Fast preparation of (111)-oriented β-SiC films without carbon formation by laser chemical vapor deposition from hexamethyldisilane without H2

2017 ◽  
Vol 101 (4) ◽  
pp. 1471-1478 ◽  
Author(s):  
Qingfang Xu ◽  
Peipei Zhu ◽  
Qingyun Sun ◽  
Rong Tu ◽  
Song Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Formation ◽  
Laser Chemical Vapor Deposition ◽  
Sic Films

High-Speed Preparation of - and -Oriented β-SiC Films by Laser Chemical Vapor Deposition

2013 ◽  
Vol 97 (3) ◽  
pp. 952-958 ◽  
Author(s):  
Song Zhang ◽  
Qingfang Xu ◽  
Rong Tu ◽  
Takashi Goto ◽  
Lianmeng Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Speed ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Sic Films

Laser chemical vapor deposition of SiC films with CO2 laser

2010 ◽  
Vol 502 (1) ◽  
pp. 238-242 ◽  
Author(s):  
Kengo Fujie ◽  
Akihiko Ito ◽  
Rong Tu ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Co2 Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Sic Films

Growth mechanism of porous 3C–SiC films prepared via laser chemical vapor deposition

2020 ◽  
Vol 46 (10) ◽  
pp. 16518-16523 ◽  
Author(s):  
Liuyi Cai ◽  
Qingfang Xu ◽  
Wenzhong Lu ◽  
Rong Tu ◽  
Takashi Goto ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Sic Films

scholarly journals Morphology controlling of 〈111〉-3C–SiC films by HMDS flow rate in LCVD

RSC Advances ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 2426-2430 ◽  
Author(s):  
Qingfang Xu ◽  
Rong Tu ◽  
Qingyun Sun ◽  
Meijun Yang ◽  
Qizhong Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Flow Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Laser Chemical Vapor Deposition ◽  
Sic Films

Morphology of 〈111〉-oriented 3C–SiC films was transformed from mosaic to whisker to cauliflower-like with the increased flow rate (f) of hexametyldisilane (HMDS) in the process of laser chemical vapor deposition (LCVD).

Grazing incidence reflectance of SiC films produced by plasma-assisted chemical vapor deposition

1988 ◽  
Vol 27 (8) ◽  
pp. 1499 ◽  
Author(s):  
Ritva A. M. Keski-Kuha ◽  
John F. Osantowski ◽  
Albert R. Toft ◽  
William D. Partlow
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
Sic Films
Sign in / Sign up

Export Citation Format

Share Document