
20 Nm

The electrical transport behavior ofn-nindium nitride nanodot-silicon (InN ND-Si) heterostructure Schottky diodes is reported here, which have been fabricated by plasma-assisted molecular beam epitaxy. InN ND structures were grown on a 20 nm InN buffer layer on Si substrates. These dots were found to be single crystalline and grown along [0 0 0 1] direction. Temperature-dependent current density-voltage plots (J-V-T) reveal that the ideality factor (η) and Schottky barrier height (SBH) (ΦB) are temperature dependent. The incorrect values of the Richardson constant (A**) produced suggest an inhomogeneous barrier. Descriptions of the experimental results were explained by using two models. First one is barrier height inhomogeneities (BHIs) model, in which considering an effective area of the inhomogeneous contact provided a procedure for a correct determination ofA**. The Richardson constant is extracted ~110 A cm-2K-2using the BHI model and that is in very good agreement with the theoretical value of 112 A cm-2K-2. The second model uses Gaussian statistics and by this, mean barrier heightΦ0andA**were found to be 0.69 eV and 113 A cm-2K-2, respectively.

On the profile of temperature dependent series resistance in Al/Si3N4/p-Si (MIS) Schottky diodes

2006 ◽  
Vol 83 (3) ◽  
pp. 577-581 ◽  
Author(s):  
M.M. Bülbül ◽  
S. Zeyrek ◽  
Ş. Altındal ◽  
H. Yüzer
Keyword(s):  
Series Resistance ◽  
Schottky Diodes ◽  
Temperature Dependent ◽  
Dependent Series

La Doping Effect on Temperature-Dependent Carrier Transport Behavior of Zn1–xLaxO Nanocrystalline Films

2015 ◽  
Vol 12 (5) ◽  
pp. 780-785
Author(s):  
San-Lin Young ◽  
Ming-Cheng Kao ◽  
Hone-Zern Chen ◽  
Neng-Fu Shih ◽  
Chung-Yuan Kung ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Doping Effect ◽  
Nanocrystalline Films ◽  
Temperature Dependent ◽  
La Doping ◽  
Transport Behavior
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