scholarly journals Nanostructured mullite steam oxidation resistant coatings for silicon carbide deposited via atomic layer deposition

2018 ◽  
Vol 101 (6) ◽  
pp. 2493-2505 ◽  
Author(s):  
Amanda L. Hoskins ◽  
Aidan H. Coffey ◽  
Charles B. Musgrave ◽  
Alan W. Weimer
Keyword(s):  
Silicon Carbide ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Steam Oxidation ◽  
Layer Deposition ◽  
Oxidation Resistant

scholarly journals Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide

2019 ◽  
Vol 6 (10) ◽  
pp. 1900097 ◽  
Author(s):  
Emanuela Schilirò ◽  
Raffaella Lo Nigro ◽  
Fabrizio Roccaforte ◽  
Ioannis Deretzis ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Atomic Layer Deposition ◽  
Seed Layer ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Layer Deposition ◽  
Highly Uniform ◽  
Seed Layer Free

Synthesis of oxidation-resistant metal nanoparticles via atomic layer deposition

2007 ◽  
Vol 18 (34) ◽  
pp. 345603 ◽  
Author(s):  
Luis F Hakim ◽  
Candace L Vaughn ◽  
Heather J Dunsheath ◽  
Casey S Carney ◽  
Xinhua Liang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Nanoparticles ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Oxidation Resistant

MOCVD Compatible Atomic Layer Deposition Process of Al2O3 on SiC and Graphene/SiC Heterostructures

2018 ◽  
Vol 924 ◽  
pp. 506-510
Author(s):  
Marco Eckstein ◽  
Christian Koppka ◽  
Sebastian Thiele ◽  
Yan Mi ◽  
Rui Xu ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Atomic Layer Deposition ◽  
Aluminium Oxide ◽  
Atomic Layer ◽  
Deposition Process ◽  
Oxide Layers ◽  
Atomic Layer Deposition Process ◽  
Layer Deposition ◽  
High K ◽  
Silicon Silicon

Aluminium oxide was deposited on silicon, silicon carbide and epitaxial graphene grown on silicon carbide by atomic layer deposition using a standard MOCVD equipment. The morphology and the electrical properties of the aluminium oxide layers on both substrates were determined and compared to aluminium oxide layers deposited with a standard atomic layer deposition equipment. The high-k material fabricated with the developed MOCVD process show comparable or better properties compared to the standard atomic layer deposition process.

Application of Atomic Layer Deposition in Dye-Sensitized Photoelectrosynthesis Cells

2021 ◽  
Vol 3 (1) ◽  
pp. 59-71
Author(s):  
Degao Wang ◽  
Qing Huang ◽  
Weiqun Shi ◽  
Wei You ◽  
Thomas J. Meyer
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dye Sensitized ◽  
Layer Deposition

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

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