Grain boundary complexions in silicon carbide

2017 ◽  
Vol 101 (3) ◽  
pp. 1009-1013 ◽  
Author(s):  
Felix Cancino-Trejo ◽  
David J. Navarro-Solis ◽  
Eddie López-Honorato ◽  
Jeremy Rabone ◽  
Ross C. Walker ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Grain Boundary ◽  
Grain Boundary Complexions

scholarly journals Grain boundary complexions in minerals

2021 ◽  
Author(s):  
Pierre Hirel ◽  
Philippe Carrez ◽  
Patrick Cordier
Keyword(s):  
Grain Boundary ◽  
Grain Boundary Complexions

Grain-boundary type and distribution in silicon carbide coatings and wafers

2018 ◽  
Vol 500 ◽  
pp. 176-183 ◽  
Author(s):  
Felix Cancino-Trejo ◽  
Eddie López-Honorato ◽  
Ross C. Walker ◽  
Romelia Salomon Ferrer
Keyword(s):  
Silicon Carbide ◽  
Grain Boundary ◽  
Boundary Type ◽  
Carbide Coatings

On the Role of Grain-Boundary Films in Optimizing the Mechanical Properties of Silicon Carbide Ceramics

2004 ◽  
Vol 818 ◽  
Author(s):  
R. O. Ritchie ◽  
X.-F. Zhang ◽  
L. C. De Jonghe
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Fracture Toughness ◽  
Silicon Carbide ◽  
Grain Boundary ◽  
Elevated Temperatures ◽  
Boundary Structure ◽  
Intergranular Films ◽  
Grain Boundary Structure ◽  
Silicon Carbide Ceramics

AbstractThrough control of the grain-boundary structure, principally in the nature of the nanoscale intergranular films, a silicon carbide with a fracture toughness as high as 9.1 MPa.m1/2 has been developed by hot pressing β-SiC powder with aluminum, boron, and carbon additions (ABC-SiC). Central in this material development has been systematic transmission electron microscopy (TEM) and mechanical characterizations. In particular, atomic-resolution electron microscopy and nanoprobe composition quantification were combined in analyzing grain boundary structure and nanoscale structural features. Elongated SiC grains with 1 nm-wide amorphous intergranular films were believed to be responsible for the in situ toughening of this material, specifically by mechanisms of crack deflection and grain bridging. Two methods were found to be effective in modifying microstructure and optimizing mechanical performance. First, prescribed post-annealing treatments at temperatures between 1100 and 1500°C were seen to cause full crystallization of the amorphous intergranular films and to introduce uniformly dispersed nanoprecipitates within SiC matrix grains; in addition, lattice diffusion of aluminum at elevated temperatures was seen to alter grain-boundary composition. Second, adjusting the nominal content of sintering additives was also observed to change the grain morphology, the grain-boundary structure, and the phase composition of the ABC-SiC. In this regard, the roles of individual additives in developing boundary microstructures were identified; this was demonstrated to be critical in optimizing the mechanical properties, including fracture toughness and fatigue resistance at ambient and elevated temperatures, flexural strength, wear resistance, and creep resistance.

Analysis Of Oxygen Distribution In Interfaces In SiC Whisker Reinforced Si3 N4-Based Composites.

1991 ◽  
Vol 238 ◽  
Author(s):  
K. Das Chowdihury ◽  
R. W. Carpenter ◽  
W. Braue
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
High Resolution ◽  
Grain Boundary ◽  
Oxygen Distribution ◽  
Interfacial Layers ◽  
Silicon Carbide Whisker ◽  
Resolution Electron ◽  
Analytical Microscopy ◽  
Electron Imaging

ABSTRACTDiscontinuous and continuous interfacial layers at the whisker/matrix and grain boundary interfaces in silicon carbide whisker reinforced silicon nitride based composites were investigated by high resolution electron imaging and analytical microscopy. Wide differences in chemical and structural widths of the interfaces were observed.

Effects of rare earth dopants on grain boundary bonding in alumina–silicon carbide composites

2004 ◽  
Vol 24 (2) ◽  
pp. 511-516 ◽  
Author(s):  
Zhen-Yan Deng ◽  
You Zhou ◽  
Manuel E. Brito ◽  
Yoshihisa Tanaka ◽  
Tatsuki Ohji
Keyword(s):  
Silicon Carbide ◽  
Rare Earth ◽  
Grain Boundary
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